Optimization of oxide-confinement and active layers for high-speed 850-nm VCSELs

Yen-Kuang Kuo, Jun Rong Chen, Ming Yung Jow, Cheng Zu Wu, Bao Jen Pong, Chii Chang Chen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Vertical-cavity surface-emitting lasers with variant compressively strained InGaAlAs quantum wells have been investigated. The valence band structures, optical gain spectra, and threshold properties of InGaAlAs/AlGaAs quantum wells are compared and analyzed. The simulation results indicate that the characteristics of InGaAlAs quantum wells can be improved by increasing the amount of compressive strain in quantum well. Furthermore, the properties of VCSELs with these compressively strained InGaAlAs quantum welk are studied numerically. The results of numerical calculations show that the threshold current and maximum output power can be enhanced by using higher compressively strained InGaAlAs quantum well. However, when the compressive strain is larger than about 1.5%, further improvement of the laser performance becomes minimal. The effects of the position and aperture size of the oxide-confinement layers on the laser performance are also investigated. Variation of the oxide layer design is shown to affect the current distribution which makes the temperature in the active region different. It is the main reason for the power roll-off in the VCSEL devices.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
DOIs
Publication statusPublished - 2006 May 8
EventVertical-Cavity Surface-Emitting Lasers X - San Jose, CA, United States
Duration: 2006 Jan 252006 Jan 26

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6132
ISSN (Print)0277-786X

Other

OtherVertical-Cavity Surface-Emitting Lasers X
CountryUnited States
CitySan Jose, CA
Period06-01-2506-01-26

Fingerprint

Vertical-cavity Surface-emitting Laser (VCSEL)
Surface emitting lasers
Quantum Well
Oxides
Semiconductor quantum wells
High Speed
high speed
quantum wells
optimization
oxides
Optimization
Laser
Optical gain
Lasers
Band Structure
current distribution
Valence bands
surface emitting lasers
threshold currents
Band structure

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Kuo, Y-K., Chen, J. R., Jow, M. Y., Wu, C. Z., Pong, B. J., & Chen, C. C. (2006). Optimization of oxide-confinement and active layers for high-speed 850-nm VCSELs. In Proceedings of SPIE - The International Society for Optical Engineering [61320M] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6132). https://doi.org/10.1117/12.645405
Kuo, Yen-Kuang ; Chen, Jun Rong ; Jow, Ming Yung ; Wu, Cheng Zu ; Pong, Bao Jen ; Chen, Chii Chang. / Optimization of oxide-confinement and active layers for high-speed 850-nm VCSELs. Proceedings of SPIE - The International Society for Optical Engineering. 2006. (Proceedings of SPIE - The International Society for Optical Engineering).
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abstract = "Vertical-cavity surface-emitting lasers with variant compressively strained InGaAlAs quantum wells have been investigated. The valence band structures, optical gain spectra, and threshold properties of InGaAlAs/AlGaAs quantum wells are compared and analyzed. The simulation results indicate that the characteristics of InGaAlAs quantum wells can be improved by increasing the amount of compressive strain in quantum well. Furthermore, the properties of VCSELs with these compressively strained InGaAlAs quantum welk are studied numerically. The results of numerical calculations show that the threshold current and maximum output power can be enhanced by using higher compressively strained InGaAlAs quantum well. However, when the compressive strain is larger than about 1.5{\%}, further improvement of the laser performance becomes minimal. The effects of the position and aperture size of the oxide-confinement layers on the laser performance are also investigated. Variation of the oxide layer design is shown to affect the current distribution which makes the temperature in the active region different. It is the main reason for the power roll-off in the VCSEL devices.",
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Kuo, Y-K, Chen, JR, Jow, MY, Wu, CZ, Pong, BJ & Chen, CC 2006, Optimization of oxide-confinement and active layers for high-speed 850-nm VCSELs. in Proceedings of SPIE - The International Society for Optical Engineering., 61320M, Proceedings of SPIE - The International Society for Optical Engineering, vol. 6132, Vertical-Cavity Surface-Emitting Lasers X, San Jose, CA, United States, 06-01-25. https://doi.org/10.1117/12.645405

Optimization of oxide-confinement and active layers for high-speed 850-nm VCSELs. / Kuo, Yen-Kuang; Chen, Jun Rong; Jow, Ming Yung; Wu, Cheng Zu; Pong, Bao Jen; Chen, Chii Chang.

Proceedings of SPIE - The International Society for Optical Engineering. 2006. 61320M (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6132).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Kuo Y-K, Chen JR, Jow MY, Wu CZ, Pong BJ, Chen CC. Optimization of oxide-confinement and active layers for high-speed 850-nm VCSELs. In Proceedings of SPIE - The International Society for Optical Engineering. 2006. 61320M. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.645405