Pentacene ohmic contact on the transparent conductive oxide films

Jian An Chu, Jian Jhou Zeng, Kuo Chen Wu, Yow-Jon Lin

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Low-resistance ohmic contacts are essential to improve the performance of pentacene-based electronic and optoelectronic devices. In this study, we reported ohmic contact formation at the indium tin oxide (ITO)/pentacene and indium cerium oxide (ICO)/pentacene interfaces. According to the observed results from current-voltage and Kelvin probe measurements, we found that the lower contact resistivity of the ICO/pentacene sample than the ITO/pentacene sample may be attributed to the higher surface work function of ICO than ITO.

Original languageEnglish
Pages (from-to)868-871
Number of pages4
JournalThin Solid Films
Volume519
Issue number2
DOIs
Publication statusPublished - 2010 Nov 1

Fingerprint

Conductive films
Ohmic contacts
indium oxides
Indium
Oxide films
oxide films
electric contacts
cerium oxides
Cerium
Tin oxides
tin oxides
Oxides
Optoelectronic devices
low resistance
optoelectronic devices
pentacene
Electric potential
electrical resistivity
probes
electric potential

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Chu, Jian An ; Zeng, Jian Jhou ; Wu, Kuo Chen ; Lin, Yow-Jon. / Pentacene ohmic contact on the transparent conductive oxide films. In: Thin Solid Films. 2010 ; Vol. 519, No. 2. pp. 868-871.
@article{f16c6004f3744558b4fe292f4e09c077,
title = "Pentacene ohmic contact on the transparent conductive oxide films",
abstract = "Low-resistance ohmic contacts are essential to improve the performance of pentacene-based electronic and optoelectronic devices. In this study, we reported ohmic contact formation at the indium tin oxide (ITO)/pentacene and indium cerium oxide (ICO)/pentacene interfaces. According to the observed results from current-voltage and Kelvin probe measurements, we found that the lower contact resistivity of the ICO/pentacene sample than the ITO/pentacene sample may be attributed to the higher surface work function of ICO than ITO.",
author = "Chu, {Jian An} and Zeng, {Jian Jhou} and Wu, {Kuo Chen} and Yow-Jon Lin",
year = "2010",
month = "11",
day = "1",
doi = "10.1016/j.tsf.2010.09.005",
language = "English",
volume = "519",
pages = "868--871",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "2",

}

Pentacene ohmic contact on the transparent conductive oxide films. / Chu, Jian An; Zeng, Jian Jhou; Wu, Kuo Chen; Lin, Yow-Jon.

In: Thin Solid Films, Vol. 519, No. 2, 01.11.2010, p. 868-871.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Pentacene ohmic contact on the transparent conductive oxide films

AU - Chu, Jian An

AU - Zeng, Jian Jhou

AU - Wu, Kuo Chen

AU - Lin, Yow-Jon

PY - 2010/11/1

Y1 - 2010/11/1

N2 - Low-resistance ohmic contacts are essential to improve the performance of pentacene-based electronic and optoelectronic devices. In this study, we reported ohmic contact formation at the indium tin oxide (ITO)/pentacene and indium cerium oxide (ICO)/pentacene interfaces. According to the observed results from current-voltage and Kelvin probe measurements, we found that the lower contact resistivity of the ICO/pentacene sample than the ITO/pentacene sample may be attributed to the higher surface work function of ICO than ITO.

AB - Low-resistance ohmic contacts are essential to improve the performance of pentacene-based electronic and optoelectronic devices. In this study, we reported ohmic contact formation at the indium tin oxide (ITO)/pentacene and indium cerium oxide (ICO)/pentacene interfaces. According to the observed results from current-voltage and Kelvin probe measurements, we found that the lower contact resistivity of the ICO/pentacene sample than the ITO/pentacene sample may be attributed to the higher surface work function of ICO than ITO.

UR - http://www.scopus.com/inward/record.url?scp=77958479750&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77958479750&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2010.09.005

DO - 10.1016/j.tsf.2010.09.005

M3 - Article

AN - SCOPUS:77958479750

VL - 519

SP - 868

EP - 871

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 2

ER -