Optical properties of Zn1-xCdxSe epilayers grown on (100) GaAs by molecular beam epitaxy

Ming Chin Kuo, Kuan Cheng Chiu, Tsai Hsuai Shih, Yi Jen Lai, Chu Shou Yang, Wei Kuo Chen, Der San Chuu, Ming Chih Lee, Wu Ching Chou, Syang Ywan Jeng, Yu-Tai Shih, Wen Ho Lan

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Abstract

Zn1-xCdxSe epilayers were grown on (100) GaAs substrates by molecular beam epitaxy. Lattice constants of the epilayers were measured by (004) rocking curve X-ray diffraction. A full width at half maximum of 475 to 2100 arcsec was obtained. The dependence of the energy gap on temperature, measured by the photoluminescence (PL) spectra, was fitted by Varshni's [Y. P. Varshni: Physica 34 149 (1967)] and O'Donnell's [R. P. O'Donnell and X. Chen: Appl. Phys. Lett. 58 2924 (1991)] models. The fitting parameters β (161K to 368 K) and (hv) (13 meV to 24 meV), related to phonon energy, were obtained from Varshni and O'Donnell fits, respectively. The activation energies calculated from the integrated PL intensity versus inverse temperature decrease as the Cd content increases. The broadening of the PL linewidth with temperature was fitted by ΓT(T) = Γ0 + Γ + ΓaT + ΓLo1/ [exp(ℏωLo1/kT)-1]+ΓLo2/ [exp(ℏωLo2/kT)-1]+Γiexp(-<E b>/kT)/. The impurity binding energy, <Eb>, was found to decrease as the Cd composition increases.

Original languageEnglish
Pages (from-to)5145-5150
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume43
Issue number8 A
DOIs
Publication statusPublished - 2004 Aug 1

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Epilayers
Molecular beam epitaxy
Photoluminescence
molecular beam epitaxy
Optical properties
photoluminescence
optical properties
Full width at half maximum
Binding energy
Linewidth
Temperature
Lattice constants
temperature
Energy gap
Activation energy
binding energy
Impurities
activation energy
X ray diffraction
impurities

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Kuo, Ming Chin ; Chiu, Kuan Cheng ; Shih, Tsai Hsuai ; Lai, Yi Jen ; Yang, Chu Shou ; Chen, Wei Kuo ; Chuu, Der San ; Lee, Ming Chih ; Chou, Wu Ching ; Jeng, Syang Ywan ; Shih, Yu-Tai ; Lan, Wen Ho. / Optical properties of Zn1-xCdxSe epilayers grown on (100) GaAs by molecular beam epitaxy. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2004 ; Vol. 43, No. 8 A. pp. 5145-5150.
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abstract = "Zn1-xCdxSe epilayers were grown on (100) GaAs substrates by molecular beam epitaxy. Lattice constants of the epilayers were measured by (004) rocking curve X-ray diffraction. A full width at half maximum of 475 to 2100 arcsec was obtained. The dependence of the energy gap on temperature, measured by the photoluminescence (PL) spectra, was fitted by Varshni's [Y. P. Varshni: Physica 34 149 (1967)] and O'Donnell's [R. P. O'Donnell and X. Chen: Appl. Phys. Lett. 58 2924 (1991)] models. The fitting parameters β (161K to 368 K) and (hv) (13 meV to 24 meV), related to phonon energy, were obtained from Varshni and O'Donnell fits, respectively. The activation energies calculated from the integrated PL intensity versus inverse temperature decrease as the Cd content increases. The broadening of the PL linewidth with temperature was fitted by ΓT(T) = Γ0 + Γ + ΓaT + ΓLo1/ [exp(ℏωLo1/kT)-1]+ΓLo2/ [exp(ℏωLo2/kT)-1]+Γiexp(-<E b>/kT)/. The impurity binding energy, <Eb>, was found to decrease as the Cd composition increases.",
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Optical properties of Zn1-xCdxSe epilayers grown on (100) GaAs by molecular beam epitaxy. / Kuo, Ming Chin; Chiu, Kuan Cheng; Shih, Tsai Hsuai; Lai, Yi Jen; Yang, Chu Shou; Chen, Wei Kuo; Chuu, Der San; Lee, Ming Chih; Chou, Wu Ching; Jeng, Syang Ywan; Shih, Yu-Tai; Lan, Wen Ho.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, No. 8 A, 01.08.2004, p. 5145-5150.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Optical properties of Zn1-xCdxSe epilayers grown on (100) GaAs by molecular beam epitaxy

AU - Kuo, Ming Chin

AU - Chiu, Kuan Cheng

AU - Shih, Tsai Hsuai

AU - Lai, Yi Jen

AU - Yang, Chu Shou

AU - Chen, Wei Kuo

AU - Chuu, Der San

AU - Lee, Ming Chih

AU - Chou, Wu Ching

AU - Jeng, Syang Ywan

AU - Shih, Yu-Tai

AU - Lan, Wen Ho

PY - 2004/8/1

Y1 - 2004/8/1

N2 - Zn1-xCdxSe epilayers were grown on (100) GaAs substrates by molecular beam epitaxy. Lattice constants of the epilayers were measured by (004) rocking curve X-ray diffraction. A full width at half maximum of 475 to 2100 arcsec was obtained. The dependence of the energy gap on temperature, measured by the photoluminescence (PL) spectra, was fitted by Varshni's [Y. P. Varshni: Physica 34 149 (1967)] and O'Donnell's [R. P. O'Donnell and X. Chen: Appl. Phys. Lett. 58 2924 (1991)] models. The fitting parameters β (161K to 368 K) and (hv) (13 meV to 24 meV), related to phonon energy, were obtained from Varshni and O'Donnell fits, respectively. The activation energies calculated from the integrated PL intensity versus inverse temperature decrease as the Cd content increases. The broadening of the PL linewidth with temperature was fitted by ΓT(T) = Γ0 + Γ + ΓaT + ΓLo1/ [exp(ℏωLo1/kT)-1]+ΓLo2/ [exp(ℏωLo2/kT)-1]+Γiexp(-<E b>/kT)/. The impurity binding energy, <Eb>, was found to decrease as the Cd composition increases.

AB - Zn1-xCdxSe epilayers were grown on (100) GaAs substrates by molecular beam epitaxy. Lattice constants of the epilayers were measured by (004) rocking curve X-ray diffraction. A full width at half maximum of 475 to 2100 arcsec was obtained. The dependence of the energy gap on temperature, measured by the photoluminescence (PL) spectra, was fitted by Varshni's [Y. P. Varshni: Physica 34 149 (1967)] and O'Donnell's [R. P. O'Donnell and X. Chen: Appl. Phys. Lett. 58 2924 (1991)] models. The fitting parameters β (161K to 368 K) and (hv) (13 meV to 24 meV), related to phonon energy, were obtained from Varshni and O'Donnell fits, respectively. The activation energies calculated from the integrated PL intensity versus inverse temperature decrease as the Cd content increases. The broadening of the PL linewidth with temperature was fitted by ΓT(T) = Γ0 + Γ + ΓaT + ΓLo1/ [exp(ℏωLo1/kT)-1]+ΓLo2/ [exp(ℏωLo2/kT)-1]+Γiexp(-<E b>/kT)/. The impurity binding energy, <Eb>, was found to decrease as the Cd composition increases.

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JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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