Origin of the Enhancement of Negative Differential Resistance at Low Temperatures in Double-Barrier Resonant Tunneling Structures

Jenq-Shinn Wu; Chun Yen Chang; Chien Ping Lee; Yeong Her Wang; F. Kai

doi:10.1109/55.29659

Origin of the Enhancement of Negative Differential Resistance at Low Temperatures in Double-Barrier Resonant Tunneling Structures

Jenq-Shinn Wu, Chun Yen Chang, Chien Ping Lee, Yeong Her Wang, F. Kai

Department of Electronic Engineering

Research output: Contribution to journal › Article

15 Citations (Scopus)

Abstract

An explanation of the increased peak-to-valley (PTV) current ratio for double-barrier resonant tunneling structures (DBRTS’s) operated at low temperatures is proposed. We found that this phenomenon is an inherent property of DBRTS’s, not caused by the suppression of thermionic current over barriers. The energy distributions of electrons at different temperatures result in the variations of peak and valley currents.

Original language	English
Pages (from-to)	301-303
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	10
Issue number	7
DOIs	https://doi.org/10.1109/55.29659
Publication status	Published - 1989 Jan 1

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All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

Wu, J-S., Chang, C. Y., Lee, C. P., Wang, Y. H., & Kai, F. (1989). Origin of the Enhancement of Negative Differential Resistance at Low Temperatures in Double-Barrier Resonant Tunneling Structures. IEEE Electron Device Letters, 10(7), 301-303. https://doi.org/10.1109/55.29659

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10.1109/55.29659