Abstract
The influence of spontaneous and strain-induced piezoelectric polarizations on the photovoltaic characteristics of an Al 0.14Ga 0.86N/In 0.21Ga 0.79N superlattice (SL) solar cell is numerically investigated. The simulation results show that, compared with the conventional p-i-n structure, the Al 0.14Ga 0.86N/In 0.21Ga 0.79N SL solar cell has better photovoltaic characteristics and is less sensitive to the effect of internal polarization. Therefore, the use of an SL structure in the III-nitride solar cells is advantageous if both the polarization effect and the crystal quality are of major concern.
| Original language | English |
|---|---|
| Article number | 6230603 |
| Pages (from-to) | 1159-1161 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 33 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2012 Jul 9 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
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Polarization effect on the photovoltaic characteristics of Al 0.14Ga 0.86N/In 0.21Ga 0.79N superlattice solar cells. / Kuo, Yen-Kuang; Lin, Han Wei; Chang, Jih-Yuan; Chen, Yu Han; Chang, Yi An.
In: IEEE Electron Device Letters, Vol. 33, No. 8, 6230603, 09.07.2012, p. 1159-1161.Research output: Contribution to journal › Article
TY - JOUR
T1 - Polarization effect on the photovoltaic characteristics of Al 0.14Ga 0.86N/In 0.21Ga 0.79N superlattice solar cells
AU - Kuo, Yen-Kuang
AU - Lin, Han Wei
AU - Chang, Jih-Yuan
AU - Chen, Yu Han
AU - Chang, Yi An
PY - 2012/7/9
Y1 - 2012/7/9
N2 - The influence of spontaneous and strain-induced piezoelectric polarizations on the photovoltaic characteristics of an Al 0.14Ga 0.86N/In 0.21Ga 0.79N superlattice (SL) solar cell is numerically investigated. The simulation results show that, compared with the conventional p-i-n structure, the Al 0.14Ga 0.86N/In 0.21Ga 0.79N SL solar cell has better photovoltaic characteristics and is less sensitive to the effect of internal polarization. Therefore, the use of an SL structure in the III-nitride solar cells is advantageous if both the polarization effect and the crystal quality are of major concern.
AB - The influence of spontaneous and strain-induced piezoelectric polarizations on the photovoltaic characteristics of an Al 0.14Ga 0.86N/In 0.21Ga 0.79N superlattice (SL) solar cell is numerically investigated. The simulation results show that, compared with the conventional p-i-n structure, the Al 0.14Ga 0.86N/In 0.21Ga 0.79N SL solar cell has better photovoltaic characteristics and is less sensitive to the effect of internal polarization. Therefore, the use of an SL structure in the III-nitride solar cells is advantageous if both the polarization effect and the crystal quality are of major concern.
UR - http://www.scopus.com/inward/record.url?scp=84864488553&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84864488553&partnerID=8YFLogxK
U2 - 10.1109/LED.2012.2200229
DO - 10.1109/LED.2012.2200229
M3 - Article
AN - SCOPUS:84864488553
VL - 33
SP - 1159
EP - 1161
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 8
M1 - 6230603
ER -