Optical characterization of ZnMnO thin films on c-Al2O 3

H. J. Lin; D. Y. Lin; J. S. Wu; W. C. Chou; C. S. Yang; J. S. Wang; W. H. Lo

doi:10.3938/jkps.53.98

Optical characterization of ZnMnO thin films on c-Al₂O ₃

H. J. Lin, D. Y. Lin, J. S. Wu, W. C. Chou, C. S. Yang, J. S. Wang, W. H. Lo

Department of Electronic Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Various optical measurement technologies have been used to characterize ZnMnO thin films with different Mn compositions grown by molecular beam epitaxy (MBE) on c-Al₂O₃ substrates. The lattice constant and the crystalization quality have been evaluated by using X-ray diffraction (XRD). Photoluminescence (PL) has been used to reveal the neutral-donor-bound exciton (D⁰X) and to check the film's quality. Defect-related absorption signatures, in addition to near-band-edge absorption, due to the zinc vacancy and the donor-acceptor pair (DAP) have been found in the surface photovoltage spectra (SPS). Free excitonic transitions and their phonon-assisted replicas have been observed in the reflectance spectra. Our experimental results not only unveil specific optical transition energies but also indicate a rapid material deterioration when Mn incorporation goes beyond a certain amount to cause manganese segregation.

Original language	English
Pages (from-to)	98-101
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	53
Issue number	1
DOIs	https://doi.org/10.3938/jkps.53.98
Publication status	Published - 2008 Jul

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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title = "Optical characterization of ZnMnO thin films on c-Al2O 3",

abstract = "Various optical measurement technologies have been used to characterize ZnMnO thin films with different Mn compositions grown by molecular beam epitaxy (MBE) on c-Al2O3 substrates. The lattice constant and the crystalization quality have been evaluated by using X-ray diffraction (XRD). Photoluminescence (PL) has been used to reveal the neutral-donor-bound exciton (D0X) and to check the film's quality. Defect-related absorption signatures, in addition to near-band-edge absorption, due to the zinc vacancy and the donor-acceptor pair (DAP) have been found in the surface photovoltage spectra (SPS). Free excitonic transitions and their phonon-assisted replicas have been observed in the reflectance spectra. Our experimental results not only unveil specific optical transition energies but also indicate a rapid material deterioration when Mn incorporation goes beyond a certain amount to cause manganese segregation.",

author = "Lin, {H. J.} and Lin, {D. Y.} and Wu, {J. S.} and Chou, {W. C.} and Yang, {C. S.} and Wang, {J. S.} and Lo, {W. H.}",

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T1 - Optical characterization of ZnMnO thin films on c-Al2O 3

AU - Lin, H. J.

AU - Lin, D. Y.

AU - Wu, J. S.

AU - Chou, W. C.

AU - Yang, C. S.

AU - Wang, J. S.

AU - Lo, W. H.

PY - 2008/7

Y1 - 2008/7

N2 - Various optical measurement technologies have been used to characterize ZnMnO thin films with different Mn compositions grown by molecular beam epitaxy (MBE) on c-Al2O3 substrates. The lattice constant and the crystalization quality have been evaluated by using X-ray diffraction (XRD). Photoluminescence (PL) has been used to reveal the neutral-donor-bound exciton (D0X) and to check the film's quality. Defect-related absorption signatures, in addition to near-band-edge absorption, due to the zinc vacancy and the donor-acceptor pair (DAP) have been found in the surface photovoltage spectra (SPS). Free excitonic transitions and their phonon-assisted replicas have been observed in the reflectance spectra. Our experimental results not only unveil specific optical transition energies but also indicate a rapid material deterioration when Mn incorporation goes beyond a certain amount to cause manganese segregation.

AB - Various optical measurement technologies have been used to characterize ZnMnO thin films with different Mn compositions grown by molecular beam epitaxy (MBE) on c-Al2O3 substrates. The lattice constant and the crystalization quality have been evaluated by using X-ray diffraction (XRD). Photoluminescence (PL) has been used to reveal the neutral-donor-bound exciton (D0X) and to check the film's quality. Defect-related absorption signatures, in addition to near-band-edge absorption, due to the zinc vacancy and the donor-acceptor pair (DAP) have been found in the surface photovoltage spectra (SPS). Free excitonic transitions and their phonon-assisted replicas have been observed in the reflectance spectra. Our experimental results not only unveil specific optical transition energies but also indicate a rapid material deterioration when Mn incorporation goes beyond a certain amount to cause manganese segregation.

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