Abstract
The influence of spontaneous and strain-induced piezoelectric polarizations on the photovoltaic characteristics of an Al 0.14Ga 0.86N/In 0.21Ga 0.79N superlattice (SL) solar cell is numerically investigated. The simulation results show that, compared with the conventional p-i-n structure, the Al 0.14Ga 0.86N/In 0.21Ga 0.79N SL solar cell has better photovoltaic characteristics and is less sensitive to the effect of internal polarization. Therefore, the use of an SL structure in the III-nitride solar cells is advantageous if both the polarization effect and the crystal quality are of major concern.
| Original language | English |
|---|---|
| Article number | 6230603 |
| Pages (from-to) | 1159-1161 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 33 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2012 Jul 9 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
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Kuo, Y. K., Lin, H. W., Chang, J. Y., Chen, Y. H., & Chang, Y. A. (2012). Polarization effect on the photovoltaic characteristics of Al 0.14Ga 0.86N/In 0.21Ga 0.79N superlattice solar cells. IEEE Electron Device Letters, 33(8), 1159-1161. [6230603]. https://doi.org/10.1109/LED.2012.2200229