Optical characterization of AlxGa1-xN/GaN high electron mobility transistor structures

Der-Yuh Lin, J. D. Wu, J. Y. Zheng, C. F. Lin

Research output: Contribution to journalArticle

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Abstract

We present optical characterizations on three AlxGa1-xN/GaN high electron mobility transistor (HEMT) structures with different Al compositions using photoluminescence (PL), contactless electroreflectance (CER), photoreflectance (PR), photoconductivity (PC) and persistent photoconductivity (PPC) measurements. The samples used in this study were grown by metal organic chemical vapor deposition (MOCVD) on sapphire substrates, and were designated as samples A (x=0.07), B (x=0.11), and C (x=0.13). From PL and PR spectra the interband luminescences of GaN and AlxGa1-xN are identified, and hence the Al composition x can be determined. From CER spectra, we found a broad feature related to 2-dimensional electron gas (2DEG) and AlxGa1-xN bandgap transition with Franz-Keldysh oscillations (FKOs) in the high-energy end. The Al composition x is confirmed from the bandgap energy of AlxGa1-xN layer deduced from CER spectra, and the built-in electric field in the barrier layer can be determined by analyzing the period of FKOs. It has been shown that the internal electric field in AlxGa1-xN layer is enhanced as the Al composition is increased. For sample C, the PC and PPC spectra excited by different monochromatic lights have been done at room temperature and different decay times were evaluated.

Original languageEnglish
Pages (from-to)1763-1765
Number of pages3
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume40
Issue number5
DOIs
Publication statusPublished - 2008 Mar 1

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Photoconductivity
High electron mobility transistors
high electron mobility transistors
photoconductivity
Chemical analysis
Photoluminescence
Energy gap
Electric fields
Organic Chemicals
photoluminescence
oscillations
Electron gas
electric fields
Aluminum Oxide
Organic chemicals
barrier layers
Electron transitions
Sapphire
luminaires
metalorganic chemical vapor deposition

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

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title = "Optical characterization of AlxGa1-xN/GaN high electron mobility transistor structures",
abstract = "We present optical characterizations on three AlxGa1-xN/GaN high electron mobility transistor (HEMT) structures with different Al compositions using photoluminescence (PL), contactless electroreflectance (CER), photoreflectance (PR), photoconductivity (PC) and persistent photoconductivity (PPC) measurements. The samples used in this study were grown by metal organic chemical vapor deposition (MOCVD) on sapphire substrates, and were designated as samples A (x=0.07), B (x=0.11), and C (x=0.13). From PL and PR spectra the interband luminescences of GaN and AlxGa1-xN are identified, and hence the Al composition x can be determined. From CER spectra, we found a broad feature related to 2-dimensional electron gas (2DEG) and AlxGa1-xN bandgap transition with Franz-Keldysh oscillations (FKOs) in the high-energy end. The Al composition x is confirmed from the bandgap energy of AlxGa1-xN layer deduced from CER spectra, and the built-in electric field in the barrier layer can be determined by analyzing the period of FKOs. It has been shown that the internal electric field in AlxGa1-xN layer is enhanced as the Al composition is increased. For sample C, the PC and PPC spectra excited by different monochromatic lights have been done at room temperature and different decay times were evaluated.",
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Optical characterization of AlxGa1-xN/GaN high electron mobility transistor structures. / Lin, Der-Yuh; Wu, J. D.; Zheng, J. Y.; Lin, C. F.

In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 40, No. 5, 01.03.2008, p. 1763-1765.

Research output: Contribution to journalArticle

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T1 - Optical characterization of AlxGa1-xN/GaN high electron mobility transistor structures

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AB - We present optical characterizations on three AlxGa1-xN/GaN high electron mobility transistor (HEMT) structures with different Al compositions using photoluminescence (PL), contactless electroreflectance (CER), photoreflectance (PR), photoconductivity (PC) and persistent photoconductivity (PPC) measurements. The samples used in this study were grown by metal organic chemical vapor deposition (MOCVD) on sapphire substrates, and were designated as samples A (x=0.07), B (x=0.11), and C (x=0.13). From PL and PR spectra the interband luminescences of GaN and AlxGa1-xN are identified, and hence the Al composition x can be determined. From CER spectra, we found a broad feature related to 2-dimensional electron gas (2DEG) and AlxGa1-xN bandgap transition with Franz-Keldysh oscillations (FKOs) in the high-energy end. The Al composition x is confirmed from the bandgap energy of AlxGa1-xN layer deduced from CER spectra, and the built-in electric field in the barrier layer can be determined by analyzing the period of FKOs. It has been shown that the internal electric field in AlxGa1-xN layer is enhanced as the Al composition is increased. For sample C, the PC and PPC spectra excited by different monochromatic lights have been done at room temperature and different decay times were evaluated.

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