Parameter investigation of nano-sized etching in an ICP silicon etching system

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The effect of process parameters on the performance of silicon nano-sized etching in an Inductive-Coupled-Plasma Reactive-Ion-Etching (ICP-RIE) system is studied by the Taguchi experimental method. The Standard L9 orthogonal array is considered to evaluate the parameter effect and to obtain the optimum conditions. A total of 9 parameter settings are conducted to investigate the four parameters with three levels for each. The four parameters include the substrate temperature, bias power, gas cycle time and C4F8 gas flow rate. The source power and the SF6 gas flow rate are respectively fixed to a value of 500 W and 120 seem. The etching bottom roughness and the etching rate are the quality characteristics to evaluate the parameter effect. The results show that both the C4F8 flow rate and the bias power have the significant influence on the bottom roughness, while both the cycle time and the bias power play an important role on etching rate. And, the optimum conditions are obtained, of which the predicted quality has been confirmed by verification experiment.

Original languageEnglish
Title of host publicationNanoSingapore 2006
Subtitle of host publicationIEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings
Pages467-471
Number of pages5
Volume2006
DOIs
Publication statusPublished - 2006 Nov 14
Event2006 IEEE Conference on Emerging Technologies - Nanoelectronics - Singapore, Singapore
Duration: 2006 Jan 102006 Jan 13

Other

Other2006 IEEE Conference on Emerging Technologies - Nanoelectronics
CountrySingapore
CitySingapore
Period06-01-1006-01-13

Fingerprint

Etching
Silicon
Flow rate
Flow of gases
Surface roughness
Plasma etching
Reactive ion etching
Substrates
Gases
Experiments
Temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Chen, S. C., Kuo, C. Y., Lin, Y-C. O. Y. C., Wu, J-C., & Horng, L. (2006). Parameter investigation of nano-sized etching in an ICP silicon etching system. In NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings (Vol. 2006, pp. 467-471). [1609773] https://doi.org/10.1109/NANOEL.2006.1609773
Chen, S. C. ; Kuo, C. Y. ; Lin, Yi-Cheng or Y. C. ; Wu, Jong-Ching ; Horng, Lance. / Parameter investigation of nano-sized etching in an ICP silicon etching system. NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings. Vol. 2006 2006. pp. 467-471
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abstract = "The effect of process parameters on the performance of silicon nano-sized etching in an Inductive-Coupled-Plasma Reactive-Ion-Etching (ICP-RIE) system is studied by the Taguchi experimental method. The Standard L9 orthogonal array is considered to evaluate the parameter effect and to obtain the optimum conditions. A total of 9 parameter settings are conducted to investigate the four parameters with three levels for each. The four parameters include the substrate temperature, bias power, gas cycle time and C4F8 gas flow rate. The source power and the SF6 gas flow rate are respectively fixed to a value of 500 W and 120 seem. The etching bottom roughness and the etching rate are the quality characteristics to evaluate the parameter effect. The results show that both the C4F8 flow rate and the bias power have the significant influence on the bottom roughness, while both the cycle time and the bias power play an important role on etching rate. And, the optimum conditions are obtained, of which the predicted quality has been confirmed by verification experiment.",
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Chen, SC, Kuo, CY, Lin, Y-COYC, Wu, J-C & Horng, L 2006, Parameter investigation of nano-sized etching in an ICP silicon etching system. in NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings. vol. 2006, 1609773, pp. 467-471, 2006 IEEE Conference on Emerging Technologies - Nanoelectronics, Singapore, Singapore, 06-01-10. https://doi.org/10.1109/NANOEL.2006.1609773

Parameter investigation of nano-sized etching in an ICP silicon etching system. / Chen, S. C.; Kuo, C. Y.; Lin, Yi-Cheng or Y. C.; Wu, Jong-Ching; Horng, Lance.

NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings. Vol. 2006 2006. p. 467-471 1609773.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AU - Horng, Lance

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N2 - The effect of process parameters on the performance of silicon nano-sized etching in an Inductive-Coupled-Plasma Reactive-Ion-Etching (ICP-RIE) system is studied by the Taguchi experimental method. The Standard L9 orthogonal array is considered to evaluate the parameter effect and to obtain the optimum conditions. A total of 9 parameter settings are conducted to investigate the four parameters with three levels for each. The four parameters include the substrate temperature, bias power, gas cycle time and C4F8 gas flow rate. The source power and the SF6 gas flow rate are respectively fixed to a value of 500 W and 120 seem. The etching bottom roughness and the etching rate are the quality characteristics to evaluate the parameter effect. The results show that both the C4F8 flow rate and the bias power have the significant influence on the bottom roughness, while both the cycle time and the bias power play an important role on etching rate. And, the optimum conditions are obtained, of which the predicted quality has been confirmed by verification experiment.

AB - The effect of process parameters on the performance of silicon nano-sized etching in an Inductive-Coupled-Plasma Reactive-Ion-Etching (ICP-RIE) system is studied by the Taguchi experimental method. The Standard L9 orthogonal array is considered to evaluate the parameter effect and to obtain the optimum conditions. A total of 9 parameter settings are conducted to investigate the four parameters with three levels for each. The four parameters include the substrate temperature, bias power, gas cycle time and C4F8 gas flow rate. The source power and the SF6 gas flow rate are respectively fixed to a value of 500 W and 120 seem. The etching bottom roughness and the etching rate are the quality characteristics to evaluate the parameter effect. The results show that both the C4F8 flow rate and the bias power have the significant influence on the bottom roughness, while both the cycle time and the bias power play an important role on etching rate. And, the optimum conditions are obtained, of which the predicted quality has been confirmed by verification experiment.

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Chen SC, Kuo CY, Lin Y-COYC, Wu J-C, Horng L. Parameter investigation of nano-sized etching in an ICP silicon etching system. In NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings. Vol. 2006. 2006. p. 467-471. 1609773 https://doi.org/10.1109/NANOEL.2006.1609773