TY - GEN
T1 - Optimization study on active layers and optical performance for 1.3-μm AIGaInAs and InGaNAs semiconductor lasers
AU - Kuo, Yen-Kuang
AU - Yen, Sheng Horng
AU - Yao, Ming Wei
PY - 2006/5/22
Y1 - 2006/5/22
N2 - The 1.3-μm semiconductor material systems are numerically studied with a LASTIP simulation program. The optimum active layer materials of AlGaInAs/InP and InGaNAs/GaAs system are suggested. For the AlGaInAs/InP system, we optimize the structure by varying the number of quantum wells, the linear GRINSCH, and the compensated tensile strain in barriers. The optimized active structure possesses four quantum wells, linear GRINSCH, and a compensated tensile strain in the barrier of 0.325% at an emission wavelength of 1.3 μm. The characteristic temperature can be improved to 99.4K, 51.0K, and 68.6K as it is operating among 288K-318K, 318K-348K, and 288K-348K respectively. Furthermore, the optimized structure can also enhance the stimulated recombination rate and reduce the Auger recombination rate because of the compensated tensile strain in barriers. The simulation results show that the active layer with a certain amount of compensated tensile strain in barriers is beneficial for improving the laser performance. On the other hand, the performance of the InGaNAs/GaAs lasers with quantum wells of different compressive strains is investigated. The wavelength of InGaNAs/GaAs system is about 1.3 μm if the Ga composition in quantum wells is 0.54. The results of numerical simulation suggest that the stimulated recombination rate is larger and the Auger recombination rate is smaller when the Ga composition in quantum well is 0.50.
AB - The 1.3-μm semiconductor material systems are numerically studied with a LASTIP simulation program. The optimum active layer materials of AlGaInAs/InP and InGaNAs/GaAs system are suggested. For the AlGaInAs/InP system, we optimize the structure by varying the number of quantum wells, the linear GRINSCH, and the compensated tensile strain in barriers. The optimized active structure possesses four quantum wells, linear GRINSCH, and a compensated tensile strain in the barrier of 0.325% at an emission wavelength of 1.3 μm. The characteristic temperature can be improved to 99.4K, 51.0K, and 68.6K as it is operating among 288K-318K, 318K-348K, and 288K-348K respectively. Furthermore, the optimized structure can also enhance the stimulated recombination rate and reduce the Auger recombination rate because of the compensated tensile strain in barriers. The simulation results show that the active layer with a certain amount of compensated tensile strain in barriers is beneficial for improving the laser performance. On the other hand, the performance of the InGaNAs/GaAs lasers with quantum wells of different compressive strains is investigated. The wavelength of InGaNAs/GaAs system is about 1.3 μm if the Ga composition in quantum wells is 0.54. The results of numerical simulation suggest that the stimulated recombination rate is larger and the Auger recombination rate is smaller when the Ga composition in quantum well is 0.50.
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U2 - 10.1117/12.645196
DO - 10.1117/12.645196
M3 - Conference contribution
AN - SCOPUS:33646569670
SN - 0819461571
SN - 9780819461575
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Physics and Simulation of Optoelectronic Devices XIV
T2 - Physics and Simulation of Optoelectronic Devices XIV
Y2 - 22 January 2006 through 26 January 2006
ER -