Optoelectric Properties of GaInP p-i-n Solar Cells with Different i-Layer Thicknesses

Tsung Shine Ko, Der Yuh Lin, You Chi He, Chen Chia Kao, Bo Yuan Hu, Ray Hua Horng, Fan Lei Wu, Chih Hung Wu, Yu Li Tsai

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Abstract

The optoelectric properties of GaInP p-i-n solar cells with different intrinsic layer (i-layer) thicknesses from 0.25 to 1 m were studied. Both emission intensity and full width at half maximum features of the photoluminescence spectrum indicate that the optimum i-layer thickness would be between 0.5 and 0.75 m. The integrated current results of photocurrent experiment also point out that the samples with 0.5 to 0.75 m i-layer thicknesses have optimum value around 156 nA. Electroreflectance measurements reveal that the built-in electric field strength of the sample gradually deviates from the theoretical value larger when i-layer thickness of the sample is thicker than 0.75 m. I-V measurements also confirm crystal quality for whole samples by obtaining the information about short currents of photovoltaic performances. A series of experiments reflect that thicker i-layer structure would induce more defects generation lowering crystal quality.

Original languageEnglish
Article number703045
JournalInternational Journal of Photoenergy
Volume2015
DOIs
Publication statusPublished - 2015 Jan 1

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All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Atomic and Molecular Physics, and Optics
  • Renewable Energy, Sustainability and the Environment
  • Materials Science(all)

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