Abstract
Near-infrared photoluminescent dynamics of thermally annealed Si-rich SiOx films grown by plasma enhanced chemical vapor deposition at different substrate temperatures and N2O/SiH4 fluence ratios are studied. The size of nanocrystallite Si (nc-Si) critically depends on the density of oxygen atoms in a Si-rich layer when the N2O/SiH 4 ratio is smaller than 4; that is, it significantly increases at low N2O/SiH4 ratios. Deposition at a high N 2O/SiH4 ratio strongly reduces the density of nc-Si and degrades the luminescence at 700-800 nm since the density of oxygen atoms is sufficient in the reaction of nc-Si with silicon atoms and formation of a stoichiometric SiO2 matrix. Under a high RF power condition, the increasing substrate temperature usually inhibits the precipitation of nc-Si since high-temperature growth facilitates stochiometric SiO2 deposition. The disappearance of visible PL reveals the complete regrowth of a stoichiometric SiO2 matrix around a nanocrystallite Si cluster after annealing. The results of the transient luminescent analysis of Si-rich SiO x samples corroborate well with the observed values and reveal a lifetime of 43 μs under an optimized nc-Si precipitation condition of 1100°C annealing for 3 h.
| Original language | English |
|---|---|
| Pages (from-to) | 1040-1043 |
| Number of pages | 4 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 45 |
| Issue number | 2 A |
| DOIs | |
| Publication status | Published - 2006 Feb 8 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
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Photoluminescence of plasma enhanced chemical vapor deposition amorphous silicon oxide with silicon nanocrystals grown at different fluence ratios and substrate temperatures. / Lin, Chun Jung; Lin, Chi Kuan; Chang, Chih-Wei; Chueh, Yu Lun; Kuo, Hao Chung; Diau, Eric Wei Guang; Chou, Li Jen; Lin, Gong Ru.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 2 A, 08.02.2006, p. 1040-1043.Research output: Contribution to journal › Article
TY - JOUR
T1 - Photoluminescence of plasma enhanced chemical vapor deposition amorphous silicon oxide with silicon nanocrystals grown at different fluence ratios and substrate temperatures
AU - Lin, Chun Jung
AU - Lin, Chi Kuan
AU - Chang, Chih-Wei
AU - Chueh, Yu Lun
AU - Kuo, Hao Chung
AU - Diau, Eric Wei Guang
AU - Chou, Li Jen
AU - Lin, Gong Ru
PY - 2006/2/8
Y1 - 2006/2/8
N2 - Near-infrared photoluminescent dynamics of thermally annealed Si-rich SiOx films grown by plasma enhanced chemical vapor deposition at different substrate temperatures and N2O/SiH4 fluence ratios are studied. The size of nanocrystallite Si (nc-Si) critically depends on the density of oxygen atoms in a Si-rich layer when the N2O/SiH 4 ratio is smaller than 4; that is, it significantly increases at low N2O/SiH4 ratios. Deposition at a high N 2O/SiH4 ratio strongly reduces the density of nc-Si and degrades the luminescence at 700-800 nm since the density of oxygen atoms is sufficient in the reaction of nc-Si with silicon atoms and formation of a stoichiometric SiO2 matrix. Under a high RF power condition, the increasing substrate temperature usually inhibits the precipitation of nc-Si since high-temperature growth facilitates stochiometric SiO2 deposition. The disappearance of visible PL reveals the complete regrowth of a stoichiometric SiO2 matrix around a nanocrystallite Si cluster after annealing. The results of the transient luminescent analysis of Si-rich SiO x samples corroborate well with the observed values and reveal a lifetime of 43 μs under an optimized nc-Si precipitation condition of 1100°C annealing for 3 h.
AB - Near-infrared photoluminescent dynamics of thermally annealed Si-rich SiOx films grown by plasma enhanced chemical vapor deposition at different substrate temperatures and N2O/SiH4 fluence ratios are studied. The size of nanocrystallite Si (nc-Si) critically depends on the density of oxygen atoms in a Si-rich layer when the N2O/SiH 4 ratio is smaller than 4; that is, it significantly increases at low N2O/SiH4 ratios. Deposition at a high N 2O/SiH4 ratio strongly reduces the density of nc-Si and degrades the luminescence at 700-800 nm since the density of oxygen atoms is sufficient in the reaction of nc-Si with silicon atoms and formation of a stoichiometric SiO2 matrix. Under a high RF power condition, the increasing substrate temperature usually inhibits the precipitation of nc-Si since high-temperature growth facilitates stochiometric SiO2 deposition. The disappearance of visible PL reveals the complete regrowth of a stoichiometric SiO2 matrix around a nanocrystallite Si cluster after annealing. The results of the transient luminescent analysis of Si-rich SiO x samples corroborate well with the observed values and reveal a lifetime of 43 μs under an optimized nc-Si precipitation condition of 1100°C annealing for 3 h.
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U2 - 10.1143/JJAP.45.1040
DO - 10.1143/JJAP.45.1040
M3 - Article
AN - SCOPUS:32244447212
VL - 45
SP - 1040
EP - 1043
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 2 A
ER -