Polarized edge-incident photovoltage spectroscopy and reflectance characterization of a GaAs/GaAlAs vertical-cavity surface-emitting laser structure

J. S. Liang, S. D. Wang, Y. S. Huang, C. W. Tien, Y. M. Chang, C. W. Chen, N. Y. Li, Der-Yuh Lin, Fred H. Pollak

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Polarized edge-incident photovoltage spectroscopy (EPVS) and normal-incident reflectance (NIR) studies are performed at room temperature on a bare as-grown wafer of GaAs/GaAlAs-based vertical-cavity surface-emitting laser (VCSEL) structure, designed for emitting at a wavelength near 850 nm. In addition to the interference features related to the properties of the mirrors stacks, in the NIR spectrum only the Fabry-Pérot cavity mode is clearly visible, while the polarized EPV spectra are used to identify the wavelength of fundamental and higher-order transitions from the quantum wells (QWs) in the active region. By comparing the experimental results with theoretical calculations, we are able to ascertain the Al composition, structure parameters, and material quality of the QWs in the VCSEL active regions. We demonstrate the potential of polarized EPVS for the contactless and nondestructive characterization of VCSELs at room temperature.

Original languageEnglish
Pages (from-to)752-754
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number5
DOIs
Publication statusPublished - 2002 Feb 4

Fingerprint

photovoltages
surface emitting lasers
reflectance
cavities
quantum wells
spectroscopy
room temperature
wavelengths
wafers
mirrors
interference

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Liang, J. S. ; Wang, S. D. ; Huang, Y. S. ; Tien, C. W. ; Chang, Y. M. ; Chen, C. W. ; Li, N. Y. ; Lin, Der-Yuh ; Pollak, Fred H. / Polarized edge-incident photovoltage spectroscopy and reflectance characterization of a GaAs/GaAlAs vertical-cavity surface-emitting laser structure. In: Applied Physics Letters. 2002 ; Vol. 80, No. 5. pp. 752-754.
@article{9bd85e71bec5435684014811e7ec5571,
title = "Polarized edge-incident photovoltage spectroscopy and reflectance characterization of a GaAs/GaAlAs vertical-cavity surface-emitting laser structure",
abstract = "Polarized edge-incident photovoltage spectroscopy (EPVS) and normal-incident reflectance (NIR) studies are performed at room temperature on a bare as-grown wafer of GaAs/GaAlAs-based vertical-cavity surface-emitting laser (VCSEL) structure, designed for emitting at a wavelength near 850 nm. In addition to the interference features related to the properties of the mirrors stacks, in the NIR spectrum only the Fabry-P{\'e}rot cavity mode is clearly visible, while the polarized EPV spectra are used to identify the wavelength of fundamental and higher-order transitions from the quantum wells (QWs) in the active region. By comparing the experimental results with theoretical calculations, we are able to ascertain the Al composition, structure parameters, and material quality of the QWs in the VCSEL active regions. We demonstrate the potential of polarized EPVS for the contactless and nondestructive characterization of VCSELs at room temperature.",
author = "Liang, {J. S.} and Wang, {S. D.} and Huang, {Y. S.} and Tien, {C. W.} and Chang, {Y. M.} and Chen, {C. W.} and Li, {N. Y.} and Der-Yuh Lin and Pollak, {Fred H.}",
year = "2002",
month = "2",
day = "4",
doi = "10.1063/1.1445463",
language = "English",
volume = "80",
pages = "752--754",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "5",

}

Polarized edge-incident photovoltage spectroscopy and reflectance characterization of a GaAs/GaAlAs vertical-cavity surface-emitting laser structure. / Liang, J. S.; Wang, S. D.; Huang, Y. S.; Tien, C. W.; Chang, Y. M.; Chen, C. W.; Li, N. Y.; Lin, Der-Yuh; Pollak, Fred H.

In: Applied Physics Letters, Vol. 80, No. 5, 04.02.2002, p. 752-754.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Polarized edge-incident photovoltage spectroscopy and reflectance characterization of a GaAs/GaAlAs vertical-cavity surface-emitting laser structure

AU - Liang, J. S.

AU - Wang, S. D.

AU - Huang, Y. S.

AU - Tien, C. W.

AU - Chang, Y. M.

AU - Chen, C. W.

AU - Li, N. Y.

AU - Lin, Der-Yuh

AU - Pollak, Fred H.

PY - 2002/2/4

Y1 - 2002/2/4

N2 - Polarized edge-incident photovoltage spectroscopy (EPVS) and normal-incident reflectance (NIR) studies are performed at room temperature on a bare as-grown wafer of GaAs/GaAlAs-based vertical-cavity surface-emitting laser (VCSEL) structure, designed for emitting at a wavelength near 850 nm. In addition to the interference features related to the properties of the mirrors stacks, in the NIR spectrum only the Fabry-Pérot cavity mode is clearly visible, while the polarized EPV spectra are used to identify the wavelength of fundamental and higher-order transitions from the quantum wells (QWs) in the active region. By comparing the experimental results with theoretical calculations, we are able to ascertain the Al composition, structure parameters, and material quality of the QWs in the VCSEL active regions. We demonstrate the potential of polarized EPVS for the contactless and nondestructive characterization of VCSELs at room temperature.

AB - Polarized edge-incident photovoltage spectroscopy (EPVS) and normal-incident reflectance (NIR) studies are performed at room temperature on a bare as-grown wafer of GaAs/GaAlAs-based vertical-cavity surface-emitting laser (VCSEL) structure, designed for emitting at a wavelength near 850 nm. In addition to the interference features related to the properties of the mirrors stacks, in the NIR spectrum only the Fabry-Pérot cavity mode is clearly visible, while the polarized EPV spectra are used to identify the wavelength of fundamental and higher-order transitions from the quantum wells (QWs) in the active region. By comparing the experimental results with theoretical calculations, we are able to ascertain the Al composition, structure parameters, and material quality of the QWs in the VCSEL active regions. We demonstrate the potential of polarized EPVS for the contactless and nondestructive characterization of VCSELs at room temperature.

UR - http://www.scopus.com/inward/record.url?scp=79956045613&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79956045613&partnerID=8YFLogxK

U2 - 10.1063/1.1445463

DO - 10.1063/1.1445463

M3 - Article

AN - SCOPUS:79956045613

VL - 80

SP - 752

EP - 754

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 5

ER -