Optical properties of heavily Mg-doped p-GaN films prepared by reactive ion etching

Yow-Jon Lin; Yow Lin Chu; Day Shan Liu; Chi Sen Lee; Feng Tso Chien

doi:10.1143/JJAP.45.64

Optical properties of heavily Mg-doped p-GaN films prepared by reactive ion etching

Yow-Jon Lin, Yow Lin Chu, Day Shan Liu, Chi Sen Lee, Feng Tso Chien

Graduate Institute of Photonics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The effect of the damage caused by reactive ion etching on the optical properties of heavily Mg-doped p-type GaN (p-GaN) was investigated in this study. After etching, we found that the blue luminescence (BL) is redshifted and the intensity of the redshifted BL is markedly increased at room temperature, which are attributed to the formation of the lattice disorder resulting in the domination of distant donor-acceptor pairs (DAPs) and the formation of more nitrogen-vacancy-related defects resulting in more recombination centers D responsible for DAP transition 10.1143/JJAP.45.64

Original language	English
Pages (from-to)	64-66
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	45
Issue number	1 A
DOIs	https://doi.org/10.1143/JJAP.45.64
Publication status	Published - 2006 Jan 10

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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@article{8396b5fcd20644b8b465e25092a50d4e,

title = "Optical properties of heavily Mg-doped p-GaN films prepared by reactive ion etching",

abstract = "The effect of the damage caused by reactive ion etching on the optical properties of heavily Mg-doped p-type GaN (p-GaN) was investigated in this study. After etching, we found that the blue luminescence (BL) is redshifted and the intensity of the redshifted BL is markedly increased at room temperature, which are attributed to the formation of the lattice disorder resulting in the domination of distant donor-acceptor pairs (DAPs) and the formation of more nitrogen-vacancy-related defects resulting in more recombination centers D responsible for DAP transition 10.1143/JJAP.45.64",

author = "Yow-Jon Lin and Chu, {Yow Lin} and Liu, {Day Shan} and Lee, {Chi Sen} and Chien, {Feng Tso}",

year = "2006",

month = jan,

day = "10",

doi = "10.1143/JJAP.45.64",

language = "English",

volume = "45",

pages = "64--66",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "1 A",

}

TY - JOUR

T1 - Optical properties of heavily Mg-doped p-GaN films prepared by reactive ion etching

AU - Lin, Yow-Jon

AU - Chu, Yow Lin

AU - Liu, Day Shan

AU - Lee, Chi Sen

AU - Chien, Feng Tso

PY - 2006/1/10

Y1 - 2006/1/10

N2 - The effect of the damage caused by reactive ion etching on the optical properties of heavily Mg-doped p-type GaN (p-GaN) was investigated in this study. After etching, we found that the blue luminescence (BL) is redshifted and the intensity of the redshifted BL is markedly increased at room temperature, which are attributed to the formation of the lattice disorder resulting in the domination of distant donor-acceptor pairs (DAPs) and the formation of more nitrogen-vacancy-related defects resulting in more recombination centers D responsible for DAP transition 10.1143/JJAP.45.64

AB - The effect of the damage caused by reactive ion etching on the optical properties of heavily Mg-doped p-type GaN (p-GaN) was investigated in this study. After etching, we found that the blue luminescence (BL) is redshifted and the intensity of the redshifted BL is markedly increased at room temperature, which are attributed to the formation of the lattice disorder resulting in the domination of distant donor-acceptor pairs (DAPs) and the formation of more nitrogen-vacancy-related defects resulting in more recombination centers D responsible for DAP transition 10.1143/JJAP.45.64

UR - http://www.scopus.com/inward/record.url?scp=31544475940&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=31544475940&partnerID=8YFLogxK

U2 - 10.1143/JJAP.45.64

DO - 10.1143/JJAP.45.64

M3 - Article

AN - SCOPUS:31544475940

VL - 45

SP - 64

EP - 66

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 1 A

ER -