Optical characterization and photovoltaic performance evaluation of GaAs p-i-n solar cells with various metal grid spacings

Jenq Shinn Wu, Der Yuh Lin, Yun Guang Li, Hung Pin Hsu, Ming Cheng Kao, Hone Zern Chen

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2 Citations (Scopus)


GaAs p-i-n solar cells are studied using electroreflectance (ER) spectroscopy, light beam induced current (LBIC) mapping and photovoltaic characterization. Using ER measurements, the electric field across the pn junction of a wafer can be evaluated, showing 167 kV/cm and 275 kV/cm in the built-in condition and at −3 V reverse bias, respectively. In order to understand the effect of the interval between metal grids on the device’s solar performance, we performed LBIC mapping and solar illumination on samples of different grid spacings. We found that the integrated photocurrent intensity of LBIC mapping shows a consistent trend with the solar performance of the devices with various metal grid spacings. For the wafer used in this study, the optimal grid spacing was found to be around 300 µm. Our results clearly show the importance of the metal grid pattern in achieving high-efficiency solar cells.

Original languageEnglish
Article number170
Issue number3
Publication statusPublished - 2019 Mar


All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Inorganic Chemistry

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