The temperature dependence of the series resistance (RS), ideality factor (η), and barrier height (Φb) for n-type GaN Schottky diodes were studied. From the observed Hall-effect result, it is suggested that the increase of RS with increasing temperature may result from a decrease in electron mobility with increasing temperature and the increase in the effective density of states in the conduction band with increasing temperature may lead to an increase in the energy difference between the conduction band minimum and the Fermi level and a decrease in the probability of tunneling. It is shown that the tunneling behavior is responsible for decreasing Φb and increasing η with decreasing temperature on the basis of the thermionic emission model.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry