Photoluminescence characterization of type-II Zn0.97Mn 0.03Se/ZnSe0.92Te0.08 multiple-quantum-well structures

Jian Jhin Shiu, Wei-Li Chen, Der-Yuh Lin, Chu Shou Yang, Wu Ching Chou

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The optical characterization of type-II Zn0.97Mn 0.03Se/ZnSe0.92Te0.08 multiple-quantum-well structures has been studied using photoluminescence (PL), temperature-dependent PL, and power-dependent PL. The PL data reveal that the band alignment of the ZnMnSe/ZnSeTe multiple quantum wells (MQWs) is type II. In comparison with the theoretical calculation based on solving the Schrodinger equation of a square potential well, the valence band offset is estimated to be 0.6 eV. From the power-dependent PL spectra, it is observed that the peak position of PL spectra shows a blue shift on increasing the excitation power. The blue shift can be interpreted in terms of the band-bending effect due to spatially separated carriers in a type-II alignment and the band filling effect. The thermal activation energy (EA) for quenching the PL intensity was determined from temperature-dependent PL spectra. The thermal activation energy was found to decrease as the thickness of ZnMnSe or ZnSeTe layers decreased.

Original languageEnglish
Pages (from-to)2481-2485
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number4 B
Publication statusPublished - 2007 Apr 24

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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