Abstract
The magnetic properties of the undoped CuAlO2 thin films with different compositions are examined. In order to understand this phenomenon and to determine the correlation between the magnetic and electrical properties and point defects, the X-ray photoelectron spectroscopy and Hall effect measurements are performed. Combining with Hall effect, X-ray photoelectron spectroscopy and alternating gradient magnetometer measurements, a direct link between the hole concentration, magnetism, copper vacancy (VCu), oxygen vacancy, and interstitial oxygen (Oi) is established. It is shown that an increase in the number of acceptors (VCu and Oi) leads to an increase in the hole concentration. Based on theoretical and experimental investigations, the authors confirmed that both acceptors (VCu and Oi) in CuAlO2 could induce the ferromagnetic behavior at room temperature.
| Original language | English |
|---|---|
| Article number | 163 |
| Journal | Applied Physics A: Materials Science and Processing |
| Volume | 122 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2016 Mar 1 |
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All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Materials Science(all)
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Point defect-induced magnetic properties in CuAlO2 films without magnetic impurities. / Luo, Jie; Lin, Yow Jon.
In: Applied Physics A: Materials Science and Processing, Vol. 122, No. 3, 163, 01.03.2016.Research output: Contribution to journal › Article
TY - JOUR
T1 - Point defect-induced magnetic properties in CuAlO2 films without magnetic impurities
AU - Luo, Jie
AU - Lin, Yow Jon
PY - 2016/3/1
Y1 - 2016/3/1
N2 - The magnetic properties of the undoped CuAlO2 thin films with different compositions are examined. In order to understand this phenomenon and to determine the correlation between the magnetic and electrical properties and point defects, the X-ray photoelectron spectroscopy and Hall effect measurements are performed. Combining with Hall effect, X-ray photoelectron spectroscopy and alternating gradient magnetometer measurements, a direct link between the hole concentration, magnetism, copper vacancy (VCu), oxygen vacancy, and interstitial oxygen (Oi) is established. It is shown that an increase in the number of acceptors (VCu and Oi) leads to an increase in the hole concentration. Based on theoretical and experimental investigations, the authors confirmed that both acceptors (VCu and Oi) in CuAlO2 could induce the ferromagnetic behavior at room temperature.
AB - The magnetic properties of the undoped CuAlO2 thin films with different compositions are examined. In order to understand this phenomenon and to determine the correlation between the magnetic and electrical properties and point defects, the X-ray photoelectron spectroscopy and Hall effect measurements are performed. Combining with Hall effect, X-ray photoelectron spectroscopy and alternating gradient magnetometer measurements, a direct link between the hole concentration, magnetism, copper vacancy (VCu), oxygen vacancy, and interstitial oxygen (Oi) is established. It is shown that an increase in the number of acceptors (VCu and Oi) leads to an increase in the hole concentration. Based on theoretical and experimental investigations, the authors confirmed that both acceptors (VCu and Oi) in CuAlO2 could induce the ferromagnetic behavior at room temperature.
UR - http://www.scopus.com/inward/record.url?scp=84959535467&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84959535467&partnerID=8YFLogxK
U2 - 10.1007/s00339-016-9727-1
DO - 10.1007/s00339-016-9727-1
M3 - Article
AN - SCOPUS:84959535467
VL - 122
JO - Applied Physics A: Materials Science and Processing
JF - Applied Physics A: Materials Science and Processing
SN - 0947-8396
IS - 3
M1 - 163
ER -