Abstract
This work investigates photoluminescence (PL) spectra from ZnSe xTe1-x/ZnTe multiple-quantum-well structures grown on GaAs(001) substrates by molecular-beam epitaxy. The PL data reveal that the band alignment of the ZnSexTe1-x/ZnTe system is type II. The thermal activation energy for quenching the PL intensity was determined from the temperature-dependent PL spectra. The activation energy was found to increase initially and then decrease as the thickness of the ZnSexTe 1-x layers decreases from 7 to 3 nm. The temperature-dependent broadening of the PL linewidth was also investigated. The LO-phonon scattering was found to be the dominant broadening mechanism.
| Original language | English |
|---|---|
| Article number | 5 |
| Pages (from-to) | 7267-7271 |
| Number of pages | 5 |
| Journal | Journal of Applied Physics |
| Volume | 96 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 2004 Dec 15 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
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Shih, Y-T., Tsai, Y. L., Yuan, C. T., Chen, C. Y., Yang, C. S., & Chou, W. C. (2004). Photoluminescence of ZnSexTe1-x/ZnTe multiple-quantum-well structures grown by molecular-beam epitaxy. Journal of Applied Physics, 96(12), 7267-7271. [5]. https://doi.org/10.1063/1.1818712