PL intensity and life-time enhancements of the n-GaN light-emitting diode during the device fabrication

Shen Li Chen, Chin Chai Chen, Yeong Lin Lai, Wen Jung Chiang, Hung Wei Chen

Research output: Contribution to journalArticle

Abstract

In this study, a thermal annealing process was used for evaluating the recovering effect of the surface bombardment in the plasma etching process. After inductively coupled plasma (ICP) etching, the n-GaN samples were heated and annealed in an N2 ambient, which influenced the electrical and photonic characteristics of the devices under test. Eventually, it showed that the resistance improved after the annealing treatment, particularly at a temperature of 550 °C. Furthermore, photoluminescence (and emission-intensity degradation) measurements yielded the same results for these n-GaN LED samples, which increased to 200% (8%) of that of a nonannealing reference group at this annealing temperature. However, this annealing treatment did not completely repair the luminescence intensity and emission life-time because of the formation of deep-level point defects on the n-GaN sample surface during the fabrication process.

Original languageEnglish
Pages (from-to)20-28
Number of pages9
JournalOpen Materials Science Journal
Volume10
DOIs
Publication statusPublished - 2016 Jul 1

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Light emitting diodes
Annealing
Fabrication
Plasma etching
Inductively coupled plasma
Point defects
Photonics
Luminescence
Photoluminescence
Repair
Degradation
Temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Chen, Shen Li ; Chen, Chin Chai ; Lai, Yeong Lin ; Chiang, Wen Jung ; Chen, Hung Wei. / PL intensity and life-time enhancements of the n-GaN light-emitting diode during the device fabrication. In: Open Materials Science Journal. 2016 ; Vol. 10. pp. 20-28.
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abstract = "In this study, a thermal annealing process was used for evaluating the recovering effect of the surface bombardment in the plasma etching process. After inductively coupled plasma (ICP) etching, the n-GaN samples were heated and annealed in an N2 ambient, which influenced the electrical and photonic characteristics of the devices under test. Eventually, it showed that the resistance improved after the annealing treatment, particularly at a temperature of 550 °C. Furthermore, photoluminescence (and emission-intensity degradation) measurements yielded the same results for these n-GaN LED samples, which increased to 200{\%} (8{\%}) of that of a nonannealing reference group at this annealing temperature. However, this annealing treatment did not completely repair the luminescence intensity and emission life-time because of the formation of deep-level point defects on the n-GaN sample surface during the fabrication process.",
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PL intensity and life-time enhancements of the n-GaN light-emitting diode during the device fabrication. / Chen, Shen Li; Chen, Chin Chai; Lai, Yeong Lin; Chiang, Wen Jung; Chen, Hung Wei.

In: Open Materials Science Journal, Vol. 10, 01.07.2016, p. 20-28.

Research output: Contribution to journalArticle

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