Polarization-matched quaternary superlattice electron blocking layer in blue InGaN light-emitting diodes

Yen-Kuang Kuo, Fang Ming Chen, Jih-Yuan Chang, Bing Cheng Lin

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The effect of polarization-matched AlInGaN/AlGaN superlattice (SL) electron blocking layer (EBL) on the physical characteristics of blue InGaN light-emitting diodes (LEDs) is investigated numerically. Simulation results show that the optical performance of the LEDs with polarization-matched SL EBL can be markedly improved due to the effectively suppressed polarization effect, enhanced hole injection efficiency, and reduced electron overflow. Comparing to the LEDs with conventional AlGaN EBL, an improvement of 53% in light output power is achieved for the proposed LED structure.

Original languageEnglish
Pages (from-to)221-225
Number of pages5
JournalSuperlattices and Microstructures
Volume93
DOIs
Publication statusPublished - 2016 May 1

Fingerprint

Light emitting diodes
light emitting diodes
Polarization
Electrons
polarization
electrons
injection
output
simulation
aluminum gallium nitride

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

@article{de8eab5aac5b4804851f3c2afcac2abf,
title = "Polarization-matched quaternary superlattice electron blocking layer in blue InGaN light-emitting diodes",
abstract = "The effect of polarization-matched AlInGaN/AlGaN superlattice (SL) electron blocking layer (EBL) on the physical characteristics of blue InGaN light-emitting diodes (LEDs) is investigated numerically. Simulation results show that the optical performance of the LEDs with polarization-matched SL EBL can be markedly improved due to the effectively suppressed polarization effect, enhanced hole injection efficiency, and reduced electron overflow. Comparing to the LEDs with conventional AlGaN EBL, an improvement of 53{\%} in light output power is achieved for the proposed LED structure.",
author = "Yen-Kuang Kuo and Chen, {Fang Ming} and Jih-Yuan Chang and Lin, {Bing Cheng}",
year = "2016",
month = "5",
day = "1",
doi = "10.1016/j.spmi.2015.11.024",
language = "English",
volume = "93",
pages = "221--225",
journal = "Superlattices and Microstructures",
issn = "0749-6036",
publisher = "Academic Press Inc.",

}

Polarization-matched quaternary superlattice electron blocking layer in blue InGaN light-emitting diodes. / Kuo, Yen-Kuang; Chen, Fang Ming; Chang, Jih-Yuan; Lin, Bing Cheng.

In: Superlattices and Microstructures, Vol. 93, 01.05.2016, p. 221-225.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Polarization-matched quaternary superlattice electron blocking layer in blue InGaN light-emitting diodes

AU - Kuo, Yen-Kuang

AU - Chen, Fang Ming

AU - Chang, Jih-Yuan

AU - Lin, Bing Cheng

PY - 2016/5/1

Y1 - 2016/5/1

N2 - The effect of polarization-matched AlInGaN/AlGaN superlattice (SL) electron blocking layer (EBL) on the physical characteristics of blue InGaN light-emitting diodes (LEDs) is investigated numerically. Simulation results show that the optical performance of the LEDs with polarization-matched SL EBL can be markedly improved due to the effectively suppressed polarization effect, enhanced hole injection efficiency, and reduced electron overflow. Comparing to the LEDs with conventional AlGaN EBL, an improvement of 53% in light output power is achieved for the proposed LED structure.

AB - The effect of polarization-matched AlInGaN/AlGaN superlattice (SL) electron blocking layer (EBL) on the physical characteristics of blue InGaN light-emitting diodes (LEDs) is investigated numerically. Simulation results show that the optical performance of the LEDs with polarization-matched SL EBL can be markedly improved due to the effectively suppressed polarization effect, enhanced hole injection efficiency, and reduced electron overflow. Comparing to the LEDs with conventional AlGaN EBL, an improvement of 53% in light output power is achieved for the proposed LED structure.

UR - http://www.scopus.com/inward/record.url?scp=84962773320&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84962773320&partnerID=8YFLogxK

U2 - 10.1016/j.spmi.2015.11.024

DO - 10.1016/j.spmi.2015.11.024

M3 - Article

AN - SCOPUS:84962773320

VL - 93

SP - 221

EP - 225

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

SN - 0749-6036

ER -