Abstract
The polarization-dependent optical characteristics of violet InGaN laser diodes, such as band diagrams, emission wavelength, and threshold current, under different operation temperatures have been investigated numerically. Specifically, the normal and reversed polarizations are presented when the laser diodes with wurtzite structure are grown along Ga-face and N-face orientations, respectively. The simulation results show that the lowest threshold current is obtained for the double-quantum-well laser diode with normal polarization, while it is obtained for the single-quantum-well laser diode with reversed polarization. The main physical explanation for the phenomenon is due to effectively reduced electron leakage current, increased hole current density, and reduced Shockley-Read-Hall recombination rate within the active region as the idea of reversed polarization is considered.
| Original language | English |
|---|---|
| Article number | 103115 |
| Journal | Journal of Applied Physics |
| Volume | 103 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 2008 Jun 9 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
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Polarization-dependent optical characteristics of violet InGaN laser diodes. / Yen, Sheng Horng; Kuo, Yen Kuang.
In: Journal of Applied Physics, Vol. 103, No. 10, 103115, 09.06.2008.Research output: Contribution to journal › Article
TY - JOUR
T1 - Polarization-dependent optical characteristics of violet InGaN laser diodes
AU - Yen, Sheng Horng
AU - Kuo, Yen Kuang
PY - 2008/6/9
Y1 - 2008/6/9
N2 - The polarization-dependent optical characteristics of violet InGaN laser diodes, such as band diagrams, emission wavelength, and threshold current, under different operation temperatures have been investigated numerically. Specifically, the normal and reversed polarizations are presented when the laser diodes with wurtzite structure are grown along Ga-face and N-face orientations, respectively. The simulation results show that the lowest threshold current is obtained for the double-quantum-well laser diode with normal polarization, while it is obtained for the single-quantum-well laser diode with reversed polarization. The main physical explanation for the phenomenon is due to effectively reduced electron leakage current, increased hole current density, and reduced Shockley-Read-Hall recombination rate within the active region as the idea of reversed polarization is considered.
AB - The polarization-dependent optical characteristics of violet InGaN laser diodes, such as band diagrams, emission wavelength, and threshold current, under different operation temperatures have been investigated numerically. Specifically, the normal and reversed polarizations are presented when the laser diodes with wurtzite structure are grown along Ga-face and N-face orientations, respectively. The simulation results show that the lowest threshold current is obtained for the double-quantum-well laser diode with normal polarization, while it is obtained for the single-quantum-well laser diode with reversed polarization. The main physical explanation for the phenomenon is due to effectively reduced electron leakage current, increased hole current density, and reduced Shockley-Read-Hall recombination rate within the active region as the idea of reversed polarization is considered.
UR - http://www.scopus.com/inward/record.url?scp=44649089362&partnerID=8YFLogxK
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U2 - 10.1063/1.2937247
DO - 10.1063/1.2937247
M3 - Article
AN - SCOPUS:44649089362
VL - 103
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 10
M1 - 103115
ER -