Optical gain and threshold properties of strained InGaAlAs/AlGaAs quantum wells for 850-nm vertical-cavity surface-emitting lasers

Jun Rong Chen, Yen-Kuang Kuo

Research output: Contribution to journalArticle

Abstract

The valence subband structures, optical gain spectra, transparency carrier densities, and transparency radiative current densities of different compressively strained InGaAlAs quantum wells with Al0.3Ga0.7As barriers are systematically investigated using a 6 × 6 k · p Hamiltonian including the heavy hole, light hole, and spin-orbit splitting bands. The results of numerical calculations show that the maximum optical gain, transparency carrier densities, transparency radiative current densities, and differential gain of InGaAlAs quantum wells can be enhanced by introducing more compressive strain in quantum wells. However, further improvement of the optical properties of InGaAlAs quantum wells becomes minimal when the compressive strain is higher than approximately 1.5%. The simulation results suggest that the compressively strained InGaAlAs quantum wells are of advantages for application in high-speed 850-nm vertical-cavity surface-emitting lasers.

Original languageEnglish
Pages (from-to)213-218
Number of pages6
JournalOptics Communications
Volume264
Issue number1
DOIs
Publication statusPublished - 2006 Aug 1

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Optical gain
Surface emitting lasers
surface emitting lasers
Semiconductor quantum wells
aluminum gallium arsenides
Transparency
quantum wells
cavities
thresholds
Carrier concentration
Current density
current density
Hamiltonians
Orbits
Optical properties
high speed
valence
orbits
optical properties
simulation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Physical and Theoretical Chemistry
  • Electrical and Electronic Engineering

Cite this

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abstract = "The valence subband structures, optical gain spectra, transparency carrier densities, and transparency radiative current densities of different compressively strained InGaAlAs quantum wells with Al0.3Ga0.7As barriers are systematically investigated using a 6 × 6 k · p Hamiltonian including the heavy hole, light hole, and spin-orbit splitting bands. The results of numerical calculations show that the maximum optical gain, transparency carrier densities, transparency radiative current densities, and differential gain of InGaAlAs quantum wells can be enhanced by introducing more compressive strain in quantum wells. However, further improvement of the optical properties of InGaAlAs quantum wells becomes minimal when the compressive strain is higher than approximately 1.5{\%}. The simulation results suggest that the compressively strained InGaAlAs quantum wells are of advantages for application in high-speed 850-nm vertical-cavity surface-emitting lasers.",
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Optical gain and threshold properties of strained InGaAlAs/AlGaAs quantum wells for 850-nm vertical-cavity surface-emitting lasers. / Chen, Jun Rong; Kuo, Yen-Kuang.

In: Optics Communications, Vol. 264, No. 1, 01.08.2006, p. 213-218.

Research output: Contribution to journalArticle

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