Abstract
GaN films were deposited on wet-etched GaN templates having various etch pit sizes. Improved optical characteristics of the overgrown GaN films were observed including a remarkable increment in photoluminescence (PL) intensity and a considerable reduction in emission linewidth of the near bandedge (BE) emission. Improvement of the optical property of an overgrown GaN film is attributed to a selective elimination of threading dislocations (TDs) which results in a reduction of etching pit density (EPD) count of the overgrown GaN film.
| Original language | English |
|---|---|
| Pages (from-to) | 1732-1733 |
| Number of pages | 2 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 44 |
| Issue number | 4 A |
| DOIs | |
| Publication status | Published - 2005 Apr 1 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
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Optical characteristics of GaN films overgrown on wet-etched GaN templates. / Tsai, Yu Li; Gong, Jyh Rong; Lin, Kun Ming; Lin, Der Yuh; Chen, Edwin Chinhong.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 44, No. 4 A, 01.04.2005, p. 1732-1733.Research output: Contribution to journal › Article
TY - JOUR
T1 - Optical characteristics of GaN films overgrown on wet-etched GaN templates
AU - Tsai, Yu Li
AU - Gong, Jyh Rong
AU - Lin, Kun Ming
AU - Lin, Der Yuh
AU - Chen, Edwin Chinhong
PY - 2005/4/1
Y1 - 2005/4/1
N2 - GaN films were deposited on wet-etched GaN templates having various etch pit sizes. Improved optical characteristics of the overgrown GaN films were observed including a remarkable increment in photoluminescence (PL) intensity and a considerable reduction in emission linewidth of the near bandedge (BE) emission. Improvement of the optical property of an overgrown GaN film is attributed to a selective elimination of threading dislocations (TDs) which results in a reduction of etching pit density (EPD) count of the overgrown GaN film.
AB - GaN films were deposited on wet-etched GaN templates having various etch pit sizes. Improved optical characteristics of the overgrown GaN films were observed including a remarkable increment in photoluminescence (PL) intensity and a considerable reduction in emission linewidth of the near bandedge (BE) emission. Improvement of the optical property of an overgrown GaN film is attributed to a selective elimination of threading dislocations (TDs) which results in a reduction of etching pit density (EPD) count of the overgrown GaN film.
UR - http://www.scopus.com/inward/record.url?scp=21244452356&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=21244452356&partnerID=8YFLogxK
U2 - 10.1143/JJAP.44.1732
DO - 10.1143/JJAP.44.1732
M3 - Article
AN - SCOPUS:21244452356
VL - 44
SP - 1732
EP - 1733
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4 A
ER -