Photoresponse properties of large area MoS2 metal-semiconductor-metal photodetectors

Tsung Shine Ko, Yu Jen Huang, Der Yuh Lin, Chia Feng Lin, Bo Syun Hong, Hone Zern Chen

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


In this study, a large-area molybdenum disulfide (MoS2) thin film was obtained by low pressure thermal sulfurization. Raman scattering spectrum shows that the peaks at 374 and 403 cm-1 are from the MoS2 thin film. XRD result reveals peaks at 33 and 58.5° indicating MoS2(100) and (110) crystal planes. By using gold (Au), silver (Ag), and aluminum (Al) as contact materials on the MoS2 thin film, photoresponsivity results indicate that Ag is a suitable material for obtaining a high responsivity for a high-performance photodetector (PD). Photocurrent mapping measurements also reveal that Ag contacts have the best carrier transport characteristic with carrier diffusion length of 101μm among these contacts. Furthermore, we investigated metal-semiconductor-metal MoS2 thin film PDs with interdigitated fingers of 300, 400, 500, and 600μm contact widths, which showed that the large contact widths could produce a high photoresponse for PD application owing to low resistance.

Original languageEnglish
Article number04FP12
JournalJapanese Journal of Applied Physics
Issue number4
Publication statusPublished - 2018 Apr

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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