Oxygen vacancy and film crystallization effects on resistive switching behaviors of CuAlOxthin films

Yow Jon Lin; Yu Ju Chu

doi:10.1016/j.jallcom.2016.08.269

Oxygen vacancy and film crystallization effects on resistive switching behaviors of CuAlO_xthin films

Yow Jon Lin, Yu Ju Chu

Graduate Institute of Photonics

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The resistive switching characteristics of n-type CuAlO_xthin films fabricated by rf magnetron sputtering under different gas-flow ratios of O₂/Ar were examined in this study. The dependence of resistive switching on the O₂/Ar rate was found. The conduction mechanisms could be described as nearest-neighboring hopping and variable-range hopping conductions. For high or low resistive states (HRS or LRS), the electrical resistance decreases with increasing temperature, indicating semiconducting behavior. The transition from HRS to LRS due to the migration of oxygen vacancies (V_O) is associated with electron hopping mediated through the V_Otrap sites. The findings show the importance of simultaneous control of the number of oxygen vacancies and film crystallinity in achieving optimization of oxide-based memory devices.

Original language	English
Pages (from-to)	263-268
Number of pages	6
Journal	Journal of Alloys and Compounds
Volume	691
DOIs	https://doi.org/10.1016/j.jallcom.2016.08.269
Publication status	Published - 2017

All Science Journal Classification (ASJC) codes

Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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title = "Oxygen vacancy and film crystallization effects on resistive switching behaviors of CuAlOxthin films",

abstract = "The resistive switching characteristics of n-type CuAlOxthin films fabricated by rf magnetron sputtering under different gas-flow ratios of O2/Ar were examined in this study. The dependence of resistive switching on the O2/Ar rate was found. The conduction mechanisms could be described as nearest-neighboring hopping and variable-range hopping conductions. For high or low resistive states (HRS or LRS), the electrical resistance decreases with increasing temperature, indicating semiconducting behavior. The transition from HRS to LRS due to the migration of oxygen vacancies (VO) is associated with electron hopping mediated through the VOtrap sites. The findings show the importance of simultaneous control of the number of oxygen vacancies and film crystallinity in achieving optimization of oxide-based memory devices.",

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year = "2017",

doi = "10.1016/j.jallcom.2016.08.269",

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T1 - Oxygen vacancy and film crystallization effects on resistive switching behaviors of CuAlOxthin films

AU - Lin, Yow Jon

AU - Chu, Yu Ju

PY - 2017

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N2 - The resistive switching characteristics of n-type CuAlOxthin films fabricated by rf magnetron sputtering under different gas-flow ratios of O2/Ar were examined in this study. The dependence of resistive switching on the O2/Ar rate was found. The conduction mechanisms could be described as nearest-neighboring hopping and variable-range hopping conductions. For high or low resistive states (HRS or LRS), the electrical resistance decreases with increasing temperature, indicating semiconducting behavior. The transition from HRS to LRS due to the migration of oxygen vacancies (VO) is associated with electron hopping mediated through the VOtrap sites. The findings show the importance of simultaneous control of the number of oxygen vacancies and film crystallinity in achieving optimization of oxide-based memory devices.

AB - The resistive switching characteristics of n-type CuAlOxthin films fabricated by rf magnetron sputtering under different gas-flow ratios of O2/Ar were examined in this study. The dependence of resistive switching on the O2/Ar rate was found. The conduction mechanisms could be described as nearest-neighboring hopping and variable-range hopping conductions. For high or low resistive states (HRS or LRS), the electrical resistance decreases with increasing temperature, indicating semiconducting behavior. The transition from HRS to LRS due to the migration of oxygen vacancies (VO) is associated with electron hopping mediated through the VOtrap sites. The findings show the importance of simultaneous control of the number of oxygen vacancies and film crystallinity in achieving optimization of oxide-based memory devices.

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