Optimization of barrier structure for strain-compensated multiple-quantum-well AlGaInP laser diodes

Man Fang Huang, Yu Lung Sun

Research output: Contribution to journalArticle

Abstract

A theoretical analysis of a strain-compensated multiple-quantum-well (MQW) AlGaInP laser diode (LD) has been conducted to minimize the operation current and enhance the operation temperature. The effect of the barrier height on the tensile-strain quantum barriers was studied under the same optical confinement and emission wavelength. The simulation results suggest that a more uniform and higher carrier distribution inside the MQW region can be obtained for a lower barrier height owing to the improvement in carrier injection. The performance of the AlGaInP LD is thus improved. However, when the barrier height is too small, higher spontaneous rates in the quantum barrier region deteriorate the LD performance instead. Theoretical analysis shows that an Al composition of 0.1 for the 0.5%-tensile-strain AlxGayIni1-x-yP barrier is the optimal value for straincompensated MQW AlGaInP LDs.

Original languageEnglish
Pages (from-to)7600-7604
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number10 A
DOIs
Publication statusPublished - 2006 Oct 15

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Quantum well lasers
quantum well lasers
Semiconductor quantum wells
Semiconductor lasers
Tensile strain
semiconductor lasers
optimization
quantum wells
Wavelength
carrier injection
Chemical analysis
Temperature
wavelengths
simulation

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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title = "Optimization of barrier structure for strain-compensated multiple-quantum-well AlGaInP laser diodes",
abstract = "A theoretical analysis of a strain-compensated multiple-quantum-well (MQW) AlGaInP laser diode (LD) has been conducted to minimize the operation current and enhance the operation temperature. The effect of the barrier height on the tensile-strain quantum barriers was studied under the same optical confinement and emission wavelength. The simulation results suggest that a more uniform and higher carrier distribution inside the MQW region can be obtained for a lower barrier height owing to the improvement in carrier injection. The performance of the AlGaInP LD is thus improved. However, when the barrier height is too small, higher spontaneous rates in the quantum barrier region deteriorate the LD performance instead. Theoretical analysis shows that an Al composition of 0.1 for the 0.5{\%}-tensile-strain AlxGayIni1-x-yP barrier is the optimal value for straincompensated MQW AlGaInP LDs.",
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