Photoluminescence of ZnSexTe1-x/ZnTe multiple-quantum-well structures grown by molecular-beam epitaxy

Yu-Tai Shih, Y. L. Tsai, C. T. Yuan, C. Y. Chen, C. S. Yang, W. C. Chou

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6 Citations (Scopus)


This work investigates photoluminescence (PL) spectra from ZnSe xTe1-x/ZnTe multiple-quantum-well structures grown on GaAs(001) substrates by molecular-beam epitaxy. The PL data reveal that the band alignment of the ZnSexTe1-x/ZnTe system is type II. The thermal activation energy for quenching the PL intensity was determined from the temperature-dependent PL spectra. The activation energy was found to increase initially and then decrease as the thickness of the ZnSexTe 1-x layers decreases from 7 to 3 nm. The temperature-dependent broadening of the PL linewidth was also investigated. The LO-phonon scattering was found to be the dominant broadening mechanism.

Original languageEnglish
Article number5
Pages (from-to)7267-7271
Number of pages5
JournalJournal of Applied Physics
Issue number12
Publication statusPublished - 2004 Dec 15

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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