Optical properties of heavily Mg-doped p-GaN films prepared by reactive ion etching

Yow-Jon Lin; Yow Lin Chu; Day Shan Liu; Chi Sen Lee; Feng Tso Chien

doi:10.1143/JJAP.45.64

Optical properties of heavily Mg-doped p-GaN films prepared by reactive ion etching

Yow-Jon Lin, Yow Lin Chu, Day Shan Liu, Chi Sen Lee, Feng Tso Chien

Graduate Institute of Photonics

Research output: Contribution to journal › Article

1 Citation (Scopus)

Abstract

The effect of the damage caused by reactive ion etching on the optical properties of heavily Mg-doped p-type GaN (p-GaN) was investigated in this study. After etching, we found that the blue luminescence (BL) is redshifted and the intensity of the redshifted BL is markedly increased at room temperature, which are attributed to the formation of the lattice disorder resulting in the domination of distant donor-acceptor pairs (DAPs) and the formation of more nitrogen-vacancy-related defects resulting in more recombination centers D responsible for DAP transition 10.1143/JJAP.45.64

Original language	English
Pages (from-to)	64-66
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	45
Issue number	1 A
DOIs	https://doi.org/10.1143/JJAP.45.64
Publication status	Published - 2006 Jan 10

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All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

Cite this

Lin, Y-J., Chu, Y. L., Liu, D. S., Lee, C. S., & Chien, F. T. (2006). Optical properties of heavily Mg-doped p-GaN films prepared by reactive ion etching. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 45(1 A), 64-66. https://doi.org/10.1143/JJAP.45.64

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AU - Chien, Feng Tso

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10.1143/JJAP.45.64