Optical characteristics of GaN films overgrown on wet-etched GaN templates

Yu Li Tsai; Jyh Rong Gong; Kun Ming Lin; Der Yuh Lin; Edwin Chinhong Chen

doi:10.1143/JJAP.44.1732

Optical characteristics of GaN films overgrown on wet-etched GaN templates

Yu Li Tsai, Jyh Rong Gong, Kun Ming Lin, Der Yuh Lin, Edwin Chinhong Chen

Department of Electronic Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

GaN films were deposited on wet-etched GaN templates having various etch pit sizes. Improved optical characteristics of the overgrown GaN films were observed including a remarkable increment in photoluminescence (PL) intensity and a considerable reduction in emission linewidth of the near bandedge (BE) emission. Improvement of the optical property of an overgrown GaN film is attributed to a selective elimination of threading dislocations (TDs) which results in a reduction of etching pit density (EPD) count of the overgrown GaN film.

Original language	English
Pages (from-to)	1732-1733
Number of pages	2
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	44
Issue number	4 A
DOIs	https://doi.org/10.1143/JJAP.44.1732
Publication status	Published - 2005 Apr 1

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.44.1732

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title = "Optical characteristics of GaN films overgrown on wet-etched GaN templates",

abstract = "GaN films were deposited on wet-etched GaN templates having various etch pit sizes. Improved optical characteristics of the overgrown GaN films were observed including a remarkable increment in photoluminescence (PL) intensity and a considerable reduction in emission linewidth of the near bandedge (BE) emission. Improvement of the optical property of an overgrown GaN film is attributed to a selective elimination of threading dislocations (TDs) which results in a reduction of etching pit density (EPD) count of the overgrown GaN film.",

author = "Tsai, {Yu Li} and Gong, {Jyh Rong} and Lin, {Kun Ming} and Lin, {Der Yuh} and Chen, {Edwin Chinhong}",

year = "2005",

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language = "English",

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T1 - Optical characteristics of GaN films overgrown on wet-etched GaN templates

AU - Tsai, Yu Li

AU - Gong, Jyh Rong

AU - Lin, Kun Ming

AU - Lin, Der Yuh

AU - Chen, Edwin Chinhong

PY - 2005/4/1

Y1 - 2005/4/1

N2 - GaN films were deposited on wet-etched GaN templates having various etch pit sizes. Improved optical characteristics of the overgrown GaN films were observed including a remarkable increment in photoluminescence (PL) intensity and a considerable reduction in emission linewidth of the near bandedge (BE) emission. Improvement of the optical property of an overgrown GaN film is attributed to a selective elimination of threading dislocations (TDs) which results in a reduction of etching pit density (EPD) count of the overgrown GaN film.

AB - GaN films were deposited on wet-etched GaN templates having various etch pit sizes. Improved optical characteristics of the overgrown GaN films were observed including a remarkable increment in photoluminescence (PL) intensity and a considerable reduction in emission linewidth of the near bandedge (BE) emission. Improvement of the optical property of an overgrown GaN film is attributed to a selective elimination of threading dislocations (TDs) which results in a reduction of etching pit density (EPD) count of the overgrown GaN film.

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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