Photocurrent stability and responsivity in the n-type Si/ZnO-doped conducting polymer photovoltaic device

Yow Jon Lin; Ting Hong Su; Jung Chung Lin; Yu Chao Su

doi:10.1016/j.synthmet.2011.12.029

Photocurrent stability and responsivity in the n-type Si/ZnO-doped conducting polymer photovoltaic device

Yow Jon Lin, Ting Hong Su, Jung Chung Lin, Yu Chao Su

Graduate Institute of Photonics

Research output: Contribution to journal › Article

22 Citations (Scopus)

Abstract

In this study, the effect of the incorporation of ZnO nanoparticles into poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS) on the photovoltaic property and photoresponse in the n-type Si/PEDOT:PSS device was examined. The enhanced responsivity by ZnO doping can be interpreted by the external light injection and the device rectifying performance. The improved photocurrent stability by incorporation of ZnO nanoparticles into PEDOT:PSS can be explained by the reduced charge-trap density in the ZnO-doped PEDOT:PSS film.

Original language	English
Pages (from-to)	406-409
Number of pages	4
Journal	Synthetic Metals
Volume	162
Issue number	3-4
DOIs	https://doi.org/10.1016/j.synthmet.2011.12.029
Publication status	Published - 2012 Mar 1

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All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

Cite this

Lin, Y. J., Su, T. H., Lin, J. C., & Su, Y. C. (2012). Photocurrent stability and responsivity in the n-type Si/ZnO-doped conducting polymer photovoltaic device. Synthetic Metals, 162(3-4), 406-409. https://doi.org/10.1016/j.synthmet.2011.12.029

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10.1016/j.synthmet.2011.12.029