GaN films were deposited on wet-etched GaN templates having various etch pit sizes. Improved optical characteristics of the overgrown GaN films were observed including a remarkable increment in photoluminescence (PL) intensity and a considerable reduction in emission linewidth of the near bandedge (BE) emission. Improvement of the optical property of an overgrown GaN film is attributed to a selective elimination of threading dislocations (TDs) which results in a reduction of etching pit density (EPD) count of the overgrown GaN film.
|Number of pages||2|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||4 A|
|Publication status||Published - 2005 Apr 1|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)