Optical properties of heavily Mg-doped p-GaN films prepared by reactive ion etching

Yow-Jon Lin, Yow Lin Chu, Day Shan Liu, Chi Sen Lee, Feng Tso Chien

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The effect of the damage caused by reactive ion etching on the optical properties of heavily Mg-doped p-type GaN (p-GaN) was investigated in this study. After etching, we found that the blue luminescence (BL) is redshifted and the intensity of the redshifted BL is markedly increased at room temperature, which are attributed to the formation of the lattice disorder resulting in the domination of distant donor-acceptor pairs (DAPs) and the formation of more nitrogen-vacancy-related defects resulting in more recombination centers D responsible for DAP transition 10.1143/JJAP.45.64

Original languageEnglish
Pages (from-to)64-66
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number1 A
DOIs
Publication statusPublished - 2006 Jan 10

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Reactive ion etching
Luminescence
Optical properties
etching
luminescence
optical properties
Vacancies
Etching
ions
disorders
damage
Nitrogen
nitrogen
Defects
defects
room temperature
Temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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abstract = "The effect of the damage caused by reactive ion etching on the optical properties of heavily Mg-doped p-type GaN (p-GaN) was investigated in this study. After etching, we found that the blue luminescence (BL) is redshifted and the intensity of the redshifted BL is markedly increased at room temperature, which are attributed to the formation of the lattice disorder resulting in the domination of distant donor-acceptor pairs (DAPs) and the formation of more nitrogen-vacancy-related defects resulting in more recombination centers D responsible for DAP transition 10.1143/JJAP.45.64",
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Optical properties of heavily Mg-doped p-GaN films prepared by reactive ion etching. / Lin, Yow-Jon; Chu, Yow Lin; Liu, Day Shan; Lee, Chi Sen; Chien, Feng Tso.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 1 A, 10.01.2006, p. 64-66.

Research output: Contribution to journalArticle

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AU - Liu, Day Shan

AU - Lee, Chi Sen

AU - Chien, Feng Tso

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