Optical characteristics of GaN films overgrown on wet-etched GaN templates

Yu Li Tsai, Jyh Rong Gong, Kun Ming Lin, Der Yuh Lin, Edwin Chinhong Chen

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Abstract

GaN films were deposited on wet-etched GaN templates having various etch pit sizes. Improved optical characteristics of the overgrown GaN films were observed including a remarkable increment in photoluminescence (PL) intensity and a considerable reduction in emission linewidth of the near bandedge (BE) emission. Improvement of the optical property of an overgrown GaN film is attributed to a selective elimination of threading dislocations (TDs) which results in a reduction of etching pit density (EPD) count of the overgrown GaN film.

Original languageEnglish
Pages (from-to)1732-1733
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number4 A
DOIs
Publication statusPublished - 2005 Apr 1

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All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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