Abstract
The optoelectric properties of GaInP p-i-n solar cells with different intrinsic layer (i-layer) thicknesses from 0.25 to 1 m were studied. Both emission intensity and full width at half maximum features of the photoluminescence spectrum indicate that the optimum i-layer thickness would be between 0.5 and 0.75 m. The integrated current results of photocurrent experiment also point out that the samples with 0.5 to 0.75 m i-layer thicknesses have optimum value around 156 nA. Electroreflectance measurements reveal that the built-in electric field strength of the sample gradually deviates from the theoretical value larger when i-layer thickness of the sample is thicker than 0.75 m. I-V measurements also confirm crystal quality for whole samples by obtaining the information about short currents of photovoltaic performances. A series of experiments reflect that thicker i-layer structure would induce more defects generation lowering crystal quality.
| Original language | English |
|---|---|
| Article number | 703045 |
| Journal | International Journal of Photoenergy |
| Volume | 2015 |
| DOIs | |
| Publication status | Published - 2015 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Atomic and Molecular Physics, and Optics
- Renewable Energy, Sustainability and the Environment
- Materials Science(all)
Cite this
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Optoelectric Properties of GaInP p-i-n Solar Cells with Different i-Layer Thicknesses. / Ko, Tsung Shine; Lin, Der Yuh; He, You Chi; Kao, Chen Chia; Hu, Bo Yuan; Horng, Ray Hua; Wu, Fan Lei; Wu, Chih Hung; Tsai, Yu Li.
In: International Journal of Photoenergy, Vol. 2015, 703045, 01.01.2015.Research output: Contribution to journal › Article
TY - JOUR
T1 - Optoelectric Properties of GaInP p-i-n Solar Cells with Different i-Layer Thicknesses
AU - Ko, Tsung Shine
AU - Lin, Der Yuh
AU - He, You Chi
AU - Kao, Chen Chia
AU - Hu, Bo Yuan
AU - Horng, Ray Hua
AU - Wu, Fan Lei
AU - Wu, Chih Hung
AU - Tsai, Yu Li
PY - 2015/1/1
Y1 - 2015/1/1
N2 - The optoelectric properties of GaInP p-i-n solar cells with different intrinsic layer (i-layer) thicknesses from 0.25 to 1 m were studied. Both emission intensity and full width at half maximum features of the photoluminescence spectrum indicate that the optimum i-layer thickness would be between 0.5 and 0.75 m. The integrated current results of photocurrent experiment also point out that the samples with 0.5 to 0.75 m i-layer thicknesses have optimum value around 156 nA. Electroreflectance measurements reveal that the built-in electric field strength of the sample gradually deviates from the theoretical value larger when i-layer thickness of the sample is thicker than 0.75 m. I-V measurements also confirm crystal quality for whole samples by obtaining the information about short currents of photovoltaic performances. A series of experiments reflect that thicker i-layer structure would induce more defects generation lowering crystal quality.
AB - The optoelectric properties of GaInP p-i-n solar cells with different intrinsic layer (i-layer) thicknesses from 0.25 to 1 m were studied. Both emission intensity and full width at half maximum features of the photoluminescence spectrum indicate that the optimum i-layer thickness would be between 0.5 and 0.75 m. The integrated current results of photocurrent experiment also point out that the samples with 0.5 to 0.75 m i-layer thicknesses have optimum value around 156 nA. Electroreflectance measurements reveal that the built-in electric field strength of the sample gradually deviates from the theoretical value larger when i-layer thickness of the sample is thicker than 0.75 m. I-V measurements also confirm crystal quality for whole samples by obtaining the information about short currents of photovoltaic performances. A series of experiments reflect that thicker i-layer structure would induce more defects generation lowering crystal quality.
UR - http://www.scopus.com/inward/record.url?scp=84934300496&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84934300496&partnerID=8YFLogxK
U2 - 10.1155/2015/703045
DO - 10.1155/2015/703045
M3 - Article
AN - SCOPUS:84934300496
VL - 2015
JO - International Journal of Photoenergy
JF - International Journal of Photoenergy
SN - 1110-662X
M1 - 703045
ER -