Phase separation phenomenon in MOCVD-grown GaInP epitaxial layers

Yu Li Tsai, Ray Hua Horng, Ming Chun Tseng, Chia hao Kuo, Po Liang Liu, Dong Sing Wuu, Der Yuh Lin

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Abstract

In-rich and Ga-rich GaInP films were intentionally grown on (0 0 1) GaAs substrates by low-pressure MOCVD to investigate the effect of lattice strain on composition. High-resolution X-ray diffraction (HRXRD) measurement showed that a GaInP single layer exhibits a double-diffracted peak phenomenon. Such a double peak represents a composition separation in the grown film, resulting in two absorption cutoff energies in optical absorption analysis. Cross-sectional transmission electron microscopic (TEM) observation confirmed the composition separation in an In-rich GaInP film. Furthermore, the composition separation amount of a Ga-rich GaInP film after substrate removal was found to be ∼0.5%, which reflects the actual effect of lattice strain on composition during growth stage. Crown

Original languageEnglish
Pages (from-to)3220-3224
Number of pages5
JournalJournal of Crystal Growth
Volume311
Issue number11
DOIs
Publication statusPublished - 2009 May 15

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All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Tsai, Y. L., Horng, R. H., Tseng, M. C., Kuo, C. H., Liu, P. L., Wuu, D. S., & Lin, D. Y. (2009). Phase separation phenomenon in MOCVD-grown GaInP epitaxial layers. Journal of Crystal Growth, 311(11), 3220-3224. https://doi.org/10.1016/j.jcrysgro.2009.03.028