Photo-response of a nanopore device with a single embedded ZnO nanoparticle

Linh Nam Nguyen; Ming Chou Lin; Horng Shyang Chen; Yann Wen Lan; Cen Shawn Wu; Kuei Shu Chang-Liao; Chii Dong Chen

doi:10.1088/0957-4484/23/16/165201

Photo-response of a nanopore device with a single embedded ZnO nanoparticle

Linh Nam Nguyen, Ming Chou Lin, Horng Shyang Chen, Yann Wen Lan, Cen Shawn Wu, Kuei Shu Chang-Liao, Chii Dong Chen

Department of Physics

Research output: Contribution to journal › Article

8 Citations (Scopus)

Abstract

The photo-response of a ZnO nanoparticle embedded in a nanopore made on a silicon nitride membrane is investigated. The ZnO nanoparticle is manipulated onto the nanopore and sandwiched between aluminum contact electrodes from both the top and bottom. The asymmetric device structure facilitates currentvoltage rectification that enables photovoltaic capacity. Under illumination, the device shows open-circuit voltage as well as short-circuit current. The fill factor is found to increase at low temperatures and reaches 48.6% at 100K. The nanopore structure and the manipulation technique provide a solid platform for exploring the electrical properties of single nanoparticles.

Original language	English
Article number	165201
Journal	Nanotechnology
Volume	23
Issue number	16
DOIs	https://doi.org/10.1088/0957-4484/23/16/165201
Publication status	Published - 2012 Apr 27

Fingerprint

All Science Journal Classification (ASJC) codes

Bioengineering
Chemistry(all)
Materials Science(all)
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

Cite this

Nguyen, L. N., Lin, M. C., Chen, H. S., Lan, Y. W., Wu, C. S., Chang-Liao, K. S., & Chen, C. D. (2012). Photo-response of a nanopore device with a single embedded ZnO nanoparticle. Nanotechnology, 23(16), [165201]. https://doi.org/10.1088/0957-4484/23/16/165201

@article{60fa595a2ace4596b9cffd90ed1c92ae,

title = "Photo-response of a nanopore device with a single embedded ZnO nanoparticle",

abstract = "The photo-response of a ZnO nanoparticle embedded in a nanopore made on a silicon nitride membrane is investigated. The ZnO nanoparticle is manipulated onto the nanopore and sandwiched between aluminum contact electrodes from both the top and bottom. The asymmetric device structure facilitates currentvoltage rectification that enables photovoltaic capacity. Under illumination, the device shows open-circuit voltage as well as short-circuit current. The fill factor is found to increase at low temperatures and reaches 48.6% at 100K. The nanopore structure and the manipulation technique provide a solid platform for exploring the electrical properties of single nanoparticles.",

author = "Nguyen, {Linh Nam} and Lin, {Ming Chou} and Chen, {Horng Shyang} and Lan, {Yann Wen} and Wu, {Cen Shawn} and Chang-Liao, {Kuei Shu} and Chen, {Chii Dong}",

year = "2012",

month = apr

day = "27",

doi = "10.1088/0957-4484/23/16/165201",

language = "English",

volume = "23",

journal = "Nanotechnology",

issn = "0957-4484",

publisher = "IOP Publishing Ltd.",

number = "16",

}

TY - JOUR

T1 - Photo-response of a nanopore device with a single embedded ZnO nanoparticle

AU - Nguyen, Linh Nam

AU - Lin, Ming Chou

AU - Chen, Horng Shyang

AU - Lan, Yann Wen

AU - Wu, Cen Shawn

AU - Chang-Liao, Kuei Shu

AU - Chen, Chii Dong

PY - 2012/4/27

Y1 - 2012/4/27

N2 - The photo-response of a ZnO nanoparticle embedded in a nanopore made on a silicon nitride membrane is investigated. The ZnO nanoparticle is manipulated onto the nanopore and sandwiched between aluminum contact electrodes from both the top and bottom. The asymmetric device structure facilitates currentvoltage rectification that enables photovoltaic capacity. Under illumination, the device shows open-circuit voltage as well as short-circuit current. The fill factor is found to increase at low temperatures and reaches 48.6% at 100K. The nanopore structure and the manipulation technique provide a solid platform for exploring the electrical properties of single nanoparticles.

AB - The photo-response of a ZnO nanoparticle embedded in a nanopore made on a silicon nitride membrane is investigated. The ZnO nanoparticle is manipulated onto the nanopore and sandwiched between aluminum contact electrodes from both the top and bottom. The asymmetric device structure facilitates currentvoltage rectification that enables photovoltaic capacity. Under illumination, the device shows open-circuit voltage as well as short-circuit current. The fill factor is found to increase at low temperatures and reaches 48.6% at 100K. The nanopore structure and the manipulation technique provide a solid platform for exploring the electrical properties of single nanoparticles.

UR - http://www.scopus.com/inward/record.url?scp=84859328894&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84859328894&partnerID=8YFLogxK

U2 - 10.1088/0957-4484/23/16/165201

DO - 10.1088/0957-4484/23/16/165201

M3 - Article

AN - SCOPUS:84859328894

VL - 23

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 16

M1 - 165201

ER -

Access to Document

10.1088/0957-4484/23/16/165201