Periodic Flux Interruption and Sustained Two-Dimensional Growth for Molecular Beam Epitaxy

C. P. Lee, K. H. Chang, D. G. Liu, Jenq-Shinn Wu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Periodic interruption of Ga flux during MBE growth of GaAs has been used to achieve sustained two-dimensional layer-by-layer growth. RHEED intensity oscillation for extended growth shows no degradation in the oscillation amplitude, indicating an atomically smooth growth front throughout the growth.

Original languageEnglish
Pages (from-to)1659-1660
Number of pages2
JournalElectronics Letters
Volume25
Issue number24
DOIs
Publication statusPublished - 1989 Sep 1

Fingerprint

Molecular beam epitaxy
Fluxes
Reflection high energy electron diffraction
Degradation

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Lee, C. P. ; Chang, K. H. ; Liu, D. G. ; Wu, Jenq-Shinn. / Periodic Flux Interruption and Sustained Two-Dimensional Growth for Molecular Beam Epitaxy. In: Electronics Letters. 1989 ; Vol. 25, No. 24. pp. 1659-1660.
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Periodic Flux Interruption and Sustained Two-Dimensional Growth for Molecular Beam Epitaxy. / Lee, C. P.; Chang, K. H.; Liu, D. G.; Wu, Jenq-Shinn.

In: Electronics Letters, Vol. 25, No. 24, 01.09.1989, p. 1659-1660.

Research output: Contribution to journalArticle

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