TY - JOUR
T1 - Planarization, Fabrication, and Characterization of Three-Dimensional Magnetic Field Sensors
AU - Luong, Van Su
AU - Su, Yu Hsin
AU - Lu, Chih Cheng
AU - Jeng, Jen Tzong
AU - Hsu, Jen Hwa
AU - Liao, Ming Han
AU - Wu, Jong Ching
AU - Lai, Meng Huang
AU - Chang, Ching Ray
N1 - Funding Information:
Manuscript received August 10, 2016; revised October 27, 2016 and December 23, 2016; accepted January 24, 2017. Date of publication January 26, 2017; date of current version January 8, 2018. This work was supported by the Ministry of Economic Affairs of Taiwan under Grant 103-EC-17-A-01-S1-219 and by the Ministry of Science and Technology of Taiwan under Grants NSC102-2221-E-151-048-MY2, MOST104-2221-E-151-011, and MOST103-2221-E-027-017. The review of this paper was arranged by Associate Editor Fabrizio Lombardi.
PY - 2018/1
Y1 - 2018/1
N2 - Nanomagnetism deals with magnetic phenomena in nanoscale structures, involving processes at the atomic level. Magnetic sensors, which exhibit the surprising giant magnetoresistance (GMR) effect, are some of the first real applications of nanotechnology, and have become very important in the last two decades. In addition, high-performance magnetoresistance (MR) measurement is a critical technique in modern electrical applications, including electronic compasses, aviation navigation, motion tracking, noncontact current sensing, rotation sensing, and vehicle detection. Both GMR and tunneling magnetoresistance (TMR) sensors have been used in the state-of-art electronic compasses. A new planar design layout of a vector magnetometer is proposed in this report. It can sense variations in three-dimensional (3-D) magnetic fields. The planarization of a vector magnetometer is carried out with consideration of materials, magnetic schematics, as well as transducer circuit designs. The optimization of an advanced magnetic material for use in GMR and TMR sensors and its planarization in a 3-D design are crucial practical issues. This paper presents an overview of the planarization of vector magnetometers and the development of its applications. It focuses on recent works, covers an analytic model of magnetoresistive sensors, and methods of thin film fabrication. It also addresses the planar vector magnetometer with a flux-guide, the chopping technique, and techniques for microfabrication of substrates. Planarization in magnetic sensors will become increasingly exploited as nanomagnetism grows in importance.
AB - Nanomagnetism deals with magnetic phenomena in nanoscale structures, involving processes at the atomic level. Magnetic sensors, which exhibit the surprising giant magnetoresistance (GMR) effect, are some of the first real applications of nanotechnology, and have become very important in the last two decades. In addition, high-performance magnetoresistance (MR) measurement is a critical technique in modern electrical applications, including electronic compasses, aviation navigation, motion tracking, noncontact current sensing, rotation sensing, and vehicle detection. Both GMR and tunneling magnetoresistance (TMR) sensors have been used in the state-of-art electronic compasses. A new planar design layout of a vector magnetometer is proposed in this report. It can sense variations in three-dimensional (3-D) magnetic fields. The planarization of a vector magnetometer is carried out with consideration of materials, magnetic schematics, as well as transducer circuit designs. The optimization of an advanced magnetic material for use in GMR and TMR sensors and its planarization in a 3-D design are crucial practical issues. This paper presents an overview of the planarization of vector magnetometers and the development of its applications. It focuses on recent works, covers an analytic model of magnetoresistive sensors, and methods of thin film fabrication. It also addresses the planar vector magnetometer with a flux-guide, the chopping technique, and techniques for microfabrication of substrates. Planarization in magnetic sensors will become increasingly exploited as nanomagnetism grows in importance.
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U2 - 10.1109/TNANO.2017.2660062
DO - 10.1109/TNANO.2017.2660062
M3 - Article
AN - SCOPUS:85040738271
VL - 17
SP - 11
EP - 25
JO - IEEE Transactions on Nanotechnology
JF - IEEE Transactions on Nanotechnology
SN - 1536-125X
IS - 1
M1 - 7835300
ER -