Periodic Flux Interruption and Sustained Two-Dimensional Growth for Molecular Beam Epitaxy

C. P. Lee; K. H. Chang; D. G. Liu; J. S. Wu

doi:10.1049/el:19891112

Periodic Flux Interruption and Sustained Two-Dimensional Growth for Molecular Beam Epitaxy

C. P. Lee, K. H. Chang, D. G. Liu, J. S. Wu

Department of Electronic Engineering

Research output: Contribution to journal › Article

2 Citations (Scopus)

Abstract

Periodic interruption of Ga flux during MBE growth of GaAs has been used to achieve sustained two-dimensional layer-by-layer growth. RHEED intensity oscillation for extended growth shows no degradation in the oscillation amplitude, indicating an atomically smooth growth front throughout the growth.

Original language	English
Pages (from-to)	1659-1660
Number of pages	2
Journal	Electronics Letters
Volume	25
Issue number	24
DOIs	https://doi.org/10.1049/el:19891112
Publication status	Published - 1989 Sep 1

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All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Cite this

Lee, C. P., Chang, K. H., Liu, D. G., & Wu, J. S. (1989). Periodic Flux Interruption and Sustained Two-Dimensional Growth for Molecular Beam Epitaxy. Electronics Letters, 25(24), 1659-1660. https://doi.org/10.1049/el:19891112

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abstract = "Periodic interruption of Ga flux during MBE growth of GaAs has been used to achieve sustained two-dimensional layer-by-layer growth. RHEED intensity oscillation for extended growth shows no degradation in the oscillation amplitude, indicating an atomically smooth growth front throughout the growth.",

author = "Lee, {C. P.} and Chang, {K. H.} and Liu, {D. G.} and Wu, {J. S.}",

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Access to Document

10.1049/el:19891112