Periodic Flux Interruption and Sustained Two-Dimensional Growth for Molecular Beam Epitaxy

C. P. Lee, K. H. Chang, D. G. Liu, J. S. Wu

Research output: Contribution to journal › Article

2 Citations (Scopus)

Abstract

Periodic interruption of Ga flux during MBE growth of GaAs has been used to achieve sustained two-dimensional layer-by-layer growth. RHEED intensity oscillation for extended growth shows no degradation in the oscillation amplitude, indicating an atomically smooth growth front throughout the growth.

Original languageEnglish
Pages (from-to)1659-1660
Number of pages2
JournalElectronics Letters
Volume25
Issue number24
DOIs
Publication statusPublished - 1989 Sep 1

Fingerprint

Molecular beam epitaxy
Fluxes
Reflection high energy electron diffraction
Degradation

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Lee, C. P. ; Chang, K. H. ; Liu, D. G. ; Wu, J. S. / Periodic Flux Interruption and Sustained Two-Dimensional Growth for Molecular Beam Epitaxy. In: Electronics Letters. 1989 ; Vol. 25, No. 24. pp. 1659-1660.
@article{911be39b0b154bb19435c9864bb46ea9,
title = "Periodic Flux Interruption and Sustained Two-Dimensional Growth for Molecular Beam Epitaxy",
abstract = "Periodic interruption of Ga flux during MBE growth of GaAs has been used to achieve sustained two-dimensional layer-by-layer growth. RHEED intensity oscillation for extended growth shows no degradation in the oscillation amplitude, indicating an atomically smooth growth front throughout the growth.",
author = "Lee, {C. P.} and Chang, {K. H.} and Liu, {D. G.} and Wu, {J. S.}",
year = "1989",
month = "9",
day = "1",
doi = "10.1049/el:19891112",
language = "English",
volume = "25",
pages = "1659--1660",
journal = "Electronics Letters",
issn = "0013-5194",
publisher = "Institution of Engineering and Technology",
number = "24",

}

Lee, CP, Chang, KH, Liu, DG & Wu, JS 1989, 'Periodic Flux Interruption and Sustained Two-Dimensional Growth for Molecular Beam Epitaxy', Electronics Letters, vol. 25, no. 24, pp. 1659-1660. https://doi.org/10.1049/el:19891112

Periodic Flux Interruption and Sustained Two-Dimensional Growth for Molecular Beam Epitaxy. / Lee, C. P.; Chang, K. H.; Liu, D. G.; Wu, J. S.

In: Electronics Letters, Vol. 25, No. 24, 01.09.1989, p. 1659-1660.

Research output: Contribution to journal › Article

TY - JOUR

T1 - Periodic Flux Interruption and Sustained Two-Dimensional Growth for Molecular Beam Epitaxy

AU - Lee, C. P.

AU - Chang, K. H.

AU - Liu, D. G.

AU - Wu, J. S.

PY - 1989/9/1

Y1 - 1989/9/1

N2 - Periodic interruption of Ga flux during MBE growth of GaAs has been used to achieve sustained two-dimensional layer-by-layer growth. RHEED intensity oscillation for extended growth shows no degradation in the oscillation amplitude, indicating an atomically smooth growth front throughout the growth.

AB - Periodic interruption of Ga flux during MBE growth of GaAs has been used to achieve sustained two-dimensional layer-by-layer growth. RHEED intensity oscillation for extended growth shows no degradation in the oscillation amplitude, indicating an atomically smooth growth front throughout the growth.

UR - http://www.scopus.com/inward/record.url?scp=0024771270&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024771270&partnerID=8YFLogxK

U2 - 10.1049/el:19891112

DO - 10.1049/el:19891112

M3 - Article

AN - SCOPUS:0024771270

VL - 25

SP - 1659

EP - 1660

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 24

ER -

Lee CP, Chang KH, Liu DG, Wu JS. Periodic Flux Interruption and Sustained Two-Dimensional Growth for Molecular Beam Epitaxy. Electronics Letters. 1989 Sep 1;25(24):1659-1660. https://doi.org/10.1049/el:19891112

Access to Document