Perpendicular magnetic tunneling junction with double barrier layers for MRAM application

A. Canizo Cabrera, Che Hao Chang, Chih Cheng Hsu, Ming Chi Weng, C. C. Chen, C. T. Chao, J. C. Wu, Yang Hua Chang, Te Ho Wu

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)


A double-barrier-layer perpendicular magnetic tunneling junction (DpMTJ) structure consisting of Si substrate/Pt/GdFeCo/AlOx/GdFeCo/FeCo/AlOx/FeCo/ TbFeCo/Pt/Ti-cap was prepared by a direct current (dc) and radio frequency (RF) magnetron sputtering method. An elliptical DpMTJ element with 3.5 μm × 2.5 μm size was fabricated using a top-down technique. A conducting atomic force microscope (CAFM) was used to obtain I-V curves of DpMTJ structures. We obtained the magnetoresistance (MR) ratio value from measured I-V curves by applying two opposite magnetic fields value of ±200 Oe perpendicular to the plane of film. The MR ratio was reached as high as 74% at zero applied bias voltage. Furthermore, the MR ratio decreased as bias voltage increased. It could make the DpMTJ structure to be used in the high-density MRAM devices.

Original languageEnglish
Pages (from-to)914-916
Number of pages3
JournalIEEE Transactions on Magnetics
Issue number2
Publication statusPublished - 2007 Feb 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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