Abstract
GaN films were deposited on wet-etched GaN templates having various etch pit sizes. Improved optical characteristics of the overgrown GaN films were observed including a remarkable increment in photoluminescence (PL) intensity and a considerable reduction in emission linewidth of the near bandedge (BE) emission. Improvement of the optical property of an overgrown GaN film is attributed to a selective elimination of threading dislocations (TDs) which results in a reduction of etching pit density (EPD) count of the overgrown GaN film.
Original language | English |
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Pages (from-to) | 1732-1733 |
Number of pages | 2 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 44 |
Issue number | 4 A |
DOIs | |
Publication status | Published - 2005 Apr 1 |
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)