Optical sensing characteristics in a transparent Al-doped zinc oxide-gated Al0.2Ga0.8As/In0.2Ga0.8As high electron mobility transistor

Ching Sung Lee, Bo Yi Chou, Wei Chou Hsu, Sheng Yuan Chu, Der-Yuh Lin, Chiu Sheng Ho, Yin Lai Lai, Shen Han Yang, Wei Ting Chien

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A three-terminal optical sensor by using an aluminum-doped zinc oxide (AZO)-gated Al0.2Ga0.8As /In0.2Ga 0.8As high electron mobility transistor (AZO-HEMT) on a GaAs substrate is demonstrated in this report. Optical responses under illumination of different wavelengths are investigated, as compared to a conventional Au-gated HEMT device. Experimental results demonstrate that the present design is promising for tunable optical sensing applications.

Original languageEnglish
Title of host publication2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings
DOIs
Publication statusPublished - 2010 Jul 30
EventInternational Symposium on Photonics and Optoelectronics, SOPO 2010 - Chengdu, China
Duration: 2010 Jun 192010 Jun 21

Publication series

Name2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings

Other

OtherInternational Symposium on Photonics and Optoelectronics, SOPO 2010
CountryChina
CityChengdu
Period10-06-1910-06-21

Fingerprint

Zinc Oxide
High electron mobility transistors
Zinc oxide
Aluminum
Optical sensors
Lighting
Wavelength
Substrates

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Lee, C. S., Chou, B. Y., Hsu, W. C., Chu, S. Y., Lin, D-Y., Ho, C. S., ... Chien, W. T. (2010). Optical sensing characteristics in a transparent Al-doped zinc oxide-gated Al0.2Ga0.8As/In0.2Ga0.8As high electron mobility transistor. In 2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings [5504370] (2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings). https://doi.org/10.1109/SOPO.2010.5504370
Lee, Ching Sung ; Chou, Bo Yi ; Hsu, Wei Chou ; Chu, Sheng Yuan ; Lin, Der-Yuh ; Ho, Chiu Sheng ; Lai, Yin Lai ; Yang, Shen Han ; Chien, Wei Ting. / Optical sensing characteristics in a transparent Al-doped zinc oxide-gated Al0.2Ga0.8As/In0.2Ga0.8As high electron mobility transistor. 2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings. 2010. (2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings).
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title = "Optical sensing characteristics in a transparent Al-doped zinc oxide-gated Al0.2Ga0.8As/In0.2Ga0.8As high electron mobility transistor",
abstract = "A three-terminal optical sensor by using an aluminum-doped zinc oxide (AZO)-gated Al0.2Ga0.8As /In0.2Ga 0.8As high electron mobility transistor (AZO-HEMT) on a GaAs substrate is demonstrated in this report. Optical responses under illumination of different wavelengths are investigated, as compared to a conventional Au-gated HEMT device. Experimental results demonstrate that the present design is promising for tunable optical sensing applications.",
author = "Lee, {Ching Sung} and Chou, {Bo Yi} and Hsu, {Wei Chou} and Chu, {Sheng Yuan} and Der-Yuh Lin and Ho, {Chiu Sheng} and Lai, {Yin Lai} and Yang, {Shen Han} and Chien, {Wei Ting}",
year = "2010",
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doi = "10.1109/SOPO.2010.5504370",
language = "English",
isbn = "9781424449644",
series = "2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings",
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Lee, CS, Chou, BY, Hsu, WC, Chu, SY, Lin, D-Y, Ho, CS, Lai, YL, Yang, SH & Chien, WT 2010, Optical sensing characteristics in a transparent Al-doped zinc oxide-gated Al0.2Ga0.8As/In0.2Ga0.8As high electron mobility transistor. in 2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings., 5504370, 2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings, International Symposium on Photonics and Optoelectronics, SOPO 2010, Chengdu, China, 10-06-19. https://doi.org/10.1109/SOPO.2010.5504370

Optical sensing characteristics in a transparent Al-doped zinc oxide-gated Al0.2Ga0.8As/In0.2Ga0.8As high electron mobility transistor. / Lee, Ching Sung; Chou, Bo Yi; Hsu, Wei Chou; Chu, Sheng Yuan; Lin, Der-Yuh; Ho, Chiu Sheng; Lai, Yin Lai; Yang, Shen Han; Chien, Wei Ting.

2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings. 2010. 5504370 (2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AU - Lai, Yin Lai

AU - Yang, Shen Han

AU - Chien, Wei Ting

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N2 - A three-terminal optical sensor by using an aluminum-doped zinc oxide (AZO)-gated Al0.2Ga0.8As /In0.2Ga 0.8As high electron mobility transistor (AZO-HEMT) on a GaAs substrate is demonstrated in this report. Optical responses under illumination of different wavelengths are investigated, as compared to a conventional Au-gated HEMT device. Experimental results demonstrate that the present design is promising for tunable optical sensing applications.

AB - A three-terminal optical sensor by using an aluminum-doped zinc oxide (AZO)-gated Al0.2Ga0.8As /In0.2Ga 0.8As high electron mobility transistor (AZO-HEMT) on a GaAs substrate is demonstrated in this report. Optical responses under illumination of different wavelengths are investigated, as compared to a conventional Au-gated HEMT device. Experimental results demonstrate that the present design is promising for tunable optical sensing applications.

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Lee CS, Chou BY, Hsu WC, Chu SY, Lin D-Y, Ho CS et al. Optical sensing characteristics in a transparent Al-doped zinc oxide-gated Al0.2Ga0.8As/In0.2Ga0.8As high electron mobility transistor. In 2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings. 2010. 5504370. (2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings). https://doi.org/10.1109/SOPO.2010.5504370