Polarization effect on the photovoltaic characteristics of Al 0.14Ga 0.86N/In 0.21Ga 0.79N superlattice solar cells

Yen-Kuang Kuo, Han Wei Lin, Jih-Yuan Chang, Yu Han Chen, Yi An Chang

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The influence of spontaneous and strain-induced piezoelectric polarizations on the photovoltaic characteristics of an Al 0.14Ga 0.86N/In 0.21Ga 0.79N superlattice (SL) solar cell is numerically investigated. The simulation results show that, compared with the conventional p-i-n structure, the Al 0.14Ga 0.86N/In 0.21Ga 0.79N SL solar cell has better photovoltaic characteristics and is less sensitive to the effect of internal polarization. Therefore, the use of an SL structure in the III-nitride solar cells is advantageous if both the polarization effect and the crystal quality are of major concern.

Original languageEnglish
Article number6230603
Pages (from-to)1159-1161
Number of pages3
JournalIEEE Electron Device Letters
Volume33
Issue number8
DOIs
Publication statusPublished - 2012 Jul 9

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Solar cells
Polarization
Nitrides
Crystals

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

@article{ceb93801aadc4e2eaec941d4dbb941e9,
title = "Polarization effect on the photovoltaic characteristics of Al 0.14Ga 0.86N/In 0.21Ga 0.79N superlattice solar cells",
abstract = "The influence of spontaneous and strain-induced piezoelectric polarizations on the photovoltaic characteristics of an Al 0.14Ga 0.86N/In 0.21Ga 0.79N superlattice (SL) solar cell is numerically investigated. The simulation results show that, compared with the conventional p-i-n structure, the Al 0.14Ga 0.86N/In 0.21Ga 0.79N SL solar cell has better photovoltaic characteristics and is less sensitive to the effect of internal polarization. Therefore, the use of an SL structure in the III-nitride solar cells is advantageous if both the polarization effect and the crystal quality are of major concern.",
author = "Yen-Kuang Kuo and Lin, {Han Wei} and Jih-Yuan Chang and Chen, {Yu Han} and Chang, {Yi An}",
year = "2012",
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pages = "1159--1161",
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Polarization effect on the photovoltaic characteristics of Al 0.14Ga 0.86N/In 0.21Ga 0.79N superlattice solar cells. / Kuo, Yen-Kuang; Lin, Han Wei; Chang, Jih-Yuan; Chen, Yu Han; Chang, Yi An.

In: IEEE Electron Device Letters, Vol. 33, No. 8, 6230603, 09.07.2012, p. 1159-1161.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Polarization effect on the photovoltaic characteristics of Al 0.14Ga 0.86N/In 0.21Ga 0.79N superlattice solar cells

AU - Kuo, Yen-Kuang

AU - Lin, Han Wei

AU - Chang, Jih-Yuan

AU - Chen, Yu Han

AU - Chang, Yi An

PY - 2012/7/9

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N2 - The influence of spontaneous and strain-induced piezoelectric polarizations on the photovoltaic characteristics of an Al 0.14Ga 0.86N/In 0.21Ga 0.79N superlattice (SL) solar cell is numerically investigated. The simulation results show that, compared with the conventional p-i-n structure, the Al 0.14Ga 0.86N/In 0.21Ga 0.79N SL solar cell has better photovoltaic characteristics and is less sensitive to the effect of internal polarization. Therefore, the use of an SL structure in the III-nitride solar cells is advantageous if both the polarization effect and the crystal quality are of major concern.

AB - The influence of spontaneous and strain-induced piezoelectric polarizations on the photovoltaic characteristics of an Al 0.14Ga 0.86N/In 0.21Ga 0.79N superlattice (SL) solar cell is numerically investigated. The simulation results show that, compared with the conventional p-i-n structure, the Al 0.14Ga 0.86N/In 0.21Ga 0.79N SL solar cell has better photovoltaic characteristics and is less sensitive to the effect of internal polarization. Therefore, the use of an SL structure in the III-nitride solar cells is advantageous if both the polarization effect and the crystal quality are of major concern.

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