Phase stability, bonding and electrical conduction of amorphous carbon-added Sb films

Chih Chung Chang; Cheng Te Lin; Po Chin Chang; Chien Tu Chao; Jong-Ching Wu; Tri Rung Yew; Tsung Shune Chin

doi:10.1016/j.scriptamat.2011.08.017

Phase stability, bonding and electrical conduction of amorphous carbon-added Sb films

Chih Chung Chang, Cheng Te Lin, Po Chin Chang, Chien Tu Chao, Jong-Ching Wu, Tri Rung Yew, Tsung Shune Chin

Department of Physics

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

A study of the phase stability, chemical bonding and mechanisms of electrical conduction of carbon-added amorphous Sb films was carried out. Addition of carbon, which results in the formation of C-Sb bonds, hinders long-range Sb-Sb ordering. This leads to enhanced thermal stability of amorphous Sb film. The crystallization temperature of Sb-C films with 0, 8 and 13 at.% C are ∼25, 256 and 262 °C, respectively. The electrical conductivity of Sb₉₂C₈ film is p-type, showing an increase of more than 4 orders of magnitude in carrier concentration upon crystallization corresponding to the observed resistance drop.

Original language	English
Pages (from-to)	950-953
Number of pages	4
Journal	Scripta Materialia
Volume	65
Issue number	11
DOIs	https://doi.org/10.1016/j.scriptamat.2011.08.017
Publication status	Published - 2011 Dec 1

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys

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abstract = "A study of the phase stability, chemical bonding and mechanisms of electrical conduction of carbon-added amorphous Sb films was carried out. Addition of carbon, which results in the formation of C-Sb bonds, hinders long-range Sb-Sb ordering. This leads to enhanced thermal stability of amorphous Sb film. The crystallization temperature of Sb-C films with 0, 8 and 13 at.% C are ∼25, 256 and 262 °C, respectively. The electrical conductivity of Sb92C8 film is p-type, showing an increase of more than 4 orders of magnitude in carrier concentration upon crystallization corresponding to the observed resistance drop.",

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AU - Chang, Chih Chung

AU - Lin, Cheng Te

AU - Chang, Po Chin

AU - Chao, Chien Tu

AU - Wu, Jong-Ching

AU - Yew, Tri Rung

AU - Chin, Tsung Shune

PY - 2011/12/1

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