Photovoltaic properties of n-type SnS contact on the unpolished p-type Si surfaces with and without sulfide treatment

Chung Cheng Huang, Yow-Jon Lin, Chia-Jyi Liu, Yao Wei Yang

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21 Citations (Scopus)


The fabrication and detailed electrical properties of heterojunction diodes based on n-type SnS (n-SnS) and p-type Si (p-Si) were reported. The effect of sulfide treatment of p-Si on the power conversion efficiency (PCE) of the n-SnS/unpolished p-Si solar cell was investigated. The n-SnS/unpolished p-Si device without sulfide treatment showed a rectifying behavior with an ideality factor (η) of 1.6 and high series resistance (Rs). However, the n-SnS/unpolished p-Si diode with sulfide treatment for 40 s showed a good rectifying behavior with η of 1.4 and low Rs. Therefore, the enhanced PCE can be interpreted by the device rectifying performance and interface passivation. In addition, note that a suitable sulfide treatment time is an important issue for producing high-efficiency solar cells.

Original languageEnglish
Pages (from-to)21-24
Number of pages4
JournalMicroelectronic Engineering
Publication statusPublished - 2013 May 27


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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