Phase transformation and optical characteristics of porous germanium thin film

Tsung-Shine Ko; J. Shieh; M. C. Yang; T. C. Lu; H. C. Kuo; S. C. Wang

doi:10.1016/j.tsf.2007.06.023

Phase transformation and optical characteristics of porous germanium thin film

Tsung-Shine Ko, J. Shieh, M. C. Yang, T. C. Lu, H. C. Kuo, S. C. Wang

Department of Electronic Engineering

Research output: Contribution to journal › Article

28 Citations (Scopus)

Abstract

In this study, we proposed a method to prepare GeO₂ by treating porous Ge thin film with thermal annealing in O₂ ambient. After annealing, the morphological transformation from porous thin film to an island structure was observed. The crystallization and composition of the porous Ge thin film prepared using different annealing time in O₂ ambient were confirmed by X-ray diffraction, X-ray photoelectron spectroscopy and Raman spectra. Initial Ge composition was gradually oxidized to GeO₂ with increasing annealing time. Comparing the photoluminescence (PL) results between Ge and GeO₂, it was found that the visible photoluminescence originated from the germanium oxide. Photoluminescence measurements obtained at different temperatures exhibited a maximum integrated PL intensity at around 200 K. A possible explanation for this behavior might be the competition between radiative recombination and nonradiative hopping process.

Original language	English
Pages (from-to)	2934-2938
Number of pages	5
Journal	Thin Solid Films
Volume	516
Issue number	10
DOIs	https://doi.org/10.1016/j.tsf.2007.06.023
Publication status	Published - 2008 Mar 31

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All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Cite this

Ko, T-S., Shieh, J., Yang, M. C., Lu, T. C., Kuo, H. C., & Wang, S. C. (2008). Phase transformation and optical characteristics of porous germanium thin film. Thin Solid Films, 516(10), 2934-2938. https://doi.org/10.1016/j.tsf.2007.06.023

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abstract = "In this study, we proposed a method to prepare GeO2 by treating porous Ge thin film with thermal annealing in O2 ambient. After annealing, the morphological transformation from porous thin film to an island structure was observed. The crystallization and composition of the porous Ge thin film prepared using different annealing time in O2 ambient were confirmed by X-ray diffraction, X-ray photoelectron spectroscopy and Raman spectra. Initial Ge composition was gradually oxidized to GeO2 with increasing annealing time. Comparing the photoluminescence (PL) results between Ge and GeO2, it was found that the visible photoluminescence originated from the germanium oxide. Photoluminescence measurements obtained at different temperatures exhibited a maximum integrated PL intensity at around 200 K. A possible explanation for this behavior might be the competition between radiative recombination and nonradiative hopping process.",

author = "Tsung-Shine Ko and J. Shieh and Yang, {M. C.} and Lu, {T. C.} and Kuo, {H. C.} and Wang, {S. C.}",

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AU - Ko, Tsung-Shine

AU - Shieh, J.

AU - Yang, M. C.

AU - Lu, T. C.

AU - Kuo, H. C.

AU - Wang, S. C.

PY - 2008/3/31

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AB - In this study, we proposed a method to prepare GeO2 by treating porous Ge thin film with thermal annealing in O2 ambient. After annealing, the morphological transformation from porous thin film to an island structure was observed. The crystallization and composition of the porous Ge thin film prepared using different annealing time in O2 ambient were confirmed by X-ray diffraction, X-ray photoelectron spectroscopy and Raman spectra. Initial Ge composition was gradually oxidized to GeO2 with increasing annealing time. Comparing the photoluminescence (PL) results between Ge and GeO2, it was found that the visible photoluminescence originated from the germanium oxide. Photoluminescence measurements obtained at different temperatures exhibited a maximum integrated PL intensity at around 200 K. A possible explanation for this behavior might be the competition between radiative recombination and nonradiative hopping process.

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10.1016/j.tsf.2007.06.023