Abstract
In this study, the effect of the incorporation of ZnO nanoparticles into poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS) on the photovoltaic property and photoresponse in the n-type Si/PEDOT:PSS device was examined. The enhanced responsivity by ZnO doping can be interpreted by the external light injection and the device rectifying performance. The improved photocurrent stability by incorporation of ZnO nanoparticles into PEDOT:PSS can be explained by the reduced charge-trap density in the ZnO-doped PEDOT:PSS film.
| Original language | English |
|---|---|
| Pages (from-to) | 406-409 |
| Number of pages | 4 |
| Journal | Synthetic Metals |
| Volume | 162 |
| Issue number | 3-4 |
| DOIs | |
| Publication status | Published - 2012 Mar 1 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
- Metals and Alloys
- Materials Chemistry
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Lin, Y. J., Su, T. H., Lin, J. C., & Su, Y. C. (2012). Photocurrent stability and responsivity in the n-type Si/ZnO-doped conducting polymer photovoltaic device. Synthetic Metals, 162(3-4), 406-409. https://doi.org/10.1016/j.synthmet.2011.12.029