Abstract
The photo-response of a ZnO nanoparticle embedded in a nanopore made on a silicon nitride membrane is investigated. The ZnO nanoparticle is manipulated onto the nanopore and sandwiched between aluminum contact electrodes from both the top and bottom. The asymmetric device structure facilitates currentvoltage rectification that enables photovoltaic capacity. Under illumination, the device shows open-circuit voltage as well as short-circuit current. The fill factor is found to increase at low temperatures and reaches 48.6% at 100K. The nanopore structure and the manipulation technique provide a solid platform for exploring the electrical properties of single nanoparticles.
| Original language | English |
|---|---|
| Article number | 165201 |
| Journal | Nanotechnology |
| Volume | 23 |
| Issue number | 16 |
| DOIs | |
| Publication status | Published - 2012 Apr 27 |
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All Science Journal Classification (ASJC) codes
- Bioengineering
- Chemistry(all)
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
- Electrical and Electronic Engineering
Cite this
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Photo-response of a nanopore device with a single embedded ZnO nanoparticle. / Nguyen, Linh Nam; Lin, Ming Chou; Chen, Horng Shyang; Lan, Yann Wen; Wu, Cen Shawn; Chang-Liao, Kuei Shu; Chen, Chii Dong.
In: Nanotechnology, Vol. 23, No. 16, 165201, 27.04.2012.Research output: Contribution to journal › Article
TY - JOUR
T1 - Photo-response of a nanopore device with a single embedded ZnO nanoparticle
AU - Nguyen, Linh Nam
AU - Lin, Ming Chou
AU - Chen, Horng Shyang
AU - Lan, Yann Wen
AU - Wu, Cen Shawn
AU - Chang-Liao, Kuei Shu
AU - Chen, Chii Dong
PY - 2012/4/27
Y1 - 2012/4/27
N2 - The photo-response of a ZnO nanoparticle embedded in a nanopore made on a silicon nitride membrane is investigated. The ZnO nanoparticle is manipulated onto the nanopore and sandwiched between aluminum contact electrodes from both the top and bottom. The asymmetric device structure facilitates currentvoltage rectification that enables photovoltaic capacity. Under illumination, the device shows open-circuit voltage as well as short-circuit current. The fill factor is found to increase at low temperatures and reaches 48.6% at 100K. The nanopore structure and the manipulation technique provide a solid platform for exploring the electrical properties of single nanoparticles.
AB - The photo-response of a ZnO nanoparticle embedded in a nanopore made on a silicon nitride membrane is investigated. The ZnO nanoparticle is manipulated onto the nanopore and sandwiched between aluminum contact electrodes from both the top and bottom. The asymmetric device structure facilitates currentvoltage rectification that enables photovoltaic capacity. Under illumination, the device shows open-circuit voltage as well as short-circuit current. The fill factor is found to increase at low temperatures and reaches 48.6% at 100K. The nanopore structure and the manipulation technique provide a solid platform for exploring the electrical properties of single nanoparticles.
UR - http://www.scopus.com/inward/record.url?scp=84859328894&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84859328894&partnerID=8YFLogxK
U2 - 10.1088/0957-4484/23/16/165201
DO - 10.1088/0957-4484/23/16/165201
M3 - Article
AN - SCOPUS:84859328894
VL - 23
JO - Nanotechnology
JF - Nanotechnology
SN - 0957-4484
IS - 16
M1 - 165201
ER -