Abstract
The resistive switching characteristics of n-type CuAlOxthin films fabricated by rf magnetron sputtering under different gas-flow ratios of O2/Ar were examined in this study. The dependence of resistive switching on the O2/Ar rate was found. The conduction mechanisms could be described as nearest-neighboring hopping and variable-range hopping conductions. For high or low resistive states (HRS or LRS), the electrical resistance decreases with increasing temperature, indicating semiconducting behavior. The transition from HRS to LRS due to the migration of oxygen vacancies (VO) is associated with electron hopping mediated through the VOtrap sites. The findings show the importance of simultaneous control of the number of oxygen vacancies and film crystallinity in achieving optimization of oxide-based memory devices.
| Original language | English |
|---|---|
| Pages (from-to) | 263-268 |
| Number of pages | 6 |
| Journal | Journal of Alloys and Compounds |
| Volume | 691 |
| DOIs | |
| Publication status | Published - 2017 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Mechanics of Materials
- Mechanical Engineering
- Metals and Alloys
- Materials Chemistry
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Oxygen vacancy and film crystallization effects on resistive switching behaviors of CuAlOxthin films. / Lin, Yow-Jon; Chu, Yu Ju.
In: Journal of Alloys and Compounds, Vol. 691, 01.01.2017, p. 263-268.Research output: Contribution to journal › Article
TY - JOUR
T1 - Oxygen vacancy and film crystallization effects on resistive switching behaviors of CuAlOxthin films
AU - Lin, Yow-Jon
AU - Chu, Yu Ju
PY - 2017/1/1
Y1 - 2017/1/1
N2 - The resistive switching characteristics of n-type CuAlOxthin films fabricated by rf magnetron sputtering under different gas-flow ratios of O2/Ar were examined in this study. The dependence of resistive switching on the O2/Ar rate was found. The conduction mechanisms could be described as nearest-neighboring hopping and variable-range hopping conductions. For high or low resistive states (HRS or LRS), the electrical resistance decreases with increasing temperature, indicating semiconducting behavior. The transition from HRS to LRS due to the migration of oxygen vacancies (VO) is associated with electron hopping mediated through the VOtrap sites. The findings show the importance of simultaneous control of the number of oxygen vacancies and film crystallinity in achieving optimization of oxide-based memory devices.
AB - The resistive switching characteristics of n-type CuAlOxthin films fabricated by rf magnetron sputtering under different gas-flow ratios of O2/Ar were examined in this study. The dependence of resistive switching on the O2/Ar rate was found. The conduction mechanisms could be described as nearest-neighboring hopping and variable-range hopping conductions. For high or low resistive states (HRS or LRS), the electrical resistance decreases with increasing temperature, indicating semiconducting behavior. The transition from HRS to LRS due to the migration of oxygen vacancies (VO) is associated with electron hopping mediated through the VOtrap sites. The findings show the importance of simultaneous control of the number of oxygen vacancies and film crystallinity in achieving optimization of oxide-based memory devices.
UR - http://www.scopus.com/inward/record.url?scp=84992028370&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84992028370&partnerID=8YFLogxK
U2 - 10.1016/j.jallcom.2016.08.269
DO - 10.1016/j.jallcom.2016.08.269
M3 - Article
AN - SCOPUS:84992028370
VL - 691
SP - 263
EP - 268
JO - Journal of Alloys and Compounds
JF - Journal of Alloys and Compounds
SN - 0925-8388
ER -