Origin of the Enhancement of Negative Differential Resistance at Low Temperatures in Double-Barrier Resonant Tunneling Structures

Jenq-Shinn Wu; Chun Yen Chang; Chien Ping Lee; Yeong Her Wang; F. Kai

doi:10.1109/55.29659

Origin of the Enhancement of Negative Differential Resistance at Low Temperatures in Double-Barrier Resonant Tunneling Structures

Jenq-Shinn Wu, Chun Yen Chang, Chien Ping Lee, Yeong Her Wang, F. Kai

Department of Electronic Engineering

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

An explanation of the increased peak-to-valley (PTV) current ratio for double-barrier resonant tunneling structures (DBRTS’s) operated at low temperatures is proposed. We found that this phenomenon is an inherent property of DBRTS’s, not caused by the suppression of thermionic current over barriers. The energy distributions of electrons at different temperatures result in the variations of peak and valley currents.

Original language	English
Pages (from-to)	301-303
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	10
Issue number	7
DOIs	https://doi.org/10.1109/55.29659
Publication status	Published - 1989 Jan 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/55.29659

Fingerprint Dive into the research topics of 'Origin of the Enhancement of Negative Differential Resistance at Low Temperatures in Double-Barrier Resonant Tunneling Structures'. Together they form a unique fingerprint.

Cite this

@article{2474a29ddf2449c1a4ef5e50a5c6cd37,

title = "Origin of the Enhancement of Negative Differential Resistance at Low Temperatures in Double-Barrier Resonant Tunneling Structures",

abstract = "An explanation of the increased peak-to-valley (PTV) current ratio for double-barrier resonant tunneling structures (DBRTS{\textquoteright}s) operated at low temperatures is proposed. We found that this phenomenon is an inherent property of DBRTS{\textquoteright}s, not caused by the suppression of thermionic current over barriers. The energy distributions of electrons at different temperatures result in the variations of peak and valley currents.",

author = "Jenq-Shinn Wu and Chang, {Chun Yen} and Lee, {Chien Ping} and Wang, {Yeong Her} and F. Kai",

year = "1989",

month = jan,

day = "1",

doi = "10.1109/55.29659",

language = "English",

volume = "10",

pages = "301--303",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "7",

}

TY - JOUR

T1 - Origin of the Enhancement of Negative Differential Resistance at Low Temperatures in Double-Barrier Resonant Tunneling Structures

AU - Wu, Jenq-Shinn

AU - Chang, Chun Yen

AU - Lee, Chien Ping

AU - Wang, Yeong Her

AU - Kai, F.

PY - 1989/1/1

Y1 - 1989/1/1

N2 - An explanation of the increased peak-to-valley (PTV) current ratio for double-barrier resonant tunneling structures (DBRTS’s) operated at low temperatures is proposed. We found that this phenomenon is an inherent property of DBRTS’s, not caused by the suppression of thermionic current over barriers. The energy distributions of electrons at different temperatures result in the variations of peak and valley currents.

AB - An explanation of the increased peak-to-valley (PTV) current ratio for double-barrier resonant tunneling structures (DBRTS’s) operated at low temperatures is proposed. We found that this phenomenon is an inherent property of DBRTS’s, not caused by the suppression of thermionic current over barriers. The energy distributions of electrons at different temperatures result in the variations of peak and valley currents.

UR - http://www.scopus.com/inward/record.url?scp=0024700460&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024700460&partnerID=8YFLogxK

U2 - 10.1109/55.29659

DO - 10.1109/55.29659

M3 - Article

AN - SCOPUS:0024700460

VL - 10

SP - 301

EP - 303

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 7

ER -