Abstract
An explanation of the increased peak-to-valley (PTV) current ratio for double-barrier resonant tunneling structures (DBRTS’s) operated at low temperatures is proposed. We found that this phenomenon is an inherent property of DBRTS’s, not caused by the suppression of thermionic current over barriers. The energy distributions of electrons at different temperatures result in the variations of peak and valley currents.
| Original language | English |
|---|---|
| Pages (from-to) | 301-303 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 10 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 1989 Jan 1 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
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Wu, J-S., Chang, C. Y., Lee, C. P., Wang, Y. H., & Kai, F. (1989). Origin of the Enhancement of Negative Differential Resistance at Low Temperatures in Double-Barrier Resonant Tunneling Structures. IEEE Electron Device Letters, 10(7), 301-303. https://doi.org/10.1109/55.29659