Optimization of active layer structures to minimize leakage current for an AlGaInP laser diode

Man-Fang Huang, M. L. Tsai, J. Y. Shin, Y. L. Sun, R. M. Yang, Yen-Kuang Kuo

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Theoretical analysis for different active layer structures under the same waveguide confinement is conducted to minimize the electron overflow from the active layer to the p-cladding layer for the AlGaInP laser diode. An active layer with five quantum wells and a (AlxGa1-x)InP barrier with an x composition of 0.5 has found to be the optimal structure for the AlGaInP laser diode suitable for DVD-ROM and DVD player. Experimental results have confirmed that the characteristic temperature can be as high as 110 K at far field angles of 29°/9° for this optimized AlGaInP laser diode.

Original languageEnglish
Pages (from-to)1369-1373
Number of pages5
JournalApplied Physics A: Materials Science and Processing
Volume81
Issue number7
DOIs
Publication statusPublished - 2005 Nov 1

Fingerprint

Leakage currents
Semiconductor lasers
Videodisks
ROM
Semiconductor quantum wells
Waveguides
Electrons
Chemical analysis
Temperature

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)

Cite this

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title = "Optimization of active layer structures to minimize leakage current for an AlGaInP laser diode",
abstract = "Theoretical analysis for different active layer structures under the same waveguide confinement is conducted to minimize the electron overflow from the active layer to the p-cladding layer for the AlGaInP laser diode. An active layer with five quantum wells and a (AlxGa1-x)InP barrier with an x composition of 0.5 has found to be the optimal structure for the AlGaInP laser diode suitable for DVD-ROM and DVD player. Experimental results have confirmed that the characteristic temperature can be as high as 110 K at far field angles of 29°/9° for this optimized AlGaInP laser diode.",
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Optimization of active layer structures to minimize leakage current for an AlGaInP laser diode. / Huang, Man-Fang; Tsai, M. L.; Shin, J. Y.; Sun, Y. L.; Yang, R. M.; Kuo, Yen-Kuang.

In: Applied Physics A: Materials Science and Processing, Vol. 81, No. 7, 01.11.2005, p. 1369-1373.

Research output: Contribution to journalArticle

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AU - Huang, Man-Fang

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AU - Kuo, Yen-Kuang

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AB - Theoretical analysis for different active layer structures under the same waveguide confinement is conducted to minimize the electron overflow from the active layer to the p-cladding layer for the AlGaInP laser diode. An active layer with five quantum wells and a (AlxGa1-x)InP barrier with an x composition of 0.5 has found to be the optimal structure for the AlGaInP laser diode suitable for DVD-ROM and DVD player. Experimental results have confirmed that the characteristic temperature can be as high as 110 K at far field angles of 29°/9° for this optimized AlGaInP laser diode.

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