Performance enhancement by the In0.65Ga0.35As pseudomorphic channel on the In0.5Al0.5As metamorphic buffer layer

Cheng Kuo Lin, Jing Chang Wu, Wen Kai Wang, Yi Jen Chan, Jenq-Shinn Wu, Yung Chung Pan, Chung Chih Tsai, Jiun Tsuen Lai

Research output: Contribution to journalArticle

Abstract

We have developed 1-μm gate-length the devices of In0.65 Ga0.65 As pseudomorphic channel (PC) on the In0.5 Al0.5 As metamorphic buffer layer to improve the device performance, as compared with the In0.5 Ga0.5 As lattice matched ones. The dc maximum drain-to-source current and transconductance enhances from 340 to 490 mA/mm and from 450 to 670 mS/mm. The RF current gain cut-off frequency and maximum oscillation frequency increases from 22 to 31 GHz and from 42 to 58 GHz, respectively. The extrinsic total delay times are quantitatively investigated, and the effective velocity of electrons improves from 1.8 × 107 cm/s to 2.3 × 107 cm/s by this In0.65 Ga0.35 As PC.

Original languageEnglish
Pages (from-to)1214-1217
Number of pages4
JournalIEEE Transactions on Electron Devices
Volume51
Issue number7
DOIs
Publication statusPublished - 2004 Jul 1

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Cutoff frequency
Transconductance
Buffer layers
Time delay
Electrons

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Lin, Cheng Kuo ; Wu, Jing Chang ; Wang, Wen Kai ; Chan, Yi Jen ; Wu, Jenq-Shinn ; Pan, Yung Chung ; Tsai, Chung Chih ; Lai, Jiun Tsuen. / Performance enhancement by the In0.65Ga0.35As pseudomorphic channel on the In0.5Al0.5As metamorphic buffer layer. In: IEEE Transactions on Electron Devices. 2004 ; Vol. 51, No. 7. pp. 1214-1217.
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abstract = "We have developed 1-μm gate-length the devices of In0.65 Ga0.65 As pseudomorphic channel (PC) on the In0.5 Al0.5 As metamorphic buffer layer to improve the device performance, as compared with the In0.5 Ga0.5 As lattice matched ones. The dc maximum drain-to-source current and transconductance enhances from 340 to 490 mA/mm and from 450 to 670 mS/mm. The RF current gain cut-off frequency and maximum oscillation frequency increases from 22 to 31 GHz and from 42 to 58 GHz, respectively. The extrinsic total delay times are quantitatively investigated, and the effective velocity of electrons improves from 1.8 × 107 cm/s to 2.3 × 107 cm/s by this In0.65 Ga0.35 As PC.",
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Performance enhancement by the In0.65Ga0.35As pseudomorphic channel on the In0.5Al0.5As metamorphic buffer layer. / Lin, Cheng Kuo; Wu, Jing Chang; Wang, Wen Kai; Chan, Yi Jen; Wu, Jenq-Shinn; Pan, Yung Chung; Tsai, Chung Chih; Lai, Jiun Tsuen.

In: IEEE Transactions on Electron Devices, Vol. 51, No. 7, 01.07.2004, p. 1214-1217.

Research output: Contribution to journalArticle

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AU - Lin, Cheng Kuo

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AU - Wang, Wen Kai

AU - Chan, Yi Jen

AU - Wu, Jenq-Shinn

AU - Pan, Yung Chung

AU - Tsai, Chung Chih

AU - Lai, Jiun Tsuen

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