Performance and reliability of wafer-bonded AlGaInP/mirror/Si light-emitting diodes

R. H. Horng, D. S. Wuu, W. C. Peng, Man-Fang Huang, P. H. Liu, C. H. Seieh, K. C. Lin

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

AlGaInP light emitting diode (LED) with a minor substrate has been successfully fabricated by wafer bonding. The bonding technique using a metallic interlayer has been developed to eliminate handling the fragile, flee-standing epilayers. Various structures of the mirror substrate have been studied, and a suitable structure of Au/AuBe/SiO2/Si is proposed. From the observation of the chip fabrication process, it was found that the SiO2 layer could isolate the stress causing from the Si substrate. The device performance of bonded LED is obviously far superior to that of the standard absorb-substrate LED. It exhibits normal p-n diode behavior with a low series resistance. Moreover, the emission wavelength of the bonded LED was independent of the injection current. The low forward series resistance and a good heat sink provided by Si substrate solve the joule heating inhering in conventional LED problem. Furthermore, the bonded LED with high reliability has been demonstrated.

Original languageEnglish
Pages (from-to)507-513
Number of pages7
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4078
Publication statusPublished - 2000 Jan 1
EventOptoelectronic Materials and Devices II - Taipei, Taiwan
Duration: 2000 Jul 262000 Jul 28

Fingerprint

Diode
Wafer
Light emitting diodes
Mirror
Mirrors
light emitting diodes
wafers
mirrors
Substrate
Substrates
SiO2
Wafer bonding
Joule heating
Joule Heating
Epilayers
heat sinks
Heat sinks
Series
interlayers
Diodes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Horng, R. H. ; Wuu, D. S. ; Peng, W. C. ; Huang, Man-Fang ; Liu, P. H. ; Seieh, C. H. ; Lin, K. C. / Performance and reliability of wafer-bonded AlGaInP/mirror/Si light-emitting diodes. In: Proceedings of SPIE - The International Society for Optical Engineering. 2000 ; Vol. 4078. pp. 507-513.
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Performance and reliability of wafer-bonded AlGaInP/mirror/Si light-emitting diodes. / Horng, R. H.; Wuu, D. S.; Peng, W. C.; Huang, Man-Fang; Liu, P. H.; Seieh, C. H.; Lin, K. C.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 4078, 01.01.2000, p. 507-513.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Performance and reliability of wafer-bonded AlGaInP/mirror/Si light-emitting diodes

AU - Horng, R. H.

AU - Wuu, D. S.

AU - Peng, W. C.

AU - Huang, Man-Fang

AU - Liu, P. H.

AU - Seieh, C. H.

AU - Lin, K. C.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - AlGaInP light emitting diode (LED) with a minor substrate has been successfully fabricated by wafer bonding. The bonding technique using a metallic interlayer has been developed to eliminate handling the fragile, flee-standing epilayers. Various structures of the mirror substrate have been studied, and a suitable structure of Au/AuBe/SiO2/Si is proposed. From the observation of the chip fabrication process, it was found that the SiO2 layer could isolate the stress causing from the Si substrate. The device performance of bonded LED is obviously far superior to that of the standard absorb-substrate LED. It exhibits normal p-n diode behavior with a low series resistance. Moreover, the emission wavelength of the bonded LED was independent of the injection current. The low forward series resistance and a good heat sink provided by Si substrate solve the joule heating inhering in conventional LED problem. Furthermore, the bonded LED with high reliability has been demonstrated.

AB - AlGaInP light emitting diode (LED) with a minor substrate has been successfully fabricated by wafer bonding. The bonding technique using a metallic interlayer has been developed to eliminate handling the fragile, flee-standing epilayers. Various structures of the mirror substrate have been studied, and a suitable structure of Au/AuBe/SiO2/Si is proposed. From the observation of the chip fabrication process, it was found that the SiO2 layer could isolate the stress causing from the Si substrate. The device performance of bonded LED is obviously far superior to that of the standard absorb-substrate LED. It exhibits normal p-n diode behavior with a low series resistance. Moreover, the emission wavelength of the bonded LED was independent of the injection current. The low forward series resistance and a good heat sink provided by Si substrate solve the joule heating inhering in conventional LED problem. Furthermore, the bonded LED with high reliability has been demonstrated.

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