Output power enhancement of light-emitting diodes via two-dimensional hole arrays generated by a monolayer of microspheres

Chia Hung Hou, Shao Ze Tseng, Chia Hua Chan, Tsing Jen Chen, Hung Ta Chien, Fu Li Hsiao, Hua Kung Chiu, Chien Chieh Lee, Yen Ling Tsai, Chii Chang Chen

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

The output power enhancement of the GaN-based light-emitting diodes (LEDs) featuring two-dimensional (2D) hole arrays is demonstrated. The 2D air hole arrays were first generated in the photoresist by utilizing the focusing nature of microspheres, and then transferred onto the GaN surface through dry etching. The maximum output power of the surface-textured LEDs was enhanced by 45% compared with the LEDs without surface texturing. The finite-difference time-domain calculation was performed and revealed that the light extraction efficiency of the textured LEDs increased with increasing etching depth.

Original languageEnglish
Article number133105
JournalApplied Physics Letters
Volume95
Issue number13
DOIs
Publication statusPublished - 2009 Oct 12

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Hou, C. H., Tseng, S. Z., Chan, C. H., Chen, T. J., Chien, H. T., Hsiao, F. L., Chiu, H. K., Lee, C. C., Tsai, Y. L., & Chen, C. C. (2009). Output power enhancement of light-emitting diodes via two-dimensional hole arrays generated by a monolayer of microspheres. Applied Physics Letters, 95(13), [133105]. https://doi.org/10.1063/1.3238360