Optical study of a -plane InGaN/GaN multiple quantum wells with different well widths grown by metal-organic chemical vapor deposition

T. S. Ko, T. C. Lu, T. C. Wang, J. R. Chen, R. C. Gao, M. H. Lo, H. C. Kuo, S. C. Wang, J. L. Shen

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

a -plane InGaN/GaN multiple quantum wells of different widths ranging from 3 to 12 nm grown on r -plane sapphire by metal-organic chemical vapor deposition were investigated. The peak emission intensity of the photoluminescence (PL) reveals a decreasing trend as the well width increases from 3 to 12 nm. Low temperature (9 K) time-resolved PL (TRPL) study shows that the sample with 3-nm-thick wells has the best optical property with a fastest exciton decay time of 0.57 ns. The results of cathodoluminescence and micro-PL scanning images for samples of different well widths further verify that the more uniform and stronger luminescence intensity distribution are observed for the samples of thinner quantum wells. In addition, more effective capturing of excitons due to larger localization energy Eloc and shorter radiative lifetime of localized excitons are observed in thinner well width samples in the temperature dependent TRPL.

Original languageEnglish
Article number093106
JournalJournal of Applied Physics
Volume104
Issue number9
DOIs
Publication statusPublished - 2008 Nov 24

Fingerprint

metalorganic chemical vapor deposition
quantum wells
excitons
photoluminescence
radiative lifetime
cathodoluminescence
sapphire
luminescence
trends
optical properties
scanning
decay
temperature
energy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Ko, T. S. ; Lu, T. C. ; Wang, T. C. ; Chen, J. R. ; Gao, R. C. ; Lo, M. H. ; Kuo, H. C. ; Wang, S. C. ; Shen, J. L. / Optical study of a -plane InGaN/GaN multiple quantum wells with different well widths grown by metal-organic chemical vapor deposition. In: Journal of Applied Physics. 2008 ; Vol. 104, No. 9.
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abstract = "a -plane InGaN/GaN multiple quantum wells of different widths ranging from 3 to 12 nm grown on r -plane sapphire by metal-organic chemical vapor deposition were investigated. The peak emission intensity of the photoluminescence (PL) reveals a decreasing trend as the well width increases from 3 to 12 nm. Low temperature (9 K) time-resolved PL (TRPL) study shows that the sample with 3-nm-thick wells has the best optical property with a fastest exciton decay time of 0.57 ns. The results of cathodoluminescence and micro-PL scanning images for samples of different well widths further verify that the more uniform and stronger luminescence intensity distribution are observed for the samples of thinner quantum wells. In addition, more effective capturing of excitons due to larger localization energy Eloc and shorter radiative lifetime of localized excitons are observed in thinner well width samples in the temperature dependent TRPL.",
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Optical study of a -plane InGaN/GaN multiple quantum wells with different well widths grown by metal-organic chemical vapor deposition. / Ko, T. S.; Lu, T. C.; Wang, T. C.; Chen, J. R.; Gao, R. C.; Lo, M. H.; Kuo, H. C.; Wang, S. C.; Shen, J. L.

In: Journal of Applied Physics, Vol. 104, No. 9, 093106, 24.11.2008.

Research output: Contribution to journalArticle

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AU - Ko, T. S.

AU - Lu, T. C.

AU - Wang, T. C.

AU - Chen, J. R.

AU - Gao, R. C.

AU - Lo, M. H.

AU - Kuo, H. C.

AU - Wang, S. C.

AU - Shen, J. L.

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