Photoluminescence characterization of type-II Zn0.97Mn 0.03Se/ZnSe0.92Te0.08 multiple-quantum-well structures

Jian Jhin Shiu; Wei-Li Chen; Der-Yuh Lin; Chu Shou Yang; Wu Ching Chou

doi:10.1143/JJAP.46.2481

Photoluminescence characterization of type-II Zn_0.97Mn _0.03Se/ZnSe_0.92Te_0.08 multiple-quantum-well structures

Jian Jhin Shiu, Wei-Li Chen, Der-Yuh Lin, Chu Shou Yang, Wu Ching Chou

Department of Electronic Engineering

Research output: Contribution to journal › Article

Abstract

The optical characterization of type-II Zn_0.97Mn _0.03Se/ZnSe_0.92Te_0.08 multiple-quantum-well structures has been studied using photoluminescence (PL), temperature-dependent PL, and power-dependent PL. The PL data reveal that the band alignment of the ZnMnSe/ZnSeTe multiple quantum wells (MQWs) is type II. In comparison with the theoretical calculation based on solving the Schrodinger equation of a square potential well, the valence band offset is estimated to be 0.6 eV. From the power-dependent PL spectra, it is observed that the peak position of PL spectra shows a blue shift on increasing the excitation power. The blue shift can be interpreted in terms of the band-bending effect due to spatially separated carriers in a type-II alignment and the band filling effect. The thermal activation energy (E_A) for quenching the PL intensity was determined from temperature-dependent PL spectra. The thermal activation energy was found to decrease as the thickness of ZnMnSe or ZnSeTe layers decreased.

Original language	English
Pages (from-to)	2481-2485
Number of pages	5
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	46
Issue number	4 B
DOIs	https://doi.org/10.1143/JJAP.46.2481
Publication status	Published - 2007 Apr 24

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All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

Cite this

Shiu, J. J., Chen, W-L., Lin, D-Y., Yang, C. S., & Chou, W. C. (2007). Photoluminescence characterization of type-II Zn_0.97Mn _0.03Se/ZnSe_0.92Te_0.08 multiple-quantum-well structures. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 46(4 B), 2481-2485. https://doi.org/10.1143/JJAP.46.2481

@article{73b7e5137aab43afaf8955a4856c8bcc,

title = "Photoluminescence characterization of type-II Zn0.97Mn 0.03Se/ZnSe0.92Te0.08 multiple-quantum-well structures",

abstract = "The optical characterization of type-II Zn0.97Mn 0.03Se/ZnSe0.92Te0.08 multiple-quantum-well structures has been studied using photoluminescence (PL), temperature-dependent PL, and power-dependent PL. The PL data reveal that the band alignment of the ZnMnSe/ZnSeTe multiple quantum wells (MQWs) is type II. In comparison with the theoretical calculation based on solving the Schrodinger equation of a square potential well, the valence band offset is estimated to be 0.6 eV. From the power-dependent PL spectra, it is observed that the peak position of PL spectra shows a blue shift on increasing the excitation power. The blue shift can be interpreted in terms of the band-bending effect due to spatially separated carriers in a type-II alignment and the band filling effect. The thermal activation energy (EA) for quenching the PL intensity was determined from temperature-dependent PL spectra. The thermal activation energy was found to decrease as the thickness of ZnMnSe or ZnSeTe layers decreased.",

author = "Shiu, {Jian Jhin} and Wei-Li Chen and Der-Yuh Lin and Yang, {Chu Shou} and Chou, {Wu Ching}",

year = "2007",

month = apr

day = "24",

doi = "10.1143/JJAP.46.2481",

language = "English",

volume = "46",

pages = "2481--2485",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "4 B",

}

Photoluminescence characterization of type-II Zn_0.97Mn _0.03Se/ZnSe_0.92Te_0.08 multiple-quantum-well structures. / Shiu, Jian Jhin; Chen, Wei-Li ; Lin, Der-Yuh; Yang, Chu Shou; Chou, Wu Ching.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 46, No. 4 B, 24.04.2007, p. 2481-2485.

Research output: Contribution to journal › Article

TY - JOUR

T1 - Photoluminescence characterization of type-II Zn0.97Mn 0.03Se/ZnSe0.92Te0.08 multiple-quantum-well structures

AU - Shiu, Jian Jhin

AU - Chen, Wei-Li

AU - Lin, Der-Yuh

AU - Yang, Chu Shou

AU - Chou, Wu Ching

PY - 2007/4/24

Y1 - 2007/4/24

N2 - The optical characterization of type-II Zn0.97Mn 0.03Se/ZnSe0.92Te0.08 multiple-quantum-well structures has been studied using photoluminescence (PL), temperature-dependent PL, and power-dependent PL. The PL data reveal that the band alignment of the ZnMnSe/ZnSeTe multiple quantum wells (MQWs) is type II. In comparison with the theoretical calculation based on solving the Schrodinger equation of a square potential well, the valence band offset is estimated to be 0.6 eV. From the power-dependent PL spectra, it is observed that the peak position of PL spectra shows a blue shift on increasing the excitation power. The blue shift can be interpreted in terms of the band-bending effect due to spatially separated carriers in a type-II alignment and the band filling effect. The thermal activation energy (EA) for quenching the PL intensity was determined from temperature-dependent PL spectra. The thermal activation energy was found to decrease as the thickness of ZnMnSe or ZnSeTe layers decreased.

AB - The optical characterization of type-II Zn0.97Mn 0.03Se/ZnSe0.92Te0.08 multiple-quantum-well structures has been studied using photoluminescence (PL), temperature-dependent PL, and power-dependent PL. The PL data reveal that the band alignment of the ZnMnSe/ZnSeTe multiple quantum wells (MQWs) is type II. In comparison with the theoretical calculation based on solving the Schrodinger equation of a square potential well, the valence band offset is estimated to be 0.6 eV. From the power-dependent PL spectra, it is observed that the peak position of PL spectra shows a blue shift on increasing the excitation power. The blue shift can be interpreted in terms of the band-bending effect due to spatially separated carriers in a type-II alignment and the band filling effect. The thermal activation energy (EA) for quenching the PL intensity was determined from temperature-dependent PL spectra. The thermal activation energy was found to decrease as the thickness of ZnMnSe or ZnSeTe layers decreased.

UR - http://www.scopus.com/inward/record.url?scp=34547900348&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34547900348&partnerID=8YFLogxK

U2 - 10.1143/JJAP.46.2481

DO - 10.1143/JJAP.46.2481

M3 - Article

AN - SCOPUS:34547900348

VL - 46

SP - 2481

EP - 2485

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 4 B

ER -

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10.1143/JJAP.46.2481