p-MoS2/n-InSe van der Waals heterojunctions and their applications in all-2D optoelectronic devices

Pan Li, Kai Yuan, Der Yuh Lin, Tingting Wang, Wanying Du, Zhongming Wei, Kenji Watanabe, Takashi Taniguchi, Yu Ye, Lun Dai

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Abstract

A library of two-dimensional (2D) semiconductors with different band gaps offers the construction of van der Waals (vdWs) heterostructures with different band alignments, providing a new platform for developing high-performance optoelectronic devices. Here, we demonstrate all-2D optoelectronic devices based on type-II p-MoS2/n-InSe vdWs heterojunctions operating at the near infrared (NIR) wavelength range. The p-n heterojunction diode exhibits a rectification ratio of ∼102 at Vds = ±2 V and a turn-on voltage of ∼0.8 V. Under a forward bias exceeding the turn-on voltage and a proper positive back-gate voltage, the all-2D vdWs heterojunction diode exhibits an electroluminescence with an emission peak centered at ∼1020 nm. Besides, this p-MoS2/n-InSe heterojunction shows a photoresponse at zero external bias, indicating that it can serve as a photodiode working without an external power supply. The as-demonstrated all-2D vdWs heterojunction which can work as both a light-emitting diode and a self-powered photodetector may find applications in flexible wear, display, and optical communication fields, etc.

Original languageEnglish
Pages (from-to)35039-35044
Number of pages6
JournalRSC Advances
Volume9
Issue number60
DOIs
Publication statusPublished - 2019

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Chemical Engineering(all)

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    Li, P., Yuan, K., Lin, D. Y., Wang, T., Du, W., Wei, Z., Watanabe, K., Taniguchi, T., Ye, Y., & Dai, L. (2019). p-MoS2/n-InSe van der Waals heterojunctions and their applications in all-2D optoelectronic devices. RSC Advances, 9(60), 35039-35044. https://doi.org/10.1039/c9ra06667e