Abstract
The valence subband structures, optical gain spectra, transparency carrier densities, and transparency radiative current densities of different compressively strained InGaAlAs quantum wells with Al0.3Ga0.7As barriers are systematically investigated using a 6 × 6 k · p Hamiltonian including the heavy hole, light hole, and spin-orbit splitting bands. The results of numerical calculations show that the maximum optical gain, transparency carrier densities, transparency radiative current densities, and differential gain of InGaAlAs quantum wells can be enhanced by introducing more compressive strain in quantum wells. However, further improvement of the optical properties of InGaAlAs quantum wells becomes minimal when the compressive strain is higher than approximately 1.5%. The simulation results suggest that the compressively strained InGaAlAs quantum wells are of advantages for application in high-speed 850-nm vertical-cavity surface-emitting lasers.
| Original language | English |
|---|---|
| Pages (from-to) | 213-218 |
| Number of pages | 6 |
| Journal | Optics Communications |
| Volume | 264 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2006 Aug 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering
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Optical gain and threshold properties of strained InGaAlAs/AlGaAs quantum wells for 850-nm vertical-cavity surface-emitting lasers. / Chen, Jun Rong; Kuo, Yen-Kuang.
In: Optics Communications, Vol. 264, No. 1, 01.08.2006, p. 213-218.Research output: Contribution to journal › Article
TY - JOUR
T1 - Optical gain and threshold properties of strained InGaAlAs/AlGaAs quantum wells for 850-nm vertical-cavity surface-emitting lasers
AU - Chen, Jun Rong
AU - Kuo, Yen-Kuang
PY - 2006/8/1
Y1 - 2006/8/1
N2 - The valence subband structures, optical gain spectra, transparency carrier densities, and transparency radiative current densities of different compressively strained InGaAlAs quantum wells with Al0.3Ga0.7As barriers are systematically investigated using a 6 × 6 k · p Hamiltonian including the heavy hole, light hole, and spin-orbit splitting bands. The results of numerical calculations show that the maximum optical gain, transparency carrier densities, transparency radiative current densities, and differential gain of InGaAlAs quantum wells can be enhanced by introducing more compressive strain in quantum wells. However, further improvement of the optical properties of InGaAlAs quantum wells becomes minimal when the compressive strain is higher than approximately 1.5%. The simulation results suggest that the compressively strained InGaAlAs quantum wells are of advantages for application in high-speed 850-nm vertical-cavity surface-emitting lasers.
AB - The valence subband structures, optical gain spectra, transparency carrier densities, and transparency radiative current densities of different compressively strained InGaAlAs quantum wells with Al0.3Ga0.7As barriers are systematically investigated using a 6 × 6 k · p Hamiltonian including the heavy hole, light hole, and spin-orbit splitting bands. The results of numerical calculations show that the maximum optical gain, transparency carrier densities, transparency radiative current densities, and differential gain of InGaAlAs quantum wells can be enhanced by introducing more compressive strain in quantum wells. However, further improvement of the optical properties of InGaAlAs quantum wells becomes minimal when the compressive strain is higher than approximately 1.5%. The simulation results suggest that the compressively strained InGaAlAs quantum wells are of advantages for application in high-speed 850-nm vertical-cavity surface-emitting lasers.
UR - http://www.scopus.com/inward/record.url?scp=33745984767&partnerID=8YFLogxK
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U2 - 10.1016/j.optcom.2006.02.033
DO - 10.1016/j.optcom.2006.02.033
M3 - Article
AN - SCOPUS:33745984767
VL - 264
SP - 213
EP - 218
JO - Optics Communications
JF - Optics Communications
SN - 0030-4018
IS - 1
ER -