Abstract
We report for the first time the surface phonon polariton (SPP) and interface phonon polariton (IPP) characteristics of InN thin films grown on AlN buffer layer on Si(111) substrate by molecular beam expitaxy. The p-polarized infrared attenuated total reflection technique was used to excite the SPP and IPP modes of the sample. It was found that the SPP mode of InN and the IPP mode of InN/AlN were clearly observed at 609 cm-1 and 877 cm-1, respectively. The origins of the observed peaks were verified by theoretical simulations based on the anisotropic model. In general, a good agreement between the experimental and theoretical results was obtained. Finally, the effect of the free carriers on the SPP mode is discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 191-193 |
| Number of pages | 3 |
| Journal | Physica Status Solidi - Rapid Research Letters |
| Volume | 4 |
| Issue number | 8-9 |
| DOIs | |
| Publication status | Published - 2010 Sep 1 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
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p-polarized infrared attenuated total reflection study of InN thin films grown on Si(111) substrate. / Ng, S. S.; Lee, S. C.; Ooi, P. K.; Hassan, Z.; Hassan, H. Abu; Chen, W. L.
In: Physica Status Solidi - Rapid Research Letters, Vol. 4, No. 8-9, 01.09.2010, p. 191-193.Research output: Contribution to journal › Article
TY - JOUR
T1 - p-polarized infrared attenuated total reflection study of InN thin films grown on Si(111) substrate
AU - Ng, S. S.
AU - Lee, S. C.
AU - Ooi, P. K.
AU - Hassan, Z.
AU - Hassan, H. Abu
AU - Chen, W. L.
PY - 2010/9/1
Y1 - 2010/9/1
N2 - We report for the first time the surface phonon polariton (SPP) and interface phonon polariton (IPP) characteristics of InN thin films grown on AlN buffer layer on Si(111) substrate by molecular beam expitaxy. The p-polarized infrared attenuated total reflection technique was used to excite the SPP and IPP modes of the sample. It was found that the SPP mode of InN and the IPP mode of InN/AlN were clearly observed at 609 cm-1 and 877 cm-1, respectively. The origins of the observed peaks were verified by theoretical simulations based on the anisotropic model. In general, a good agreement between the experimental and theoretical results was obtained. Finally, the effect of the free carriers on the SPP mode is discussed.
AB - We report for the first time the surface phonon polariton (SPP) and interface phonon polariton (IPP) characteristics of InN thin films grown on AlN buffer layer on Si(111) substrate by molecular beam expitaxy. The p-polarized infrared attenuated total reflection technique was used to excite the SPP and IPP modes of the sample. It was found that the SPP mode of InN and the IPP mode of InN/AlN were clearly observed at 609 cm-1 and 877 cm-1, respectively. The origins of the observed peaks were verified by theoretical simulations based on the anisotropic model. In general, a good agreement between the experimental and theoretical results was obtained. Finally, the effect of the free carriers on the SPP mode is discussed.
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U2 - 10.1002/pssr.201004173
DO - 10.1002/pssr.201004173
M3 - Article
AN - SCOPUS:77957029231
VL - 4
SP - 191
EP - 193
JO - Physica Status Solidi - Rapid Research Letters
JF - Physica Status Solidi - Rapid Research Letters
SN - 1862-6254
IS - 8-9
ER -