p-polarized infrared attenuated total reflection study of InN thin films grown on Si(111) substrate

S. S. Ng; S. C. Lee; P. K. Ooi; Z. Hassan; H. Abu Hassan; W. L. Chen

doi:10.1002/pssr.201004173

p-polarized infrared attenuated total reflection study of InN thin films grown on Si(111) substrate

S. S. Ng, S. C. Lee, P. K. Ooi, Z. Hassan, H. Abu Hassan, W. L. Chen

Department of Electronic Engineering

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2 Citations (Scopus)

Abstract

We report for the first time the surface phonon polariton (SPP) and interface phonon polariton (IPP) characteristics of InN thin films grown on AlN buffer layer on Si(111) substrate by molecular beam expitaxy. The p-polarized infrared attenuated total reflection technique was used to excite the SPP and IPP modes of the sample. It was found that the SPP mode of InN and the IPP mode of InN/AlN were clearly observed at 609 cm^-1 and 877 cm^-1, respectively. The origins of the observed peaks were verified by theoretical simulations based on the anisotropic model. In general, a good agreement between the experimental and theoretical results was obtained. Finally, the effect of the free carriers on the SPP mode is discussed.

Original language	English
Pages (from-to)	191-193
Number of pages	3
Journal	Physica Status Solidi - Rapid Research Letters
Volume	4
Issue number	8-9
DOIs	https://doi.org/10.1002/pssr.201004173
Publication status	Published - 2010 Sep 1

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All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics

Cite this

Ng, S. S., Lee, S. C., Ooi, P. K., Hassan, Z., Hassan, H. A., & Chen, W. L. (2010). p-polarized infrared attenuated total reflection study of InN thin films grown on Si(111) substrate. Physica Status Solidi - Rapid Research Letters, 4(8-9), 191-193. https://doi.org/10.1002/pssr.201004173

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abstract = "We report for the first time the surface phonon polariton (SPP) and interface phonon polariton (IPP) characteristics of InN thin films grown on AlN buffer layer on Si(111) substrate by molecular beam expitaxy. The p-polarized infrared attenuated total reflection technique was used to excite the SPP and IPP modes of the sample. It was found that the SPP mode of InN and the IPP mode of InN/AlN were clearly observed at 609 cm-1 and 877 cm-1, respectively. The origins of the observed peaks were verified by theoretical simulations based on the anisotropic model. In general, a good agreement between the experimental and theoretical results was obtained. Finally, the effect of the free carriers on the SPP mode is discussed.",

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T1 - p-polarized infrared attenuated total reflection study of InN thin films grown on Si(111) substrate

AU - Ng, S. S.

AU - Lee, S. C.

AU - Ooi, P. K.

AU - Hassan, Z.

AU - Hassan, H. Abu

AU - Chen, W. L.

PY - 2010/9/1

Y1 - 2010/9/1

N2 - We report for the first time the surface phonon polariton (SPP) and interface phonon polariton (IPP) characteristics of InN thin films grown on AlN buffer layer on Si(111) substrate by molecular beam expitaxy. The p-polarized infrared attenuated total reflection technique was used to excite the SPP and IPP modes of the sample. It was found that the SPP mode of InN and the IPP mode of InN/AlN were clearly observed at 609 cm-1 and 877 cm-1, respectively. The origins of the observed peaks were verified by theoretical simulations based on the anisotropic model. In general, a good agreement between the experimental and theoretical results was obtained. Finally, the effect of the free carriers on the SPP mode is discussed.

AB - We report for the first time the surface phonon polariton (SPP) and interface phonon polariton (IPP) characteristics of InN thin films grown on AlN buffer layer on Si(111) substrate by molecular beam expitaxy. The p-polarized infrared attenuated total reflection technique was used to excite the SPP and IPP modes of the sample. It was found that the SPP mode of InN and the IPP mode of InN/AlN were clearly observed at 609 cm-1 and 877 cm-1, respectively. The origins of the observed peaks were verified by theoretical simulations based on the anisotropic model. In general, a good agreement between the experimental and theoretical results was obtained. Finally, the effect of the free carriers on the SPP mode is discussed.

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10.1002/pssr.201004173