Performance enhancement of a-plane light-emitting diodes using InGaN/GaN superlattices

Shih Chun Ling, Te Chung Wang, Jun Rong Chen, Po Chun Liu, Tsung Shine Ko, Tien Chang Lu, Hao Chung Kuo, Shing Chung Wang, Jenq Dar Tsay

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Abstract

We have fabricated a-plane light-emitting diodes (LEDs) with inserted InGaN/GaN superlattices. The structural characteristics and device performance of a-plane light-emitting diodes with/without superlattices were also identified. Transmission electron microscope (TEM) images revealed that the threading dislocation (TD) density for the sample using superlattices was reduced from 3 × 1010 cm-2 down to ̃9 ̃ 109 cm-2. The electroluminescence (EL) intensity of the sample with InGaN/GaN superlattices was enhanced by a factor of 3.42 times to that of the conventional sample without InGaN/GaN superlattices. Furthermore, we observed that the polarization degree of a-plane LEDs with superlattices (56.3%) was much higher than that without superlattices (27.4%). A series of experiments demonstrated that the feasibility of using InGaN/GaN superlattices for the TD reduction and the improvement of luminescence performance in a-plane III-nitride devices.

Original languageEnglish
Article number04C136
JournalJapanese Journal of Applied Physics
Volume48
Issue number4 PART 2
DOIs
Publication statusPublished - 2009 Apr 1

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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    Ling, S. C., Wang, T. C., Chen, J. R., Liu, P. C., Ko, T. S., Lu, T. C., Kuo, H. C., Wang, S. C., & Tsay, J. D. (2009). Performance enhancement of a-plane light-emitting diodes using InGaN/GaN superlattices. Japanese Journal of Applied Physics, 48(4 PART 2), [04C136]. https://doi.org/10.1143/JJAP.48.04C136