Abstract
Low-resistance ohmic contacts are essential to improve the performance of pentacene-based electronic and optoelectronic devices. In this study, we reported ohmic contact formation at the indium tin oxide (ITO)/pentacene and indium cerium oxide (ICO)/pentacene interfaces. According to the observed results from current-voltage and Kelvin probe measurements, we found that the lower contact resistivity of the ICO/pentacene sample than the ITO/pentacene sample may be attributed to the higher surface work function of ICO than ITO.
| Original language | English |
|---|---|
| Pages (from-to) | 868-871 |
| Number of pages | 4 |
| Journal | Thin Solid Films |
| Volume | 519 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2010 Nov 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
Cite this
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Pentacene ohmic contact on the transparent conductive oxide films. / Chu, Jian An; Zeng, Jian Jhou; Wu, Kuo Chen; Lin, Yow-Jon.
In: Thin Solid Films, Vol. 519, No. 2, 01.11.2010, p. 868-871.Research output: Contribution to journal › Article
TY - JOUR
T1 - Pentacene ohmic contact on the transparent conductive oxide films
AU - Chu, Jian An
AU - Zeng, Jian Jhou
AU - Wu, Kuo Chen
AU - Lin, Yow-Jon
PY - 2010/11/1
Y1 - 2010/11/1
N2 - Low-resistance ohmic contacts are essential to improve the performance of pentacene-based electronic and optoelectronic devices. In this study, we reported ohmic contact formation at the indium tin oxide (ITO)/pentacene and indium cerium oxide (ICO)/pentacene interfaces. According to the observed results from current-voltage and Kelvin probe measurements, we found that the lower contact resistivity of the ICO/pentacene sample than the ITO/pentacene sample may be attributed to the higher surface work function of ICO than ITO.
AB - Low-resistance ohmic contacts are essential to improve the performance of pentacene-based electronic and optoelectronic devices. In this study, we reported ohmic contact formation at the indium tin oxide (ITO)/pentacene and indium cerium oxide (ICO)/pentacene interfaces. According to the observed results from current-voltage and Kelvin probe measurements, we found that the lower contact resistivity of the ICO/pentacene sample than the ITO/pentacene sample may be attributed to the higher surface work function of ICO than ITO.
UR - http://www.scopus.com/inward/record.url?scp=77958479750&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77958479750&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2010.09.005
DO - 10.1016/j.tsf.2010.09.005
M3 - Article
AN - SCOPUS:77958479750
VL - 519
SP - 868
EP - 871
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 2
ER -