p-MoS2/n-InSe van der Waals heterojunctions and their applications in all-2D optoelectronic devices

Pan Li, Kai Yuan, Der Yuh Lin, Tingting Wang, Wanying Du, Zhongming Wei, Kenji Watanabe, Takashi Taniguchi, Yu Ye, Lun Dai

Research output: Contribution to journalArticle

Abstract

A library of two-dimensional (2D) semiconductors with different band gaps offers the construction of van der Waals (vdWs) heterostructures with different band alignments, providing a new platform for developing high-performance optoelectronic devices. Here, we demonstrate all-2D optoelectronic devices based on type-II p-MoS2/n-InSe vdWs heterojunctions operating at the near infrared (NIR) wavelength range. The p-n heterojunction diode exhibits a rectification ratio of ∼102 at Vds = ±2 V and a turn-on voltage of ∼0.8 V. Under a forward bias exceeding the turn-on voltage and a proper positive back-gate voltage, the all-2D vdWs heterojunction diode exhibits an electroluminescence with an emission peak centered at ∼1020 nm. Besides, this p-MoS2/n-InSe heterojunction shows a photoresponse at zero external bias, indicating that it can serve as a photodiode working without an external power supply. The as-demonstrated all-2D vdWs heterojunction which can work as both a light-emitting diode and a self-powered photodetector may find applications in flexible wear, display, and optical communication fields, etc.

Original languageEnglish
Pages (from-to)35039-35044
Number of pages6
JournalRSC Advances
Volume9
Issue number60
DOIs
Publication statusPublished - 2019 Jan 1

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Optoelectronic devices
Heterojunctions
Diodes
Electric potential
Electroluminescence
Optical communication
Photodetectors
Photodiodes
Light emitting diodes
Energy gap
Display devices
Wear of materials
Semiconductor materials
Infrared radiation
Wavelength

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Chemical Engineering(all)

Cite this

Li, Pan ; Yuan, Kai ; Lin, Der Yuh ; Wang, Tingting ; Du, Wanying ; Wei, Zhongming ; Watanabe, Kenji ; Taniguchi, Takashi ; Ye, Yu ; Dai, Lun. / p-MoS2/n-InSe van der Waals heterojunctions and their applications in all-2D optoelectronic devices. In: RSC Advances. 2019 ; Vol. 9, No. 60. pp. 35039-35044.
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Li, P, Yuan, K, Lin, DY, Wang, T, Du, W, Wei, Z, Watanabe, K, Taniguchi, T, Ye, Y & Dai, L 2019, 'p-MoS2/n-InSe van der Waals heterojunctions and their applications in all-2D optoelectronic devices', RSC Advances, vol. 9, no. 60, pp. 35039-35044. https://doi.org/10.1039/c9ra06667e

p-MoS2/n-InSe van der Waals heterojunctions and their applications in all-2D optoelectronic devices. / Li, Pan; Yuan, Kai; Lin, Der Yuh; Wang, Tingting; Du, Wanying; Wei, Zhongming; Watanabe, Kenji; Taniguchi, Takashi; Ye, Yu; Dai, Lun.

In: RSC Advances, Vol. 9, No. 60, 01.01.2019, p. 35039-35044.

Research output: Contribution to journalArticle

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AU - Du, Wanying

AU - Wei, Zhongming

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AU - Ye, Yu

AU - Dai, Lun

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