Abstract
The effect of the damage caused by reactive ion etching on the optical properties of heavily Mg-doped p-type GaN (p-GaN) was investigated in this study. After etching, we found that the blue luminescence (BL) is redshifted and the intensity of the redshifted BL is markedly increased at room temperature, which are attributed to the formation of the lattice disorder resulting in the domination of distant donor-acceptor pairs (DAPs) and the formation of more nitrogen-vacancy-related defects resulting in more recombination centers D responsible for DAP transition 10.1143/JJAP.45.64
| Original language | English |
|---|---|
| Pages (from-to) | 64-66 |
| Number of pages | 3 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 45 |
| Issue number | 1 A |
| DOIs | |
| Publication status | Published - 2006 Jan 10 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
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Optical properties of heavily Mg-doped p-GaN films prepared by reactive ion etching. / Lin, Yow-Jon; Chu, Yow Lin; Liu, Day Shan; Lee, Chi Sen; Chien, Feng Tso.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 1 A, 10.01.2006, p. 64-66.Research output: Contribution to journal › Article
TY - JOUR
T1 - Optical properties of heavily Mg-doped p-GaN films prepared by reactive ion etching
AU - Lin, Yow-Jon
AU - Chu, Yow Lin
AU - Liu, Day Shan
AU - Lee, Chi Sen
AU - Chien, Feng Tso
PY - 2006/1/10
Y1 - 2006/1/10
N2 - The effect of the damage caused by reactive ion etching on the optical properties of heavily Mg-doped p-type GaN (p-GaN) was investigated in this study. After etching, we found that the blue luminescence (BL) is redshifted and the intensity of the redshifted BL is markedly increased at room temperature, which are attributed to the formation of the lattice disorder resulting in the domination of distant donor-acceptor pairs (DAPs) and the formation of more nitrogen-vacancy-related defects resulting in more recombination centers D responsible for DAP transition 10.1143/JJAP.45.64
AB - The effect of the damage caused by reactive ion etching on the optical properties of heavily Mg-doped p-type GaN (p-GaN) was investigated in this study. After etching, we found that the blue luminescence (BL) is redshifted and the intensity of the redshifted BL is markedly increased at room temperature, which are attributed to the formation of the lattice disorder resulting in the domination of distant donor-acceptor pairs (DAPs) and the formation of more nitrogen-vacancy-related defects resulting in more recombination centers D responsible for DAP transition 10.1143/JJAP.45.64
UR - http://www.scopus.com/inward/record.url?scp=31544475940&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=31544475940&partnerID=8YFLogxK
U2 - 10.1143/JJAP.45.64
DO - 10.1143/JJAP.45.64
M3 - Article
AN - SCOPUS:31544475940
VL - 45
SP - 64
EP - 66
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 1 A
ER -