Perpendicular magnetic tunneling junction with double barrier layers for MRAM application

A. Canizo Cabrera, Che Hao Chang, Chih Cheng Hsu, Ming Chi Weng, C. C. Chen, C. T. Chao, Jong-Ching Wu, Yang Hua Chang, Te Ho Wu

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

A double-barrier-layer perpendicular magnetic tunneling junction (DpMTJ) structure consisting of Si substrate/Pt/GdFeCo/AlOx/GdFeCo/FeCo/AlOx/FeCo/ TbFeCo/Pt/Ti-cap was prepared by a direct current (dc) and radio frequency (RF) magnetron sputtering method. An elliptical DpMTJ element with 3.5 μm × 2.5 μm size was fabricated using a top-down technique. A conducting atomic force microscope (CAFM) was used to obtain I-V curves of DpMTJ structures. We obtained the magnetoresistance (MR) ratio value from measured I-V curves by applying two opposite magnetic fields value of ±200 Oe perpendicular to the plane of film. The MR ratio was reached as high as 74% at zero applied bias voltage. Furthermore, the MR ratio decreased as bias voltage increased. It could make the DpMTJ structure to be used in the high-density MRAM devices.

Original languageEnglish
Pages (from-to)914-916
Number of pages3
JournalIEEE Transactions on Magnetics
Volume43
Issue number2
DOIs
Publication statusPublished - 2007 Feb 1

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Magnetoresistance
Bias voltage
MRAM devices
Magnetron sputtering
Microscopes
Magnetic fields
Substrates

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Cabrera, A. C., Chang, C. H., Hsu, C. C., Weng, M. C., Chen, C. C., Chao, C. T., ... Wu, T. H. (2007). Perpendicular magnetic tunneling junction with double barrier layers for MRAM application. IEEE Transactions on Magnetics, 43(2), 914-916. https://doi.org/10.1109/TMAG.2006.888503
Cabrera, A. Canizo ; Chang, Che Hao ; Hsu, Chih Cheng ; Weng, Ming Chi ; Chen, C. C. ; Chao, C. T. ; Wu, Jong-Ching ; Chang, Yang Hua ; Wu, Te Ho. / Perpendicular magnetic tunneling junction with double barrier layers for MRAM application. In: IEEE Transactions on Magnetics. 2007 ; Vol. 43, No. 2. pp. 914-916.
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Cabrera, AC, Chang, CH, Hsu, CC, Weng, MC, Chen, CC, Chao, CT, Wu, J-C, Chang, YH & Wu, TH 2007, 'Perpendicular magnetic tunneling junction with double barrier layers for MRAM application', IEEE Transactions on Magnetics, vol. 43, no. 2, pp. 914-916. https://doi.org/10.1109/TMAG.2006.888503

Perpendicular magnetic tunneling junction with double barrier layers for MRAM application. / Cabrera, A. Canizo; Chang, Che Hao; Hsu, Chih Cheng; Weng, Ming Chi; Chen, C. C.; Chao, C. T.; Wu, Jong-Ching; Chang, Yang Hua; Wu, Te Ho.

In: IEEE Transactions on Magnetics, Vol. 43, No. 2, 01.02.2007, p. 914-916.

Research output: Contribution to journalArticle

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AU - Cabrera, A. Canizo

AU - Chang, Che Hao

AU - Hsu, Chih Cheng

AU - Weng, Ming Chi

AU - Chen, C. C.

AU - Chao, C. T.

AU - Wu, Jong-Ching

AU - Chang, Yang Hua

AU - Wu, Te Ho

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N2 - A double-barrier-layer perpendicular magnetic tunneling junction (DpMTJ) structure consisting of Si substrate/Pt/GdFeCo/AlOx/GdFeCo/FeCo/AlOx/FeCo/ TbFeCo/Pt/Ti-cap was prepared by a direct current (dc) and radio frequency (RF) magnetron sputtering method. An elliptical DpMTJ element with 3.5 μm × 2.5 μm size was fabricated using a top-down technique. A conducting atomic force microscope (CAFM) was used to obtain I-V curves of DpMTJ structures. We obtained the magnetoresistance (MR) ratio value from measured I-V curves by applying two opposite magnetic fields value of ±200 Oe perpendicular to the plane of film. The MR ratio was reached as high as 74% at zero applied bias voltage. Furthermore, the MR ratio decreased as bias voltage increased. It could make the DpMTJ structure to be used in the high-density MRAM devices.

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