Periodic Flux Interruption and Sustained Two-Dimensional Growth for Molecular Beam Epitaxy

C. P. Lee, K. H. Chang, D. G. Liu, J. S. Wu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Periodic interruption of Ga flux during MBE growth of GaAs has been used to achieve sustained two-dimensional layer-by-layer growth. RHEED intensity oscillation for extended growth shows no degradation in the oscillation amplitude, indicating an atomically smooth growth front throughout the growth.

Original languageEnglish
Pages (from-to)1659-1660
Number of pages2
JournalElectronics Letters
Volume25
Issue number24
DOIs
Publication statusPublished - 1989 Sep 1

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Periodic Flux Interruption and Sustained Two-Dimensional Growth for Molecular Beam Epitaxy'. Together they form a unique fingerprint.

  • Cite this