Optical properties of a-plane GaN strained by photo-chemically grown gallium hydroxide

S. L. Wang, B. C. Yeh, H. M. Wu, L. H. Peng, C. M. Lai, Tsung-Shine Ko, T. C. Lu, S. C. Wang, A. H. Kung

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

We report the observation of green emission centered at 500nm, accompanied with luminescence enhancement and spectral blue shift (∼31meV) in the bandedge emission from a-plane grown gallium nitride (GaN) passivated with gallium hydroxide (GaOOH). From study of the photo-current response and polarization-resolved low-temperature microphotoluminescence (μ-PL) we resolved an evolution of gain competition process between the green and the UV emission bands. By dissolving the oxide we recover the emission characteristics of the as-grown a-GaN. These observations can be ascribed to a formation of compressively-strained a-GaN due to a coherently grown GaOOH atop layer. The latter is responsible for the spectral blue shift and the generation of acceptor like deep-levels causing the green-band transition in the emission and photo-current response. Enhancement of bandedge emission from the oxide covered a-GaN is due to the GaOOH surface passivation effect which was prepared by the photo-enhance wet oxidation method.

Original languageEnglish
Pages (from-to)1780-1782
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume5
Issue number6
DOIs
Publication statusPublished - 2008 Dec 1
Event7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States
Duration: 2007 Sep 162007 Sep 21

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gallium nitrides
hydroxides
gallium
optical properties
blue shift
oxides
augmentation
passivity
dissolving
luminescence
oxidation
polarization

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Cite this

Wang, S. L. ; Yeh, B. C. ; Wu, H. M. ; Peng, L. H. ; Lai, C. M. ; Ko, Tsung-Shine ; Lu, T. C. ; Wang, S. C. ; Kung, A. H. / Optical properties of a-plane GaN strained by photo-chemically grown gallium hydroxide. In: Physica Status Solidi (C) Current Topics in Solid State Physics. 2008 ; Vol. 5, No. 6. pp. 1780-1782.
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abstract = "We report the observation of green emission centered at 500nm, accompanied with luminescence enhancement and spectral blue shift (∼31meV) in the bandedge emission from a-plane grown gallium nitride (GaN) passivated with gallium hydroxide (GaOOH). From study of the photo-current response and polarization-resolved low-temperature microphotoluminescence (μ-PL) we resolved an evolution of gain competition process between the green and the UV emission bands. By dissolving the oxide we recover the emission characteristics of the as-grown a-GaN. These observations can be ascribed to a formation of compressively-strained a-GaN due to a coherently grown GaOOH atop layer. The latter is responsible for the spectral blue shift and the generation of acceptor like deep-levels causing the green-band transition in the emission and photo-current response. Enhancement of bandedge emission from the oxide covered a-GaN is due to the GaOOH surface passivation effect which was prepared by the photo-enhance wet oxidation method.",
author = "Wang, {S. L.} and Yeh, {B. C.} and Wu, {H. M.} and Peng, {L. H.} and Lai, {C. M.} and Tsung-Shine Ko and Lu, {T. C.} and Wang, {S. C.} and Kung, {A. H.}",
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Optical properties of a-plane GaN strained by photo-chemically grown gallium hydroxide. / Wang, S. L.; Yeh, B. C.; Wu, H. M.; Peng, L. H.; Lai, C. M.; Ko, Tsung-Shine; Lu, T. C.; Wang, S. C.; Kung, A. H.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 5, No. 6, 01.12.2008, p. 1780-1782.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Optical properties of a-plane GaN strained by photo-chemically grown gallium hydroxide

AU - Wang, S. L.

AU - Yeh, B. C.

AU - Wu, H. M.

AU - Peng, L. H.

AU - Lai, C. M.

AU - Ko, Tsung-Shine

AU - Lu, T. C.

AU - Wang, S. C.

AU - Kung, A. H.

PY - 2008/12/1

Y1 - 2008/12/1

N2 - We report the observation of green emission centered at 500nm, accompanied with luminescence enhancement and spectral blue shift (∼31meV) in the bandedge emission from a-plane grown gallium nitride (GaN) passivated with gallium hydroxide (GaOOH). From study of the photo-current response and polarization-resolved low-temperature microphotoluminescence (μ-PL) we resolved an evolution of gain competition process between the green and the UV emission bands. By dissolving the oxide we recover the emission characteristics of the as-grown a-GaN. These observations can be ascribed to a formation of compressively-strained a-GaN due to a coherently grown GaOOH atop layer. The latter is responsible for the spectral blue shift and the generation of acceptor like deep-levels causing the green-band transition in the emission and photo-current response. Enhancement of bandedge emission from the oxide covered a-GaN is due to the GaOOH surface passivation effect which was prepared by the photo-enhance wet oxidation method.

AB - We report the observation of green emission centered at 500nm, accompanied with luminescence enhancement and spectral blue shift (∼31meV) in the bandedge emission from a-plane grown gallium nitride (GaN) passivated with gallium hydroxide (GaOOH). From study of the photo-current response and polarization-resolved low-temperature microphotoluminescence (μ-PL) we resolved an evolution of gain competition process between the green and the UV emission bands. By dissolving the oxide we recover the emission characteristics of the as-grown a-GaN. These observations can be ascribed to a formation of compressively-strained a-GaN due to a coherently grown GaOOH atop layer. The latter is responsible for the spectral blue shift and the generation of acceptor like deep-levels causing the green-band transition in the emission and photo-current response. Enhancement of bandedge emission from the oxide covered a-GaN is due to the GaOOH surface passivation effect which was prepared by the photo-enhance wet oxidation method.

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