Optical characterization of a Zn0.88Mg0.12S0.18Se0.82 epilayer on GaAs

H. J. Chen, Der-Yuh Lin, Y. S. Huang, R. C. Tu, Y. K. Su, K. K. Tiong

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We have performed the photoluminescence, piezoreflectance and contactless electroreflectance study of a Zn0.88Mg0.12S0.18Se0.82 film, grown by molecular beam epitaxy on a (001) GaAs substrate, near the band edge in the temperature range between 15 and 300 K. The features related to the band-to-band excitonic and defect-related transitions of the material are observed and the nature of these features are discussed. In addition, the parameters that describe the temperature dependence of the interband transition energy and broadening function of the excitonic feature are evaluated.

Original languageEnglish
Pages (from-to)533-541
Number of pages9
JournalChinese Journal of Physics
Volume36
Issue number3
Publication statusPublished - 1998 Dec 1

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molecular beam epitaxy
photoluminescence
temperature dependence
defects
temperature
energy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Chen, H. J., Lin, D-Y., Huang, Y. S., Tu, R. C., Su, Y. K., & Tiong, K. K. (1998). Optical characterization of a Zn0.88Mg0.12S0.18Se0.82 epilayer on GaAs. Chinese Journal of Physics, 36(3), 533-541.
Chen, H. J. ; Lin, Der-Yuh ; Huang, Y. S. ; Tu, R. C. ; Su, Y. K. ; Tiong, K. K. / Optical characterization of a Zn0.88Mg0.12S0.18Se0.82 epilayer on GaAs. In: Chinese Journal of Physics. 1998 ; Vol. 36, No. 3. pp. 533-541.
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Chen, HJ, Lin, D-Y, Huang, YS, Tu, RC, Su, YK & Tiong, KK 1998, 'Optical characterization of a Zn0.88Mg0.12S0.18Se0.82 epilayer on GaAs', Chinese Journal of Physics, vol. 36, no. 3, pp. 533-541.

Optical characterization of a Zn0.88Mg0.12S0.18Se0.82 epilayer on GaAs. / Chen, H. J.; Lin, Der-Yuh; Huang, Y. S.; Tu, R. C.; Su, Y. K.; Tiong, K. K.

In: Chinese Journal of Physics, Vol. 36, No. 3, 01.12.1998, p. 533-541.

Research output: Contribution to journalArticle

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AU - Chen, H. J.

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AB - We have performed the photoluminescence, piezoreflectance and contactless electroreflectance study of a Zn0.88Mg0.12S0.18Se0.82 film, grown by molecular beam epitaxy on a (001) GaAs substrate, near the band edge in the temperature range between 15 and 300 K. The features related to the band-to-band excitonic and defect-related transitions of the material are observed and the nature of these features are discussed. In addition, the parameters that describe the temperature dependence of the interband transition energy and broadening function of the excitonic feature are evaluated.

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Chen HJ, Lin D-Y, Huang YS, Tu RC, Su YK, Tiong KK. Optical characterization of a Zn0.88Mg0.12S0.18Se0.82 epilayer on GaAs. Chinese Journal of Physics. 1998 Dec 1;36(3):533-541.