Photoluminescence and edge-incident wavelength modulation transmittance spectroscopy characterizations of InGaN/GaN multiple-quantum-well structures

Der-Yuh Lin, Wei-Li Chen, W. C. Lin, J. J. Shiu, J. Han

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

A novel edge-incident wavelength modulation transmittance spectroscopy (WMTS) technique combined with conventional photoluminescence (PL) measurements is developed to investigate the optical properties of two InGaN/GaN multiple-quantum-well (MQW) structures in the temperature range between 15 and 300 K. The S-shaped PL shift with temperature and the InGaN A1 (LO) phonon replicas were observed in temperature-dependent PL measurements. It can be explained by the localization of self-organized InN clusters within the InGaN layers. Besides, we for the first time use the edge-incident WMTS technique to eliminate the multireflection interference effect, which in the conventional transmittance or absorption measurements usually causes spectral oscillation to make the optical features difficult to identify. The excitonic transitions and absorption edge of GaN layers have been revealed clearly. Compared to an envelope-function calculation taking into account the quantum confined Stark effect (QCSE), the origins of these spectral features are assigned. The parameters that describe the temperature dependence of the excitonic transition energies are also evaluated.

Original languageEnglish
Pages (from-to)1983-1987
Number of pages5
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume3
DOIs
Publication statusPublished - 2006 Jul 31
Event6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany
Duration: 2005 Aug 282005 Sep 2

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transmittance
quantum wells
photoluminescence
modulation
wavelengths
spectroscopy
Stark effect
replicas
temperature
envelopes
interference
optical properties
temperature dependence
oscillations
causes
shift
energy

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Cite this

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title = "Photoluminescence and edge-incident wavelength modulation transmittance spectroscopy characterizations of InGaN/GaN multiple-quantum-well structures",
abstract = "A novel edge-incident wavelength modulation transmittance spectroscopy (WMTS) technique combined with conventional photoluminescence (PL) measurements is developed to investigate the optical properties of two InGaN/GaN multiple-quantum-well (MQW) structures in the temperature range between 15 and 300 K. The S-shaped PL shift with temperature and the InGaN A1 (LO) phonon replicas were observed in temperature-dependent PL measurements. It can be explained by the localization of self-organized InN clusters within the InGaN layers. Besides, we for the first time use the edge-incident WMTS technique to eliminate the multireflection interference effect, which in the conventional transmittance or absorption measurements usually causes spectral oscillation to make the optical features difficult to identify. The excitonic transitions and absorption edge of GaN layers have been revealed clearly. Compared to an envelope-function calculation taking into account the quantum confined Stark effect (QCSE), the origins of these spectral features are assigned. The parameters that describe the temperature dependence of the excitonic transition energies are also evaluated.",
author = "Der-Yuh Lin and Wei-Li Chen and Lin, {W. C.} and Shiu, {J. J.} and J. Han",
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T1 - Photoluminescence and edge-incident wavelength modulation transmittance spectroscopy characterizations of InGaN/GaN multiple-quantum-well structures

AU - Lin, Der-Yuh

AU - Chen, Wei-Li

AU - Lin, W. C.

AU - Shiu, J. J.

AU - Han, J.

PY - 2006/7/31

Y1 - 2006/7/31

N2 - A novel edge-incident wavelength modulation transmittance spectroscopy (WMTS) technique combined with conventional photoluminescence (PL) measurements is developed to investigate the optical properties of two InGaN/GaN multiple-quantum-well (MQW) structures in the temperature range between 15 and 300 K. The S-shaped PL shift with temperature and the InGaN A1 (LO) phonon replicas were observed in temperature-dependent PL measurements. It can be explained by the localization of self-organized InN clusters within the InGaN layers. Besides, we for the first time use the edge-incident WMTS technique to eliminate the multireflection interference effect, which in the conventional transmittance or absorption measurements usually causes spectral oscillation to make the optical features difficult to identify. The excitonic transitions and absorption edge of GaN layers have been revealed clearly. Compared to an envelope-function calculation taking into account the quantum confined Stark effect (QCSE), the origins of these spectral features are assigned. The parameters that describe the temperature dependence of the excitonic transition energies are also evaluated.

AB - A novel edge-incident wavelength modulation transmittance spectroscopy (WMTS) technique combined with conventional photoluminescence (PL) measurements is developed to investigate the optical properties of two InGaN/GaN multiple-quantum-well (MQW) structures in the temperature range between 15 and 300 K. The S-shaped PL shift with temperature and the InGaN A1 (LO) phonon replicas were observed in temperature-dependent PL measurements. It can be explained by the localization of self-organized InN clusters within the InGaN layers. Besides, we for the first time use the edge-incident WMTS technique to eliminate the multireflection interference effect, which in the conventional transmittance or absorption measurements usually causes spectral oscillation to make the optical features difficult to identify. The excitonic transitions and absorption edge of GaN layers have been revealed clearly. Compared to an envelope-function calculation taking into account the quantum confined Stark effect (QCSE), the origins of these spectral features are assigned. The parameters that describe the temperature dependence of the excitonic transition energies are also evaluated.

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