Optical characteristics of GaN films overgrown on wet-etched GaN templates

Yu Li Tsai, Jyh Rong Gong, Kun Ming Lin, Der Yuh Lin, Edwin Chinhong Chen

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

GaN films were deposited on wet-etched GaN templates having various etch pit sizes. Improved optical characteristics of the overgrown GaN films were observed including a remarkable increment in photoluminescence (PL) intensity and a considerable reduction in emission linewidth of the near bandedge (BE) emission. Improvement of the optical property of an overgrown GaN film is attributed to a selective elimination of threading dislocations (TDs) which results in a reduction of etching pit density (EPD) count of the overgrown GaN film.

Original languageEnglish
Pages (from-to)1732-1733
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number4 A
DOIs
Publication statusPublished - 2005 Apr 1

Fingerprint

templates
Linewidth
elimination
Etching
Photoluminescence
Optical properties
etching
photoluminescence
optical properties

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

@article{47e07d8ac0cb4a07873a885bf562ccf8,
title = "Optical characteristics of GaN films overgrown on wet-etched GaN templates",
abstract = "GaN films were deposited on wet-etched GaN templates having various etch pit sizes. Improved optical characteristics of the overgrown GaN films were observed including a remarkable increment in photoluminescence (PL) intensity and a considerable reduction in emission linewidth of the near bandedge (BE) emission. Improvement of the optical property of an overgrown GaN film is attributed to a selective elimination of threading dislocations (TDs) which results in a reduction of etching pit density (EPD) count of the overgrown GaN film.",
author = "Tsai, {Yu Li} and Gong, {Jyh Rong} and Lin, {Kun Ming} and Lin, {Der Yuh} and Chen, {Edwin Chinhong}",
year = "2005",
month = "4",
day = "1",
doi = "10.1143/JJAP.44.1732",
language = "English",
volume = "44",
pages = "1732--1733",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "4 A",

}

Optical characteristics of GaN films overgrown on wet-etched GaN templates. / Tsai, Yu Li; Gong, Jyh Rong; Lin, Kun Ming; Lin, Der Yuh; Chen, Edwin Chinhong.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 44, No. 4 A, 01.04.2005, p. 1732-1733.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Optical characteristics of GaN films overgrown on wet-etched GaN templates

AU - Tsai, Yu Li

AU - Gong, Jyh Rong

AU - Lin, Kun Ming

AU - Lin, Der Yuh

AU - Chen, Edwin Chinhong

PY - 2005/4/1

Y1 - 2005/4/1

N2 - GaN films were deposited on wet-etched GaN templates having various etch pit sizes. Improved optical characteristics of the overgrown GaN films were observed including a remarkable increment in photoluminescence (PL) intensity and a considerable reduction in emission linewidth of the near bandedge (BE) emission. Improvement of the optical property of an overgrown GaN film is attributed to a selective elimination of threading dislocations (TDs) which results in a reduction of etching pit density (EPD) count of the overgrown GaN film.

AB - GaN films were deposited on wet-etched GaN templates having various etch pit sizes. Improved optical characteristics of the overgrown GaN films were observed including a remarkable increment in photoluminescence (PL) intensity and a considerable reduction in emission linewidth of the near bandedge (BE) emission. Improvement of the optical property of an overgrown GaN film is attributed to a selective elimination of threading dislocations (TDs) which results in a reduction of etching pit density (EPD) count of the overgrown GaN film.

UR - http://www.scopus.com/inward/record.url?scp=21244452356&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=21244452356&partnerID=8YFLogxK

U2 - 10.1143/JJAP.44.1732

DO - 10.1143/JJAP.44.1732

M3 - Article

AN - SCOPUS:21244452356

VL - 44

SP - 1732

EP - 1733

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 4 A

ER -