Photoluminescence of plasma enhanced chemical vapor deposition amorphous silicon oxide with silicon nanocrystals grown at different fluence ratios and substrate temperatures

Chun Jung Lin, Chi Kuan Lin, Chih-Wei Chang, Yu Lun Chueh, Hao Chung Kuo, Eric Wei Guang Diau, Li Jen Chou, Gong Ru Lin

Research output: Contribution to journalArticle

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Abstract

Near-infrared photoluminescent dynamics of thermally annealed Si-rich SiOx films grown by plasma enhanced chemical vapor deposition at different substrate temperatures and N2O/SiH4 fluence ratios are studied. The size of nanocrystallite Si (nc-Si) critically depends on the density of oxygen atoms in a Si-rich layer when the N2O/SiH 4 ratio is smaller than 4; that is, it significantly increases at low N2O/SiH4 ratios. Deposition at a high N 2O/SiH4 ratio strongly reduces the density of nc-Si and degrades the luminescence at 700-800 nm since the density of oxygen atoms is sufficient in the reaction of nc-Si with silicon atoms and formation of a stoichiometric SiO2 matrix. Under a high RF power condition, the increasing substrate temperature usually inhibits the precipitation of nc-Si since high-temperature growth facilitates stochiometric SiO2 deposition. The disappearance of visible PL reveals the complete regrowth of a stoichiometric SiO2 matrix around a nanocrystallite Si cluster after annealing. The results of the transient luminescent analysis of Si-rich SiO x samples corroborate well with the observed values and reveal a lifetime of 43 μs under an optimized nc-Si precipitation condition of 1100°C annealing for 3 h.

Original languageEnglish
Pages (from-to)1040-1043
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number2 A
DOIs
Publication statusPublished - 2006 Feb 8

Fingerprint

Silicon oxides
Plasma enhanced chemical vapor deposition
Amorphous silicon
silicon oxides
Nanocrystals
amorphous silicon
Photoluminescence
nanocrystals
fluence
vapor deposition
photoluminescence
Silicon
Atoms
oxygen atoms
silicon
Substrates
Annealing
annealing
Oxygen
Growth temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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title = "Photoluminescence of plasma enhanced chemical vapor deposition amorphous silicon oxide with silicon nanocrystals grown at different fluence ratios and substrate temperatures",
abstract = "Near-infrared photoluminescent dynamics of thermally annealed Si-rich SiOx films grown by plasma enhanced chemical vapor deposition at different substrate temperatures and N2O/SiH4 fluence ratios are studied. The size of nanocrystallite Si (nc-Si) critically depends on the density of oxygen atoms in a Si-rich layer when the N2O/SiH 4 ratio is smaller than 4; that is, it significantly increases at low N2O/SiH4 ratios. Deposition at a high N 2O/SiH4 ratio strongly reduces the density of nc-Si and degrades the luminescence at 700-800 nm since the density of oxygen atoms is sufficient in the reaction of nc-Si with silicon atoms and formation of a stoichiometric SiO2 matrix. Under a high RF power condition, the increasing substrate temperature usually inhibits the precipitation of nc-Si since high-temperature growth facilitates stochiometric SiO2 deposition. The disappearance of visible PL reveals the complete regrowth of a stoichiometric SiO2 matrix around a nanocrystallite Si cluster after annealing. The results of the transient luminescent analysis of Si-rich SiO x samples corroborate well with the observed values and reveal a lifetime of 43 μs under an optimized nc-Si precipitation condition of 1100°C annealing for 3 h.",
author = "Lin, {Chun Jung} and Lin, {Chi Kuan} and Chih-Wei Chang and Chueh, {Yu Lun} and Kuo, {Hao Chung} and Diau, {Eric Wei Guang} and Chou, {Li Jen} and Lin, {Gong Ru}",
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Photoluminescence of plasma enhanced chemical vapor deposition amorphous silicon oxide with silicon nanocrystals grown at different fluence ratios and substrate temperatures. / Lin, Chun Jung; Lin, Chi Kuan; Chang, Chih-Wei; Chueh, Yu Lun; Kuo, Hao Chung; Diau, Eric Wei Guang; Chou, Li Jen; Lin, Gong Ru.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 2 A, 08.02.2006, p. 1040-1043.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Photoluminescence of plasma enhanced chemical vapor deposition amorphous silicon oxide with silicon nanocrystals grown at different fluence ratios and substrate temperatures

AU - Lin, Chun Jung

AU - Lin, Chi Kuan

AU - Chang, Chih-Wei

AU - Chueh, Yu Lun

AU - Kuo, Hao Chung

AU - Diau, Eric Wei Guang

AU - Chou, Li Jen

AU - Lin, Gong Ru

PY - 2006/2/8

Y1 - 2006/2/8

N2 - Near-infrared photoluminescent dynamics of thermally annealed Si-rich SiOx films grown by plasma enhanced chemical vapor deposition at different substrate temperatures and N2O/SiH4 fluence ratios are studied. The size of nanocrystallite Si (nc-Si) critically depends on the density of oxygen atoms in a Si-rich layer when the N2O/SiH 4 ratio is smaller than 4; that is, it significantly increases at low N2O/SiH4 ratios. Deposition at a high N 2O/SiH4 ratio strongly reduces the density of nc-Si and degrades the luminescence at 700-800 nm since the density of oxygen atoms is sufficient in the reaction of nc-Si with silicon atoms and formation of a stoichiometric SiO2 matrix. Under a high RF power condition, the increasing substrate temperature usually inhibits the precipitation of nc-Si since high-temperature growth facilitates stochiometric SiO2 deposition. The disappearance of visible PL reveals the complete regrowth of a stoichiometric SiO2 matrix around a nanocrystallite Si cluster after annealing. The results of the transient luminescent analysis of Si-rich SiO x samples corroborate well with the observed values and reveal a lifetime of 43 μs under an optimized nc-Si precipitation condition of 1100°C annealing for 3 h.

AB - Near-infrared photoluminescent dynamics of thermally annealed Si-rich SiOx films grown by plasma enhanced chemical vapor deposition at different substrate temperatures and N2O/SiH4 fluence ratios are studied. The size of nanocrystallite Si (nc-Si) critically depends on the density of oxygen atoms in a Si-rich layer when the N2O/SiH 4 ratio is smaller than 4; that is, it significantly increases at low N2O/SiH4 ratios. Deposition at a high N 2O/SiH4 ratio strongly reduces the density of nc-Si and degrades the luminescence at 700-800 nm since the density of oxygen atoms is sufficient in the reaction of nc-Si with silicon atoms and formation of a stoichiometric SiO2 matrix. Under a high RF power condition, the increasing substrate temperature usually inhibits the precipitation of nc-Si since high-temperature growth facilitates stochiometric SiO2 deposition. The disappearance of visible PL reveals the complete regrowth of a stoichiometric SiO2 matrix around a nanocrystallite Si cluster after annealing. The results of the transient luminescent analysis of Si-rich SiO x samples corroborate well with the observed values and reveal a lifetime of 43 μs under an optimized nc-Si precipitation condition of 1100°C annealing for 3 h.

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