p-polarized infrared attenuated total reflection study of InN thin films grown on Si(111) substrate

S. S. Ng; S. C. Lee; P. K. Ooi; Z. Hassan; H. Abu Hassan; W. L. Chen

doi:10.1002/pssr.201004173

p-polarized infrared attenuated total reflection study of InN thin films grown on Si(111) substrate

S. S. Ng, S. C. Lee, P. K. Ooi, Z. Hassan, H. Abu Hassan, W. L. Chen

Department of Electronic Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We report for the first time the surface phonon polariton (SPP) and interface phonon polariton (IPP) characteristics of InN thin films grown on AlN buffer layer on Si(111) substrate by molecular beam expitaxy. The p-polarized infrared attenuated total reflection technique was used to excite the SPP and IPP modes of the sample. It was found that the SPP mode of InN and the IPP mode of InN/AlN were clearly observed at 609 cm^-1 and 877 cm^-1, respectively. The origins of the observed peaks were verified by theoretical simulations based on the anisotropic model. In general, a good agreement between the experimental and theoretical results was obtained. Finally, the effect of the free carriers on the SPP mode is discussed.

Original language	English
Pages (from-to)	191-193
Number of pages	3
Journal	Physica Status Solidi - Rapid Research Letters
Volume	4
Issue number	8-9
DOIs	https://doi.org/10.1002/pssr.201004173
Publication status	Published - 2010 Sep 1

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics

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@article{cef9b05818094fa9af6a9c9ef32820e7,

title = "p-polarized infrared attenuated total reflection study of InN thin films grown on Si(111) substrate",

abstract = "We report for the first time the surface phonon polariton (SPP) and interface phonon polariton (IPP) characteristics of InN thin films grown on AlN buffer layer on Si(111) substrate by molecular beam expitaxy. The p-polarized infrared attenuated total reflection technique was used to excite the SPP and IPP modes of the sample. It was found that the SPP mode of InN and the IPP mode of InN/AlN were clearly observed at 609 cm-1 and 877 cm-1, respectively. The origins of the observed peaks were verified by theoretical simulations based on the anisotropic model. In general, a good agreement between the experimental and theoretical results was obtained. Finally, the effect of the free carriers on the SPP mode is discussed.",

author = "Ng, {S. S.} and Lee, {S. C.} and Ooi, {P. K.} and Z. Hassan and Hassan, {H. Abu} and Chen, {W. L.}",

year = "2010",

month = sep,

day = "1",

doi = "10.1002/pssr.201004173",

language = "English",

volume = "4",

pages = "191--193",

journal = "Physica Status Solidi - Rapid Research Letters",

issn = "1862-6254",

publisher = "Wiley-VCH Verlag",

number = "8-9",

}

TY - JOUR

T1 - p-polarized infrared attenuated total reflection study of InN thin films grown on Si(111) substrate

AU - Ng, S. S.

AU - Lee, S. C.

AU - Ooi, P. K.

AU - Hassan, Z.

AU - Hassan, H. Abu

AU - Chen, W. L.

PY - 2010/9/1

Y1 - 2010/9/1

N2 - We report for the first time the surface phonon polariton (SPP) and interface phonon polariton (IPP) characteristics of InN thin films grown on AlN buffer layer on Si(111) substrate by molecular beam expitaxy. The p-polarized infrared attenuated total reflection technique was used to excite the SPP and IPP modes of the sample. It was found that the SPP mode of InN and the IPP mode of InN/AlN were clearly observed at 609 cm-1 and 877 cm-1, respectively. The origins of the observed peaks were verified by theoretical simulations based on the anisotropic model. In general, a good agreement between the experimental and theoretical results was obtained. Finally, the effect of the free carriers on the SPP mode is discussed.

AB - We report for the first time the surface phonon polariton (SPP) and interface phonon polariton (IPP) characteristics of InN thin films grown on AlN buffer layer on Si(111) substrate by molecular beam expitaxy. The p-polarized infrared attenuated total reflection technique was used to excite the SPP and IPP modes of the sample. It was found that the SPP mode of InN and the IPP mode of InN/AlN were clearly observed at 609 cm-1 and 877 cm-1, respectively. The origins of the observed peaks were verified by theoretical simulations based on the anisotropic model. In general, a good agreement between the experimental and theoretical results was obtained. Finally, the effect of the free carriers on the SPP mode is discussed.

UR - http://www.scopus.com/inward/record.url?scp=77957029231&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77957029231&partnerID=8YFLogxK

U2 - 10.1002/pssr.201004173

DO - 10.1002/pssr.201004173

M3 - Article

AN - SCOPUS:77957029231

VL - 4

SP - 191

EP - 193

JO - Physica Status Solidi - Rapid Research Letters

JF - Physica Status Solidi - Rapid Research Letters

SN - 1862-6254

IS - 8-9

ER -