Theoretical analysis for different active layer structures under the same waveguide confinement is conducted to minimize the electron overflow from the active layer to the p-cladding layer for the AlGaInP laser diode. An active layer with five quantum wells and a (AlxGa1-x)InP barrier with an x composition of 0.5 has found to be the optimal structure for the AlGaInP laser diode suitable for DVD-ROM and DVD player. Experimental results have confirmed that the characteristic temperature can be as high as 110 K at far field angles of 29°/9° for this optimized AlGaInP laser diode.
|Number of pages||5|
|Journal||Applied Physics A: Materials Science and Processing|
|Publication status||Published - 2005 Nov 1|
All Science Journal Classification (ASJC) codes
- Materials Science(all)