Phase separation phenomenon in MOCVD-grown GaInP epitaxial layers

Yu Li Tsai; Ray Hua Horng; Ming Chun Tseng; Chia hao Kuo; Po Liang Liu; Dong Sing Wuu; Der Yuh Lin

doi:10.1016/j.jcrysgro.2009.03.028

Phase separation phenomenon in MOCVD-grown GaInP epitaxial layers

Yu Li Tsai, Ray Hua Horng, Ming Chun Tseng, Chia hao Kuo, Po Liang Liu, Dong Sing Wuu, Der Yuh Lin

Department of Electronic Engineering

Research output: Contribution to journal › Article

8 Citations (Scopus)

Abstract

In-rich and Ga-rich GaInP films were intentionally grown on (0 0 1) GaAs substrates by low-pressure MOCVD to investigate the effect of lattice strain on composition. High-resolution X-ray diffraction (HRXRD) measurement showed that a GaInP single layer exhibits a double-diffracted peak phenomenon. Such a double peak represents a composition separation in the grown film, resulting in two absorption cutoff energies in optical absorption analysis. Cross-sectional transmission electron microscopic (TEM) observation confirmed the composition separation in an In-rich GaInP film. Furthermore, the composition separation amount of a Ga-rich GaInP film after substrate removal was found to be ∼0.5%, which reflects the actual effect of lattice strain on composition during growth stage. Crown

Original language	English
Pages (from-to)	3220-3224
Number of pages	5
Journal	Journal of Crystal Growth
Volume	311
Issue number	11
DOIs	https://doi.org/10.1016/j.jcrysgro.2009.03.028
Publication status	Published - 2009 May 15

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All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Cite this

Tsai, Y. L., Horng, R. H., Tseng, M. C., Kuo, C. H., Liu, P. L., Wuu, D. S., & Lin, D. Y. (2009). Phase separation phenomenon in MOCVD-grown GaInP epitaxial layers. Journal of Crystal Growth, 311(11), 3220-3224. https://doi.org/10.1016/j.jcrysgro.2009.03.028

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title = "Phase separation phenomenon in MOCVD-grown GaInP epitaxial layers",

abstract = "In-rich and Ga-rich GaInP films were intentionally grown on (0 0 1) GaAs substrates by low-pressure MOCVD to investigate the effect of lattice strain on composition. High-resolution X-ray diffraction (HRXRD) measurement showed that a GaInP single layer exhibits a double-diffracted peak phenomenon. Such a double peak represents a composition separation in the grown film, resulting in two absorption cutoff energies in optical absorption analysis. Cross-sectional transmission electron microscopic (TEM) observation confirmed the composition separation in an In-rich GaInP film. Furthermore, the composition separation amount of a Ga-rich GaInP film after substrate removal was found to be ∼0.5{\%}, which reflects the actual effect of lattice strain on composition during growth stage. Crown",

author = "Tsai, {Yu Li} and Horng, {Ray Hua} and Tseng, {Ming Chun} and Kuo, {Chia hao} and Liu, {Po Liang} and Wuu, {Dong Sing} and Lin, {Der Yuh}",

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AU - Tsai, Yu Li

AU - Horng, Ray Hua

AU - Tseng, Ming Chun

AU - Kuo, Chia hao

AU - Liu, Po Liang

AU - Wuu, Dong Sing

AU - Lin, Der Yuh

PY - 2009/5/15

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AB - In-rich and Ga-rich GaInP films were intentionally grown on (0 0 1) GaAs substrates by low-pressure MOCVD to investigate the effect of lattice strain on composition. High-resolution X-ray diffraction (HRXRD) measurement showed that a GaInP single layer exhibits a double-diffracted peak phenomenon. Such a double peak represents a composition separation in the grown film, resulting in two absorption cutoff energies in optical absorption analysis. Cross-sectional transmission electron microscopic (TEM) observation confirmed the composition separation in an In-rich GaInP film. Furthermore, the composition separation amount of a Ga-rich GaInP film after substrate removal was found to be ∼0.5%, which reflects the actual effect of lattice strain on composition during growth stage. Crown

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10.1016/j.jcrysgro.2009.03.028