Polarization engineering in III-nitride based ultraviolet light-emitting diodes

Yu Rui Lin, Bo Ting Liou, Jih Yuan Chang, Yen Kuang Kuo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

In this study, the polarization effect in III-nitride based ultraviolet (UV) light-emitting diodes (LEDs) has been investigated theoretically. Some specific designs in active region are proposed to reduce the polarization effect and, hence, improve the device performance. Simulation results show that by utilizing properly designed quaternary AlInGaN material in active region, the hole injection efficiency can be enhanced due to the reduction of polarization mismatch between hetero-layers. On the other hand, the electron leakage is suppressed owing to that the effective potential height for electrons is increased. Therefore, the performance of UV LEDs is significantly improved by the polarization engineering in active region.

Original languageEnglish
Title of host publicationPhysics and Simulation of Optoelectronic Devices XXI
DOIs
Publication statusPublished - 2013 May 29
EventPhysics and Simulation of Optoelectronic Devices XXI - San Francisco, CA, United States
Duration: 2013 Feb 42013 Feb 7

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8619
ISSN (Print)0277-786X

Other

OtherPhysics and Simulation of Optoelectronic Devices XXI
CountryUnited States
CitySan Francisco, CA
Period13-02-0413-02-07

Fingerprint

Nitrides
Diode
Ultraviolet
ultraviolet radiation
nitrides
Light emitting diodes
Polarization
light emitting diodes
engineering
Engineering
polarization
Electron
Electrons
Effective Potential
Leakage
Injection
leakage
electrons
injection
Ultraviolet Rays

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Lin, Y. R., Liou, B. T., Chang, J. Y., & Kuo, Y. K. (2013). Polarization engineering in III-nitride based ultraviolet light-emitting diodes. In Physics and Simulation of Optoelectronic Devices XXI [86191V] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8619). https://doi.org/10.1117/12.2003779
Lin, Yu Rui ; Liou, Bo Ting ; Chang, Jih Yuan ; Kuo, Yen Kuang. / Polarization engineering in III-nitride based ultraviolet light-emitting diodes. Physics and Simulation of Optoelectronic Devices XXI. 2013. (Proceedings of SPIE - The International Society for Optical Engineering).
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Lin, YR, Liou, BT, Chang, JY & Kuo, YK 2013, Polarization engineering in III-nitride based ultraviolet light-emitting diodes. in Physics and Simulation of Optoelectronic Devices XXI., 86191V, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8619, Physics and Simulation of Optoelectronic Devices XXI, San Francisco, CA, United States, 13-02-04. https://doi.org/10.1117/12.2003779

Polarization engineering in III-nitride based ultraviolet light-emitting diodes. / Lin, Yu Rui; Liou, Bo Ting; Chang, Jih Yuan; Kuo, Yen Kuang.

Physics and Simulation of Optoelectronic Devices XXI. 2013. 86191V (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8619).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Lin YR, Liou BT, Chang JY, Kuo YK. Polarization engineering in III-nitride based ultraviolet light-emitting diodes. In Physics and Simulation of Optoelectronic Devices XXI. 2013. 86191V. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.2003779