Phase separation phenomenon in MOCVD-grown GaInP epitaxial layers

Yu Li Tsai, Ray Hua Horng, Ming Chun Tseng, Chia hao Kuo, Po Liang Liu, Dong Sing Wuu, Der-Yuh Lin

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

In-rich and Ga-rich GaInP films were intentionally grown on (0 0 1) GaAs substrates by low-pressure MOCVD to investigate the effect of lattice strain on composition. High-resolution X-ray diffraction (HRXRD) measurement showed that a GaInP single layer exhibits a double-diffracted peak phenomenon. Such a double peak represents a composition separation in the grown film, resulting in two absorption cutoff energies in optical absorption analysis. Cross-sectional transmission electron microscopic (TEM) observation confirmed the composition separation in an In-rich GaInP film. Furthermore, the composition separation amount of a Ga-rich GaInP film after substrate removal was found to be ∼0.5%, which reflects the actual effect of lattice strain on composition during growth stage. Crown

Original languageEnglish
Pages (from-to)3220-3224
Number of pages5
JournalJournal of Crystal Growth
Volume311
Issue number11
DOIs
Publication statusPublished - 2009 May 15

Fingerprint

Epitaxial layers
Metallorganic chemical vapor deposition
Phase separation
metalorganic chemical vapor deposition
Chemical analysis
Substrates
Light absorption
optical absorption
cut-off
low pressure
X ray diffraction
Electrons
high resolution
diffraction
electrons
x rays
energy

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Tsai, Y. L., Horng, R. H., Tseng, M. C., Kuo, C. H., Liu, P. L., Wuu, D. S., & Lin, D-Y. (2009). Phase separation phenomenon in MOCVD-grown GaInP epitaxial layers. Journal of Crystal Growth, 311(11), 3220-3224. https://doi.org/10.1016/j.jcrysgro.2009.03.028
Tsai, Yu Li ; Horng, Ray Hua ; Tseng, Ming Chun ; Kuo, Chia hao ; Liu, Po Liang ; Wuu, Dong Sing ; Lin, Der-Yuh. / Phase separation phenomenon in MOCVD-grown GaInP epitaxial layers. In: Journal of Crystal Growth. 2009 ; Vol. 311, No. 11. pp. 3220-3224.
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Tsai, YL, Horng, RH, Tseng, MC, Kuo, CH, Liu, PL, Wuu, DS & Lin, D-Y 2009, 'Phase separation phenomenon in MOCVD-grown GaInP epitaxial layers', Journal of Crystal Growth, vol. 311, no. 11, pp. 3220-3224. https://doi.org/10.1016/j.jcrysgro.2009.03.028

Phase separation phenomenon in MOCVD-grown GaInP epitaxial layers. / Tsai, Yu Li; Horng, Ray Hua; Tseng, Ming Chun; Kuo, Chia hao; Liu, Po Liang; Wuu, Dong Sing; Lin, Der-Yuh.

In: Journal of Crystal Growth, Vol. 311, No. 11, 15.05.2009, p. 3220-3224.

Research output: Contribution to journalArticle

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AU - Tsai, Yu Li

AU - Horng, Ray Hua

AU - Tseng, Ming Chun

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AU - Liu, Po Liang

AU - Wuu, Dong Sing

AU - Lin, Der-Yuh

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AB - In-rich and Ga-rich GaInP films were intentionally grown on (0 0 1) GaAs substrates by low-pressure MOCVD to investigate the effect of lattice strain on composition. High-resolution X-ray diffraction (HRXRD) measurement showed that a GaInP single layer exhibits a double-diffracted peak phenomenon. Such a double peak represents a composition separation in the grown film, resulting in two absorption cutoff energies in optical absorption analysis. Cross-sectional transmission electron microscopic (TEM) observation confirmed the composition separation in an In-rich GaInP film. Furthermore, the composition separation amount of a Ga-rich GaInP film after substrate removal was found to be ∼0.5%, which reflects the actual effect of lattice strain on composition during growth stage. Crown

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Tsai YL, Horng RH, Tseng MC, Kuo CH, Liu PL, Wuu DS et al. Phase separation phenomenon in MOCVD-grown GaInP epitaxial layers. Journal of Crystal Growth. 2009 May 15;311(11):3220-3224. https://doi.org/10.1016/j.jcrysgro.2009.03.028