Abstract
GaN films were deposited on wet-etched GaN templates having various etch pit sizes. Improved optical characteristics of the overgrown GaN films were observed including a remarkable increment in photoluminescence (PL) intensity and a considerable reduction in emission linewidth of the near bandedge (BE) emission. Improvement of the optical property of an overgrown GaN film is attributed to a selective elimination of threading dislocations (TDs) which results in a reduction of etching pit density (EPD) count of the overgrown GaN film.
| Original language | English |
|---|---|
| Pages (from-to) | 1732-1733 |
| Number of pages | 2 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 44 |
| Issue number | 4 A |
| DOIs | |
| Publication status | Published - 2005 Apr 1 |
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
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Tsai, Y. L., Gong, J. R., Lin, K. M., Lin, D. Y., & Chen, E. C. (2005). Optical characteristics of GaN films overgrown on wet-etched GaN templates. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 44(4 A), 1732-1733. https://doi.org/10.1143/JJAP.44.1732