Performance enhancement of a-plane light-emitting diodes using InGaN/GaN superlattices

Shih Chun Ling, Te Chung Wang, Jun Rong Chen, Po Chun Liu, Tsung Shine Ko, Tien Chang Lu, Hao Chung Kuo, Shing Chung Wang, Jenq Dar Tsay

Research output: Contribution to journalArticle

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Abstract

We have fabricated a-plane light-emitting diodes (LEDs) with inserted InGaN/GaN superlattices. The structural characteristics and device performance of a-plane light-emitting diodes with/without superlattices were also identified. Transmission electron microscope (TEM) images revealed that the threading dislocation (TD) density for the sample using superlattices was reduced from 3 × 1010 cm-2 down to ̃9 ̃ 109 cm-2. The electroluminescence (EL) intensity of the sample with InGaN/GaN superlattices was enhanced by a factor of 3.42 times to that of the conventional sample without InGaN/GaN superlattices. Furthermore, we observed that the polarization degree of a-plane LEDs with superlattices (56.3%) was much higher than that without superlattices (27.4%). A series of experiments demonstrated that the feasibility of using InGaN/GaN superlattices for the TD reduction and the improvement of luminescence performance in a-plane III-nitride devices.

Original languageEnglish
Article number04C136
JournalJapanese Journal of Applied Physics
Volume48
Issue number4 PART 2
DOIs
Publication statusPublished - 2009 Apr 1

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Superlattices
Light emitting diodes
superlattices
light emitting diodes
augmentation
Electroluminescence
Nitrides
electroluminescence
nitrides
Luminescence
Electron microscopes
electron microscopes
Polarization
luminescence
polarization

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Ling, S. C., Wang, T. C., Chen, J. R., Liu, P. C., Ko, T. S., Lu, T. C., ... Tsay, J. D. (2009). Performance enhancement of a-plane light-emitting diodes using InGaN/GaN superlattices. Japanese Journal of Applied Physics, 48(4 PART 2), [04C136]. https://doi.org/10.1143/JJAP.48.04C136
Ling, Shih Chun ; Wang, Te Chung ; Chen, Jun Rong ; Liu, Po Chun ; Ko, Tsung Shine ; Lu, Tien Chang ; Kuo, Hao Chung ; Wang, Shing Chung ; Tsay, Jenq Dar. / Performance enhancement of a-plane light-emitting diodes using InGaN/GaN superlattices. In: Japanese Journal of Applied Physics. 2009 ; Vol. 48, No. 4 PART 2.
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Ling, SC, Wang, TC, Chen, JR, Liu, PC, Ko, TS, Lu, TC, Kuo, HC, Wang, SC & Tsay, JD 2009, 'Performance enhancement of a-plane light-emitting diodes using InGaN/GaN superlattices', Japanese Journal of Applied Physics, vol. 48, no. 4 PART 2, 04C136. https://doi.org/10.1143/JJAP.48.04C136

Performance enhancement of a-plane light-emitting diodes using InGaN/GaN superlattices. / Ling, Shih Chun; Wang, Te Chung; Chen, Jun Rong; Liu, Po Chun; Ko, Tsung Shine; Lu, Tien Chang; Kuo, Hao Chung; Wang, Shing Chung; Tsay, Jenq Dar.

In: Japanese Journal of Applied Physics, Vol. 48, No. 4 PART 2, 04C136, 01.04.2009.

Research output: Contribution to journalArticle

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AU - Wang, Te Chung

AU - Chen, Jun Rong

AU - Liu, Po Chun

AU - Ko, Tsung Shine

AU - Lu, Tien Chang

AU - Kuo, Hao Chung

AU - Wang, Shing Chung

AU - Tsay, Jenq Dar

PY - 2009/4/1

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N2 - We have fabricated a-plane light-emitting diodes (LEDs) with inserted InGaN/GaN superlattices. The structural characteristics and device performance of a-plane light-emitting diodes with/without superlattices were also identified. Transmission electron microscope (TEM) images revealed that the threading dislocation (TD) density for the sample using superlattices was reduced from 3 × 1010 cm-2 down to ̃9 ̃ 109 cm-2. The electroluminescence (EL) intensity of the sample with InGaN/GaN superlattices was enhanced by a factor of 3.42 times to that of the conventional sample without InGaN/GaN superlattices. Furthermore, we observed that the polarization degree of a-plane LEDs with superlattices (56.3%) was much higher than that without superlattices (27.4%). A series of experiments demonstrated that the feasibility of using InGaN/GaN superlattices for the TD reduction and the improvement of luminescence performance in a-plane III-nitride devices.

AB - We have fabricated a-plane light-emitting diodes (LEDs) with inserted InGaN/GaN superlattices. The structural characteristics and device performance of a-plane light-emitting diodes with/without superlattices were also identified. Transmission electron microscope (TEM) images revealed that the threading dislocation (TD) density for the sample using superlattices was reduced from 3 × 1010 cm-2 down to ̃9 ̃ 109 cm-2. The electroluminescence (EL) intensity of the sample with InGaN/GaN superlattices was enhanced by a factor of 3.42 times to that of the conventional sample without InGaN/GaN superlattices. Furthermore, we observed that the polarization degree of a-plane LEDs with superlattices (56.3%) was much higher than that without superlattices (27.4%). A series of experiments demonstrated that the feasibility of using InGaN/GaN superlattices for the TD reduction and the improvement of luminescence performance in a-plane III-nitride devices.

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