Polarization effect on the photovoltaic characteristics of Al 0.14Ga 0.86N/In 0.21Ga 0.79N superlattice solar cells

Yen Kuang Kuo; Han Wei Lin; Jih Yuan Chang; Yu Han Chen; Yi An Chang

doi:10.1109/LED.2012.2200229

Polarization effect on the photovoltaic characteristics of Al _0.14Ga _0.86N/In _0.21Ga _0.79N superlattice solar cells

Yen Kuang Kuo, Han Wei Lin, Jih Yuan Chang, Yu Han Chen, Yi An Chang

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The influence of spontaneous and strain-induced piezoelectric polarizations on the photovoltaic characteristics of an Al _0.14Ga _0.86N/In _0.21Ga _0.79N superlattice (SL) solar cell is numerically investigated. The simulation results show that, compared with the conventional p-i-n structure, the Al _0.14Ga _0.86N/In _0.21Ga _0.79N SL solar cell has better photovoltaic characteristics and is less sensitive to the effect of internal polarization. Therefore, the use of an SL structure in the III-nitride solar cells is advantageous if both the polarization effect and the crystal quality are of major concern.

Original language	English
Article number	6230603
Pages (from-to)	1159-1161
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	33
Issue number	8
DOIs	https://doi.org/10.1109/LED.2012.2200229
Publication status	Published - 2012 Jul 9

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "Polarization effect on the photovoltaic characteristics of Al 0.14Ga 0.86N/In 0.21Ga 0.79N superlattice solar cells",

abstract = "The influence of spontaneous and strain-induced piezoelectric polarizations on the photovoltaic characteristics of an Al 0.14Ga 0.86N/In 0.21Ga 0.79N superlattice (SL) solar cell is numerically investigated. The simulation results show that, compared with the conventional p-i-n structure, the Al 0.14Ga 0.86N/In 0.21Ga 0.79N SL solar cell has better photovoltaic characteristics and is less sensitive to the effect of internal polarization. Therefore, the use of an SL structure in the III-nitride solar cells is advantageous if both the polarization effect and the crystal quality are of major concern.",

author = "Kuo, {Yen Kuang} and Lin, {Han Wei} and Chang, {Jih Yuan} and Chen, {Yu Han} and Chang, {Yi An}",

year = "2012",

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doi = "10.1109/LED.2012.2200229",

language = "English",

volume = "33",

pages = "1159--1161",

journal = "IEEE Electron Device Letters",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Polarization effect on the photovoltaic characteristics of Al 0.14Ga 0.86N/In 0.21Ga 0.79N superlattice solar cells

AU - Kuo, Yen Kuang

AU - Lin, Han Wei

AU - Chang, Jih Yuan

AU - Chen, Yu Han

AU - Chang, Yi An

PY - 2012/7/9

Y1 - 2012/7/9

N2 - The influence of spontaneous and strain-induced piezoelectric polarizations on the photovoltaic characteristics of an Al 0.14Ga 0.86N/In 0.21Ga 0.79N superlattice (SL) solar cell is numerically investigated. The simulation results show that, compared with the conventional p-i-n structure, the Al 0.14Ga 0.86N/In 0.21Ga 0.79N SL solar cell has better photovoltaic characteristics and is less sensitive to the effect of internal polarization. Therefore, the use of an SL structure in the III-nitride solar cells is advantageous if both the polarization effect and the crystal quality are of major concern.

AB - The influence of spontaneous and strain-induced piezoelectric polarizations on the photovoltaic characteristics of an Al 0.14Ga 0.86N/In 0.21Ga 0.79N superlattice (SL) solar cell is numerically investigated. The simulation results show that, compared with the conventional p-i-n structure, the Al 0.14Ga 0.86N/In 0.21Ga 0.79N SL solar cell has better photovoltaic characteristics and is less sensitive to the effect of internal polarization. Therefore, the use of an SL structure in the III-nitride solar cells is advantageous if both the polarization effect and the crystal quality are of major concern.

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