Photoresponse properties of large area MoS2 metal-semiconductor-metal photodetectors

Tsung Shine Ko, Yu Jen Huang, Der Yuh Lin, Chia Feng Lin, Bo Syun Hong, Hone Zern Chen

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

In this study, a large-area molybdenum disulfide (MoS2) thin film was obtained by low pressure thermal sulfurization. Raman scattering spectrum shows that the peaks at 374 and 403 cm-1 are from the MoS2 thin film. XRD result reveals peaks at 33 and 58.5° indicating MoS2(100) and (110) crystal planes. By using gold (Au), silver (Ag), and aluminum (Al) as contact materials on the MoS2 thin film, photoresponsivity results indicate that Ag is a suitable material for obtaining a high responsivity for a high-performance photodetector (PD). Photocurrent mapping measurements also reveal that Ag contacts have the best carrier transport characteristic with carrier diffusion length of 101μm among these contacts. Furthermore, we investigated metal-semiconductor-metal MoS2 thin film PDs with interdigitated fingers of 300, 400, 500, and 600μm contact widths, which showed that the large contact widths could produce a high photoresponse for PD application owing to low resistance.

Original languageEnglish
Article number04FP12
JournalJapanese Journal of Applied Physics
Volume57
Issue number4
DOIs
Publication statusPublished - 2018 Apr

Fingerprint

Photodetectors
photometers
Semiconductor materials
Thin films
thin films
Metals
metals
molybdenum disulfides
Carrier transport
low resistance
diffusion length
Photocurrents
Molybdenum
photocurrents
Raman scattering
electric contacts
Silver
low pressure
Gold
silver

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Ko, Tsung Shine ; Huang, Yu Jen ; Lin, Der Yuh ; Lin, Chia Feng ; Hong, Bo Syun ; Chen, Hone Zern. / Photoresponse properties of large area MoS2 metal-semiconductor-metal photodetectors. In: Japanese Journal of Applied Physics. 2018 ; Vol. 57, No. 4.
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abstract = "In this study, a large-area molybdenum disulfide (MoS2) thin film was obtained by low pressure thermal sulfurization. Raman scattering spectrum shows that the peaks at 374 and 403 cm-1 are from the MoS2 thin film. XRD result reveals peaks at 33 and 58.5° indicating MoS2(100) and (110) crystal planes. By using gold (Au), silver (Ag), and aluminum (Al) as contact materials on the MoS2 thin film, photoresponsivity results indicate that Ag is a suitable material for obtaining a high responsivity for a high-performance photodetector (PD). Photocurrent mapping measurements also reveal that Ag contacts have the best carrier transport characteristic with carrier diffusion length of 101μm among these contacts. Furthermore, we investigated metal-semiconductor-metal MoS2 thin film PDs with interdigitated fingers of 300, 400, 500, and 600μm contact widths, which showed that the large contact widths could produce a high photoresponse for PD application owing to low resistance.",
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Photoresponse properties of large area MoS2 metal-semiconductor-metal photodetectors. / Ko, Tsung Shine; Huang, Yu Jen; Lin, Der Yuh; Lin, Chia Feng; Hong, Bo Syun; Chen, Hone Zern.

In: Japanese Journal of Applied Physics, Vol. 57, No. 4, 04FP12, 04.2018.

Research output: Contribution to journalArticle

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AU - Hong, Bo Syun

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