Abstract
Periodic interruption of Ga flux during MBE growth of GaAs has been used to achieve sustained two-dimensional layer-by-layer growth. RHEED intensity oscillation for extended growth shows no degradation in the oscillation amplitude, indicating an atomically smooth growth front throughout the growth.
| Original language | English |
|---|---|
| Pages (from-to) | 1659-1660 |
| Number of pages | 2 |
| Journal | Electronics Letters |
| Volume | 25 |
| Issue number | 24 |
| DOIs | |
| Publication status | Published - 1989 Sep 1 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
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Cite this
Lee, C. P., Chang, K. H., Liu, D. G., & Wu, J. S. (1989). Periodic Flux Interruption and Sustained Two-Dimensional Growth for Molecular Beam Epitaxy. Electronics Letters, 25(24), 1659-1660. https://doi.org/10.1049/el:19891112