Optical sensing characteristics in a transparent Al-doped zinc oxide-gated Al0.2Ga0.8As/In0.2Ga0.8As high electron mobility transistor

Ching Sung Lee, Bo Yi Chou, Wei Chou Hsu, Sheng Yuan Chu, Der-Yuh Lin, Chiu Sheng Ho, Yin Lai Lai, Shen Han Yang, Wei Ting Chien

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A three-terminal optical sensor by using an aluminum-doped zinc oxide (AZO)-gated Al0.2Ga0.8As /In0.2Ga 0.8As high electron mobility transistor (AZO-HEMT) on a GaAs substrate is demonstrated in this report. Optical responses under illumination of different wavelengths are investigated, as compared to a conventional Au-gated HEMT device. Experimental results demonstrate that the present design is promising for tunable optical sensing applications.

Original languageEnglish
Title of host publication2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings
DOIs
Publication statusPublished - 2010 Jul 30
EventInternational Symposium on Photonics and Optoelectronics, SOPO 2010 - Chengdu, China
Duration: 2010 Jun 192010 Jun 21

Publication series

Name2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings

Other

OtherInternational Symposium on Photonics and Optoelectronics, SOPO 2010
CountryChina
CityChengdu
Period10-06-1910-06-21

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Lee, C. S., Chou, B. Y., Hsu, W. C., Chu, S. Y., Lin, D-Y., Ho, C. S., ... Chien, W. T. (2010). Optical sensing characteristics in a transparent Al-doped zinc oxide-gated Al0.2Ga0.8As/In0.2Ga0.8As high electron mobility transistor. In 2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings [5504370] (2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings). https://doi.org/10.1109/SOPO.2010.5504370