Abstract
Periodic interruption of Ga flux during MBE growth of GaAs has been used to achieve sustained two-dimensional layer-by-layer growth. RHEED intensity oscillation for extended growth shows no degradation in the oscillation amplitude, indicating an atomically smooth growth front throughout the growth.
Original language | English |
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Pages (from-to) | 1659-1660 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 25 |
Issue number | 24 |
DOIs | |
Publication status | Published - 1989 Sep 1 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering