Optimization study on active layers and optical performance for 1.3-μm AIGaInAs and InGaNAs semiconductor lasers

Yen-Kuang Kuo, Sheng Horng Yen, Ming Wei Yao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The 1.3-μm semiconductor material systems are numerically studied with a LASTIP simulation program. The optimum active layer materials of AlGaInAs/InP and InGaNAs/GaAs system are suggested. For the AlGaInAs/InP system, we optimize the structure by varying the number of quantum wells, the linear GRINSCH, and the compensated tensile strain in barriers. The optimized active structure possesses four quantum wells, linear GRINSCH, and a compensated tensile strain in the barrier of 0.325% at an emission wavelength of 1.3 μm. The characteristic temperature can be improved to 99.4K, 51.0K, and 68.6K as it is operating among 288K-318K, 318K-348K, and 288K-348K respectively. Furthermore, the optimized structure can also enhance the stimulated recombination rate and reduce the Auger recombination rate because of the compensated tensile strain in barriers. The simulation results show that the active layer with a certain amount of compensated tensile strain in barriers is beneficial for improving the laser performance. On the other hand, the performance of the InGaNAs/GaAs lasers with quantum wells of different compressive strains is investigated. The wavelength of InGaNAs/GaAs system is about 1.3 μm if the Ga composition in quantum wells is 0.54. The results of numerical simulation suggest that the stimulated recombination rate is larger and the Auger recombination rate is smaller when the Ga composition in quantum well is 0.50.

Original languageEnglish
Title of host publicationPhysics and Simulation of Optoelectronic Devices XIV
DOIs
Publication statusPublished - 2006 May 22
EventPhysics and Simulation of Optoelectronic Devices XIV - San Jose, CA, United States
Duration: 2006 Jan 222006 Jan 26

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6115
ISSN (Print)0277-786X

Other

OtherPhysics and Simulation of Optoelectronic Devices XIV
CountryUnited States
CitySan Jose, CA
Period06-01-2206-01-26

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Kuo, Y-K., Yen, S. H., & Yao, M. W. (2006). Optimization study on active layers and optical performance for 1.3-μm AIGaInAs and InGaNAs semiconductor lasers. In Physics and Simulation of Optoelectronic Devices XIV [611526] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6115). https://doi.org/10.1117/12.645196