The resistive switching characteristics of n-type CuAlOxthin films fabricated by rf magnetron sputtering under different gas-flow ratios of O2/Ar were examined in this study. The dependence of resistive switching on the O2/Ar rate was found. The conduction mechanisms could be described as nearest-neighboring hopping and variable-range hopping conductions. For high or low resistive states (HRS or LRS), the electrical resistance decreases with increasing temperature, indicating semiconducting behavior. The transition from HRS to LRS due to the migration of oxygen vacancies (VO) is associated with electron hopping mediated through the VOtrap sites. The findings show the importance of simultaneous control of the number of oxygen vacancies and film crystallinity in achieving optimization of oxide-based memory devices.
All Science Journal Classification (ASJC) codes
- Mechanics of Materials
- Mechanical Engineering
- Metals and Alloys
- Materials Chemistry