Optoelectric Properties of GaInP p-i-n Solar Cells with Different i-Layer Thicknesses

Tsung-Shine Ko, Der-Yuh Lin, You Chi He, Chen Chia Kao, Bo Yuan Hu, Ray Hua Horng, Fan Lei Wu, Chih Hung Wu, Yu Li Tsai

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The optoelectric properties of GaInP p-i-n solar cells with different intrinsic layer (i-layer) thicknesses from 0.25 to 1 m were studied. Both emission intensity and full width at half maximum features of the photoluminescence spectrum indicate that the optimum i-layer thickness would be between 0.5 and 0.75 m. The integrated current results of photocurrent experiment also point out that the samples with 0.5 to 0.75 m i-layer thicknesses have optimum value around 156 nA. Electroreflectance measurements reveal that the built-in electric field strength of the sample gradually deviates from the theoretical value larger when i-layer thickness of the sample is thicker than 0.75 m. I-V measurements also confirm crystal quality for whole samples by obtaining the information about short currents of photovoltaic performances. A series of experiments reflect that thicker i-layer structure would induce more defects generation lowering crystal quality.

Original languageEnglish
Article number703045
JournalInternational Journal of Photoenergy
Volume2015
DOIs
Publication statusPublished - 2015 Jan 1

Fingerprint

Solar cells
solar cells
Crystals
Full width at half maximum
Photocurrents
Photoluminescence
Experiments
Electric fields
Defects
electric field strength
crystals
photocurrents
photoluminescence
defects

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Atomic and Molecular Physics, and Optics
  • Renewable Energy, Sustainability and the Environment
  • Materials Science(all)

Cite this

Ko, Tsung-Shine ; Lin, Der-Yuh ; He, You Chi ; Kao, Chen Chia ; Hu, Bo Yuan ; Horng, Ray Hua ; Wu, Fan Lei ; Wu, Chih Hung ; Tsai, Yu Li. / Optoelectric Properties of GaInP p-i-n Solar Cells with Different i-Layer Thicknesses. In: International Journal of Photoenergy. 2015 ; Vol. 2015.
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abstract = "The optoelectric properties of GaInP p-i-n solar cells with different intrinsic layer (i-layer) thicknesses from 0.25 to 1 m were studied. Both emission intensity and full width at half maximum features of the photoluminescence spectrum indicate that the optimum i-layer thickness would be between 0.5 and 0.75 m. The integrated current results of photocurrent experiment also point out that the samples with 0.5 to 0.75 m i-layer thicknesses have optimum value around 156 nA. Electroreflectance measurements reveal that the built-in electric field strength of the sample gradually deviates from the theoretical value larger when i-layer thickness of the sample is thicker than 0.75 m. I-V measurements also confirm crystal quality for whole samples by obtaining the information about short currents of photovoltaic performances. A series of experiments reflect that thicker i-layer structure would induce more defects generation lowering crystal quality.",
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Optoelectric Properties of GaInP p-i-n Solar Cells with Different i-Layer Thicknesses. / Ko, Tsung-Shine; Lin, Der-Yuh; He, You Chi; Kao, Chen Chia; Hu, Bo Yuan; Horng, Ray Hua; Wu, Fan Lei; Wu, Chih Hung; Tsai, Yu Li.

In: International Journal of Photoenergy, Vol. 2015, 703045, 01.01.2015.

Research output: Contribution to journalArticle

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AU - Horng, Ray Hua

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