Photoluminescence of ZnSexTe1-x/ZnTe multiple-quantum-well structures grown by molecular-beam epitaxy

Yu-Tai Shih; Y. L. Tsai; C. T. Yuan; C. Y. Chen; C. S. Yang; W. C. Chou

doi:10.1063/1.1818712

Photoluminescence of ZnSe_xTe_1-x/ZnTe multiple-quantum-well structures grown by molecular-beam epitaxy

Yu-Tai Shih, Y. L. Tsai, C. T. Yuan, C. Y. Chen, C. S. Yang, W. C. Chou

Department of Physics

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

This work investigates photoluminescence (PL) spectra from ZnSe _xTe_1-x/ZnTe multiple-quantum-well structures grown on GaAs(001) substrates by molecular-beam epitaxy. The PL data reveal that the band alignment of the ZnSe_xTe_1-x/ZnTe system is type II. The thermal activation energy for quenching the PL intensity was determined from the temperature-dependent PL spectra. The activation energy was found to increase initially and then decrease as the thickness of the ZnSe_xTe _1-x layers decreases from 7 to 3 nm. The temperature-dependent broadening of the PL linewidth was also investigated. The LO-phonon scattering was found to be the dominant broadening mechanism.

Original language	English
Article number	5
Pages (from-to)	7267-7271
Number of pages	5
Journal	Journal of Applied Physics
Volume	96
Issue number	12
DOIs	https://doi.org/10.1063/1.1818712
Publication status	Published - 2004 Dec 15

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1063/1.1818712

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title = "Photoluminescence of ZnSexTe1-x/ZnTe multiple-quantum-well structures grown by molecular-beam epitaxy",

abstract = "This work investigates photoluminescence (PL) spectra from ZnSe xTe1-x/ZnTe multiple-quantum-well structures grown on GaAs(001) substrates by molecular-beam epitaxy. The PL data reveal that the band alignment of the ZnSexTe1-x/ZnTe system is type II. The thermal activation energy for quenching the PL intensity was determined from the temperature-dependent PL spectra. The activation energy was found to increase initially and then decrease as the thickness of the ZnSexTe 1-x layers decreases from 7 to 3 nm. The temperature-dependent broadening of the PL linewidth was also investigated. The LO-phonon scattering was found to be the dominant broadening mechanism.",

author = "Yu-Tai Shih and Tsai, {Y. L.} and Yuan, {C. T.} and Chen, {C. Y.} and Yang, {C. S.} and Chou, {W. C.}",

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AU - Shih, Yu-Tai

AU - Tsai, Y. L.

AU - Yuan, C. T.

AU - Chen, C. Y.

AU - Yang, C. S.

AU - Chou, W. C.

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AB - This work investigates photoluminescence (PL) spectra from ZnSe xTe1-x/ZnTe multiple-quantum-well structures grown on GaAs(001) substrates by molecular-beam epitaxy. The PL data reveal that the band alignment of the ZnSexTe1-x/ZnTe system is type II. The thermal activation energy for quenching the PL intensity was determined from the temperature-dependent PL spectra. The activation energy was found to increase initially and then decrease as the thickness of the ZnSexTe 1-x layers decreases from 7 to 3 nm. The temperature-dependent broadening of the PL linewidth was also investigated. The LO-phonon scattering was found to be the dominant broadening mechanism.

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