Pentacene ohmic contact on the transparent conductive oxide films

Jian An Chu; Jian Jhou Zeng; Kuo Chen Wu; Yow Jon Lin

doi:10.1016/j.tsf.2010.09.005

Pentacene ohmic contact on the transparent conductive oxide films

Jian An Chu, Jian Jhou Zeng, Kuo Chen Wu, Yow Jon Lin

Graduate Institute of Photonics

Research output: Contribution to journal › Article

2 Citations (Scopus)

Abstract

Low-resistance ohmic contacts are essential to improve the performance of pentacene-based electronic and optoelectronic devices. In this study, we reported ohmic contact formation at the indium tin oxide (ITO)/pentacene and indium cerium oxide (ICO)/pentacene interfaces. According to the observed results from current-voltage and Kelvin probe measurements, we found that the lower contact resistivity of the ICO/pentacene sample than the ITO/pentacene sample may be attributed to the higher surface work function of ICO than ITO.

Original language	English
Pages (from-to)	868-871
Number of pages	4
Journal	Thin Solid Films
Volume	519
Issue number	2
DOIs	https://doi.org/10.1016/j.tsf.2010.09.005
Publication status	Published - 2010 Nov 1

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All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Cite this

Chu, J. A., Zeng, J. J., Wu, K. C., & Lin, Y. J. (2010). Pentacene ohmic contact on the transparent conductive oxide films. Thin Solid Films, 519(2), 868-871. https://doi.org/10.1016/j.tsf.2010.09.005

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AB - Low-resistance ohmic contacts are essential to improve the performance of pentacene-based electronic and optoelectronic devices. In this study, we reported ohmic contact formation at the indium tin oxide (ITO)/pentacene and indium cerium oxide (ICO)/pentacene interfaces. According to the observed results from current-voltage and Kelvin probe measurements, we found that the lower contact resistivity of the ICO/pentacene sample than the ITO/pentacene sample may be attributed to the higher surface work function of ICO than ITO.

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Access to Document

10.1016/j.tsf.2010.09.005