Abstract
In-rich and Ga-rich GaInP films were intentionally grown on (0 0 1) GaAs substrates by low-pressure MOCVD to investigate the effect of lattice strain on composition. High-resolution X-ray diffraction (HRXRD) measurement showed that a GaInP single layer exhibits a double-diffracted peak phenomenon. Such a double peak represents a composition separation in the grown film, resulting in two absorption cutoff energies in optical absorption analysis. Cross-sectional transmission electron microscopic (TEM) observation confirmed the composition separation in an In-rich GaInP film. Furthermore, the composition separation amount of a Ga-rich GaInP film after substrate removal was found to be ∼0.5%, which reflects the actual effect of lattice strain on composition during growth stage. Crown
| Original language | English |
|---|---|
| Pages (from-to) | 3220-3224 |
| Number of pages | 5 |
| Journal | Journal of Crystal Growth |
| Volume | 311 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 2009 May 15 |
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All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry
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Phase separation phenomenon in MOCVD-grown GaInP epitaxial layers. / Tsai, Yu Li; Horng, Ray Hua; Tseng, Ming Chun; Kuo, Chia hao; Liu, Po Liang; Wuu, Dong Sing; Lin, Der-Yuh.
In: Journal of Crystal Growth, Vol. 311, No. 11, 15.05.2009, p. 3220-3224.Research output: Contribution to journal › Article
TY - JOUR
T1 - Phase separation phenomenon in MOCVD-grown GaInP epitaxial layers
AU - Tsai, Yu Li
AU - Horng, Ray Hua
AU - Tseng, Ming Chun
AU - Kuo, Chia hao
AU - Liu, Po Liang
AU - Wuu, Dong Sing
AU - Lin, Der-Yuh
PY - 2009/5/15
Y1 - 2009/5/15
N2 - In-rich and Ga-rich GaInP films were intentionally grown on (0 0 1) GaAs substrates by low-pressure MOCVD to investigate the effect of lattice strain on composition. High-resolution X-ray diffraction (HRXRD) measurement showed that a GaInP single layer exhibits a double-diffracted peak phenomenon. Such a double peak represents a composition separation in the grown film, resulting in two absorption cutoff energies in optical absorption analysis. Cross-sectional transmission electron microscopic (TEM) observation confirmed the composition separation in an In-rich GaInP film. Furthermore, the composition separation amount of a Ga-rich GaInP film after substrate removal was found to be ∼0.5%, which reflects the actual effect of lattice strain on composition during growth stage. Crown
AB - In-rich and Ga-rich GaInP films were intentionally grown on (0 0 1) GaAs substrates by low-pressure MOCVD to investigate the effect of lattice strain on composition. High-resolution X-ray diffraction (HRXRD) measurement showed that a GaInP single layer exhibits a double-diffracted peak phenomenon. Such a double peak represents a composition separation in the grown film, resulting in two absorption cutoff energies in optical absorption analysis. Cross-sectional transmission electron microscopic (TEM) observation confirmed the composition separation in an In-rich GaInP film. Furthermore, the composition separation amount of a Ga-rich GaInP film after substrate removal was found to be ∼0.5%, which reflects the actual effect of lattice strain on composition during growth stage. Crown
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U2 - 10.1016/j.jcrysgro.2009.03.028
DO - 10.1016/j.jcrysgro.2009.03.028
M3 - Article
AN - SCOPUS:65849210914
VL - 311
SP - 3220
EP - 3224
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 11
ER -