Piezoelectric and thermal effects on optical properties of violet-blue InGaN lasers

Sheng Horng Yen, Bo Ting Liou, Mei Ling Chen, Yen Kuang Kuo

Research output: Contribution to journalConference article

5 Citations (Scopus)

Abstract

The optical properties of the violet-blue InGaN quantum-well lasers with an emission wavelength of 400-480 nm are studied with a LASTIP simulation program. Assuming that the InxGa1-xN/InyGa 1-yN heterostructure has a band-offset ratio of 7/3, our simulation results indicate that the use of an AlGaN blocking layer can help reduce the electronic current overflow, and the non-uniform carrier distribution in the quantum wells plays an important role in the laser performance. If the piezoelectric effect is taken into account, the lowest threshold current of the violet-blue InGaN quantum-well lasers is obtained when the number of InGaN well layers is two if the emission wavelength is shorter than 412 nm, and one if the emission wavelength is longer than 412 nm. At a laser wavelength of 478 nm, the slope efficiency of the InGaN single quantum-well laser is decreased by ∼2.4% and that of the double quantum-well laser is decreased by ∼13.9% when the thermal effect is taken into account.

Original languageEnglish
Article number26
Pages (from-to)156-163
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume5628
DOIs
Publication statusPublished - 2005 Jun 1

Fingerprint

InGaN
Quantum well lasers
Piezoelectricity
Thermal Effects
quantum well lasers
Thermal effects
Optical Properties
Quantum Well
temperature effects
Optical properties
Laser
optical properties
Wavelength
Lasers
wavelengths
lasers
threshold currents
Semiconductor quantum wells
AlGaN
Heterojunctions

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

@article{9499ecc4534748998e35492673f08b5d,
title = "Piezoelectric and thermal effects on optical properties of violet-blue InGaN lasers",
abstract = "The optical properties of the violet-blue InGaN quantum-well lasers with an emission wavelength of 400-480 nm are studied with a LASTIP simulation program. Assuming that the InxGa1-xN/InyGa 1-yN heterostructure has a band-offset ratio of 7/3, our simulation results indicate that the use of an AlGaN blocking layer can help reduce the electronic current overflow, and the non-uniform carrier distribution in the quantum wells plays an important role in the laser performance. If the piezoelectric effect is taken into account, the lowest threshold current of the violet-blue InGaN quantum-well lasers is obtained when the number of InGaN well layers is two if the emission wavelength is shorter than 412 nm, and one if the emission wavelength is longer than 412 nm. At a laser wavelength of 478 nm, the slope efficiency of the InGaN single quantum-well laser is decreased by ∼2.4{\%} and that of the double quantum-well laser is decreased by ∼13.9{\%} when the thermal effect is taken into account.",
author = "Yen, {Sheng Horng} and Liou, {Bo Ting} and Chen, {Mei Ling} and Kuo, {Yen Kuang}",
year = "2005",
month = "6",
day = "1",
doi = "10.1117/12.575319",
language = "English",
volume = "5628",
pages = "156--163",
journal = "Proceedings of SPIE - The International Society for Optical Engineering",
issn = "0277-786X",
publisher = "SPIE",

}

Piezoelectric and thermal effects on optical properties of violet-blue InGaN lasers. / Yen, Sheng Horng; Liou, Bo Ting; Chen, Mei Ling; Kuo, Yen Kuang.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 5628, 26, 01.06.2005, p. 156-163.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Piezoelectric and thermal effects on optical properties of violet-blue InGaN lasers

AU - Yen, Sheng Horng

AU - Liou, Bo Ting

AU - Chen, Mei Ling

AU - Kuo, Yen Kuang

PY - 2005/6/1

Y1 - 2005/6/1

N2 - The optical properties of the violet-blue InGaN quantum-well lasers with an emission wavelength of 400-480 nm are studied with a LASTIP simulation program. Assuming that the InxGa1-xN/InyGa 1-yN heterostructure has a band-offset ratio of 7/3, our simulation results indicate that the use of an AlGaN blocking layer can help reduce the electronic current overflow, and the non-uniform carrier distribution in the quantum wells plays an important role in the laser performance. If the piezoelectric effect is taken into account, the lowest threshold current of the violet-blue InGaN quantum-well lasers is obtained when the number of InGaN well layers is two if the emission wavelength is shorter than 412 nm, and one if the emission wavelength is longer than 412 nm. At a laser wavelength of 478 nm, the slope efficiency of the InGaN single quantum-well laser is decreased by ∼2.4% and that of the double quantum-well laser is decreased by ∼13.9% when the thermal effect is taken into account.

AB - The optical properties of the violet-blue InGaN quantum-well lasers with an emission wavelength of 400-480 nm are studied with a LASTIP simulation program. Assuming that the InxGa1-xN/InyGa 1-yN heterostructure has a band-offset ratio of 7/3, our simulation results indicate that the use of an AlGaN blocking layer can help reduce the electronic current overflow, and the non-uniform carrier distribution in the quantum wells plays an important role in the laser performance. If the piezoelectric effect is taken into account, the lowest threshold current of the violet-blue InGaN quantum-well lasers is obtained when the number of InGaN well layers is two if the emission wavelength is shorter than 412 nm, and one if the emission wavelength is longer than 412 nm. At a laser wavelength of 478 nm, the slope efficiency of the InGaN single quantum-well laser is decreased by ∼2.4% and that of the double quantum-well laser is decreased by ∼13.9% when the thermal effect is taken into account.

UR - http://www.scopus.com/inward/record.url?scp=18944375415&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=18944375415&partnerID=8YFLogxK

U2 - 10.1117/12.575319

DO - 10.1117/12.575319

M3 - Conference article

AN - SCOPUS:18944375415

VL - 5628

SP - 156

EP - 163

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

SN - 0277-786X

M1 - 26

ER -