Abstract
Four p-i-n GaInP solar cells were grown by metal organic chemical vapor deposition (MOCVD) with different intrinsic layer thicknesses from 0.25 to 1 μm. A series of optical measurements, including electroreflectance (ER), photoluminescence (PL), electric luminescence (EL), and photocurrent (PC) measurements, have been performed to study the built-in electric field effect and to determine the suitable thickness of an intrinsic layer. The PL and EL spectra reflected the crystal quality of the GaInP layers. Furthermore, from the obtained ER spectrum, the built-in electric field in the intrinsic layer can be revealed. From the PC spectra under various bias voltages, the effect of built-in electric fields on the collection of photogenerated carriers has been studied.
| Original language | English |
|---|---|
| Article number | 04DR06 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 54 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2015 Apr 1 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
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Optical characterization of GaInP p-i-n solar cells. / Li, Yun Guang; Lin, Der Yuh; Ko, Tsung Shine; Wu, Jenq Shinn; Wu, Chih Hung; Tsai, Yu Li; Kao, Ming Cheng; Chen, Hong Zen.
In: Japanese Journal of Applied Physics, Vol. 54, No. 4, 04DR06, 01.04.2015.Research output: Contribution to journal › Article
TY - JOUR
T1 - Optical characterization of GaInP p-i-n solar cells
AU - Li, Yun Guang
AU - Lin, Der Yuh
AU - Ko, Tsung Shine
AU - Wu, Jenq Shinn
AU - Wu, Chih Hung
AU - Tsai, Yu Li
AU - Kao, Ming Cheng
AU - Chen, Hong Zen
PY - 2015/4/1
Y1 - 2015/4/1
N2 - Four p-i-n GaInP solar cells were grown by metal organic chemical vapor deposition (MOCVD) with different intrinsic layer thicknesses from 0.25 to 1 μm. A series of optical measurements, including electroreflectance (ER), photoluminescence (PL), electric luminescence (EL), and photocurrent (PC) measurements, have been performed to study the built-in electric field effect and to determine the suitable thickness of an intrinsic layer. The PL and EL spectra reflected the crystal quality of the GaInP layers. Furthermore, from the obtained ER spectrum, the built-in electric field in the intrinsic layer can be revealed. From the PC spectra under various bias voltages, the effect of built-in electric fields on the collection of photogenerated carriers has been studied.
AB - Four p-i-n GaInP solar cells were grown by metal organic chemical vapor deposition (MOCVD) with different intrinsic layer thicknesses from 0.25 to 1 μm. A series of optical measurements, including electroreflectance (ER), photoluminescence (PL), electric luminescence (EL), and photocurrent (PC) measurements, have been performed to study the built-in electric field effect and to determine the suitable thickness of an intrinsic layer. The PL and EL spectra reflected the crystal quality of the GaInP layers. Furthermore, from the obtained ER spectrum, the built-in electric field in the intrinsic layer can be revealed. From the PC spectra under various bias voltages, the effect of built-in electric fields on the collection of photogenerated carriers has been studied.
UR - http://www.scopus.com/inward/record.url?scp=84926348595&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84926348595&partnerID=8YFLogxK
U2 - 10.7567/JJAP.54.04DR06
DO - 10.7567/JJAP.54.04DR06
M3 - Article
AN - SCOPUS:84926348595
VL - 54
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4
M1 - 04DR06
ER -