Abstract
This work investigates photoluminescence (PL) spectra from ZnSe xTe1-x/ZnTe multiple-quantum-well structures grown on GaAs(001) substrates by molecular-beam epitaxy. The PL data reveal that the band alignment of the ZnSexTe1-x/ZnTe system is type II. The thermal activation energy for quenching the PL intensity was determined from the temperature-dependent PL spectra. The activation energy was found to increase initially and then decrease as the thickness of the ZnSexTe 1-x layers decreases from 7 to 3 nm. The temperature-dependent broadening of the PL linewidth was also investigated. The LO-phonon scattering was found to be the dominant broadening mechanism.
Original language | English |
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Article number | 5 |
Pages (from-to) | 7267-7271 |
Number of pages | 5 |
Journal | Journal of Applied Physics |
Volume | 96 |
Issue number | 12 |
DOIs | |
Publication status | Published - 2004 Dec 15 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)