Abstract
In this study, we proposed a method to prepare GeO2 by treating porous Ge thin film with thermal annealing in O2 ambient. After annealing, the morphological transformation from porous thin film to an island structure was observed. The crystallization and composition of the porous Ge thin film prepared using different annealing time in O2 ambient were confirmed by X-ray diffraction, X-ray photoelectron spectroscopy and Raman spectra. Initial Ge composition was gradually oxidized to GeO2 with increasing annealing time. Comparing the photoluminescence (PL) results between Ge and GeO2, it was found that the visible photoluminescence originated from the germanium oxide. Photoluminescence measurements obtained at different temperatures exhibited a maximum integrated PL intensity at around 200 K. A possible explanation for this behavior might be the competition between radiative recombination and nonradiative hopping process.
| Original language | English |
|---|---|
| Pages (from-to) | 2934-2938 |
| Number of pages | 5 |
| Journal | Thin Solid Films |
| Volume | 516 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 2008 Mar 31 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
Cite this
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Phase transformation and optical characteristics of porous germanium thin film. / Ko, Tsung-Shine; Shieh, J.; Yang, M. C.; Lu, T. C.; Kuo, H. C.; Wang, S. C.
In: Thin Solid Films, Vol. 516, No. 10, 31.03.2008, p. 2934-2938.Research output: Contribution to journal › Article
TY - JOUR
T1 - Phase transformation and optical characteristics of porous germanium thin film
AU - Ko, Tsung-Shine
AU - Shieh, J.
AU - Yang, M. C.
AU - Lu, T. C.
AU - Kuo, H. C.
AU - Wang, S. C.
PY - 2008/3/31
Y1 - 2008/3/31
N2 - In this study, we proposed a method to prepare GeO2 by treating porous Ge thin film with thermal annealing in O2 ambient. After annealing, the morphological transformation from porous thin film to an island structure was observed. The crystallization and composition of the porous Ge thin film prepared using different annealing time in O2 ambient were confirmed by X-ray diffraction, X-ray photoelectron spectroscopy and Raman spectra. Initial Ge composition was gradually oxidized to GeO2 with increasing annealing time. Comparing the photoluminescence (PL) results between Ge and GeO2, it was found that the visible photoluminescence originated from the germanium oxide. Photoluminescence measurements obtained at different temperatures exhibited a maximum integrated PL intensity at around 200 K. A possible explanation for this behavior might be the competition between radiative recombination and nonradiative hopping process.
AB - In this study, we proposed a method to prepare GeO2 by treating porous Ge thin film with thermal annealing in O2 ambient. After annealing, the morphological transformation from porous thin film to an island structure was observed. The crystallization and composition of the porous Ge thin film prepared using different annealing time in O2 ambient were confirmed by X-ray diffraction, X-ray photoelectron spectroscopy and Raman spectra. Initial Ge composition was gradually oxidized to GeO2 with increasing annealing time. Comparing the photoluminescence (PL) results between Ge and GeO2, it was found that the visible photoluminescence originated from the germanium oxide. Photoluminescence measurements obtained at different temperatures exhibited a maximum integrated PL intensity at around 200 K. A possible explanation for this behavior might be the competition between radiative recombination and nonradiative hopping process.
UR - http://www.scopus.com/inward/record.url?scp=39649109084&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=39649109084&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2007.06.023
DO - 10.1016/j.tsf.2007.06.023
M3 - Article
AN - SCOPUS:39649109084
VL - 516
SP - 2934
EP - 2938
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 10
ER -